SL 0380 R
Abstract: MHW1172 3TB12 MHW1221 MHW1171-MHW1172 MHW1171 MHW1222 motorola mhw NP-80
Text: I The LOW DISTQRT!ON . designed distortion amplifier. Idilme WI DEBNJD AMPLIFIER for broadband Specified applications for Features all gold metal lization @ Broadband ~ specifically characteristics. I&F MHz Typ MHW 1171 MHW1172 22.OdB (Typ) MHW 1221 MHW1222
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MHW1172
MHW1222
MHW1171
MHW1221
SL 0380 R
MHW1172
3TB12
MHW1221
MHW1171-MHW1172
MHW1171
MHW1222
motorola mhw
NP-80
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s585
Abstract: 24 t0 5 MHW3181 MHW3182 sil40 sil 4508 Motorola 1981
Text: MHW3181 MHW3182 I I ‘TIM?RF Line LOW DISTORTION WI DEBAND AMPLIFIER MODULE I designed characteristics. Features for broadband Specifically ion-implanted applications intended arsenic and an all gold metal lization requiring TRi&di@4$MPLlF1ER low-distortion
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MHW3181
MHW3182
35-Channel
s585
24 t0 5
MHW3181
MHW3182
sil40
sil 4508
Motorola 1981
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HP8542
Abstract: MRF587
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilicon H igh-Frequency Transistor MRF587 . . . designed for use in hlgh-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. •
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MRF587
MRF587
CT050
HP8542
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CATV MHW
Abstract: MHW1172 MHW1171 MHW1221-MHW1222 MHW 254 MHW1222 motorola mhw CASE 714 MHW1221 XMD21
Text: y?D ie î I MHW1171 MHW1172 MHW1221 MHW1222 r p f MOTOROLA k f j T h e IIP ' L in e CA TV IN PUT/O UTPUT T R U N K AM PLIFIER S LOW D ISTO R TIO N W IDEBAND A M P L IFIE R MODULE . . . designed s p e c ific a lly fo r b ro a d b a n d a p p lic a tio n s re q u irin g lo w
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MHW1171
MHW1172
MHW1221
MHW1172
MHW1222
RF-59
CATV MHW
MHW1221-MHW1222
MHW 254
motorola mhw
CASE 714
XMD21
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high-gain, iow-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure —
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CT050
MRFS87
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ATIC 59 C1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF587 . . . designed for use in high—gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587/D
MRF587
ATIC 59 C1
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF587 The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MÄTV, and instrumentation applications. •
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OCR Scan
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PDF
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MRF587
CT050
45004B
MRF587
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