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    XDS TRANSISTOR Search Results

    XDS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    XDS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    xds pnp

    Abstract: No abstract text available
    Text: BCR555 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR555 XDs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR555 VPS05161 EHA07183 xds pnp

    xds pnp

    Abstract: lp62256e BCR555 VPS05161
    Text: BCR555 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR555 XDs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR555 VPS05161 EHA07183 Jul-23-2001 xds pnp lp62256e BCR555 VPS05161

    Untitled

    Abstract: No abstract text available
    Text: BCR555 PNP Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 2.2kΩ, R2= 10kΩ 1 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings


    Original     		PDF BCR555 EHA07183

    PIN CONFIGURATION IC 555

    Abstract: C2383 transistor c2383 IC 555 Q62702-C2383 c2383 transistor xds pnp datasheet of ic 555 transistor c2383 0 BR C2383
    Text: BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 2.2kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2383 OT-23 Nov-27-1996 PIN CONFIGURATION IC 555 C2383 transistor c2383 IC 555 Q62702-C2383 c2383 transistor xds pnp datasheet of ic 555 transistor c2383 0 BR C2383

    BCR555

    Abstract: marking XDS sot23 bcr555 equivalent lp62256e BCW66
    Text: BCR555 PNP Silicon Digital Transistor • Built in bias resistor R1= 2.2 kΩ, R2 = 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package


    Original     		PDF BCR555 EHA07183 BCR555 marking XDS sot23 bcr555 equivalent lp62256e BCW66

    Untitled

    Abstract: No abstract text available
    Text: BCR555 PNP Silicon Digital Transistor • Built in bias resistor R1= 2.2 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23


    Original     		PDF BCR555 EHA07183

    Untitled

    Abstract: No abstract text available
    Text: BCR555 PNP Silicon Digital Transistor • Built in bias resistor R1= 2.2 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23


    Original     		PDF BCR555 EHA07183

    Untitled

    Abstract: No abstract text available
    Text: BCR555 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR555 XDs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR555 VPS05161 EHA07183

    PIN CONFIGURATION IC 555

    Abstract: IC 555 Ic digital 555 xds pnp 14 pin ic 555
    Text: BCR 555 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 555 XDs Pin Configuration 1=B 2=E Package


    Original     		PDF VPS05161 EHA07183 OT-23 Oct-19-1999 PIN CONFIGURATION IC 555 IC 555 Ic digital 555 xds pnp 14 pin ic 555

    EH 14 A

    Abstract: No abstract text available
    Text: BCR555 PNP Silicon Digital Transistor • Built in bias resistor R1= 2.2 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23


    Original     		PDF BCR555 EHA07183 EH 14 A

    Untitled

    Abstract: No abstract text available
    Text: BCR555 PNP Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 2.2 kΩ, R 2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings


    Original     		PDF BCR555 EHA07183

    Untitled

    Abstract: No abstract text available
    Text: BSD314SPE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) -1.5 ID A • ESD protected PG-SOT-363 • Qualified according AEC Q101


    Original     		PDF BSD314SPE PG-SOT-363 IEC61249-2-21 PG-SOT-363 L6327: -200A/Â JESD22-A114

    p403

    Abstract: BMA250 integrated circuit BOSCH C_100N_0402_X5R_K_10
    Text: User’s Guide SWRU321A – May 2013 SmartRF06 Evaluation Board User’s Guide SmartRF is a trademark of Texas Instruments User’s Guide SWRU321A – May 2013 Table of Contents 4.1 4.1.1 4.1.2 5.1 6.1 6.1.1 6.2 6.2.1 6.2.2 6.2.3 6.3 6.3.1 6.3.2 6.3.3 6.4


    Original     		PDF SWRU321A SmartRF06 p403 BMA250 integrated circuit BOSCH C_100N_0402_X5R_K_10

    fg wilson generator

    Abstract: mn1880 bc511 MN187 BC513 BC515 MN1860 BC510 BC512 BC514
    Text: MICROCOMPUTER MN101D00 MN101D02D/02E/02F/ 02G/02H LSI User’s Manual Pub.No.21502-020E PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names,logotype and product names written in this book are trademarks or registered trademarks of their


    Original     		PDF MN101D00 MN101D02D/02E/02F/ 02G/02H 21502-020E A-107, fg wilson generator mn1880 bc511 MN187 BC513 BC515 MN1860 BC510 BC512 BC514

    BSD314SPE

    Abstract: JESD22-A114 L6327
    Text: BSD314SPE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-363 • Qualified according AEC Q101


    Original     		PDF BSD314SPE PG-SOT-363 L6327: BSD314SPE JESD22-A114 L6327

    M15098

    Abstract: No abstract text available
    Text: BSD314SPE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-363 • Qualified according AEC Q101


    Original     		PDF BSD314SPE PG-SOT-363 IEC61249-2-21 PG-SOT-363 L6327: M15098

    Untitled

    Abstract: No abstract text available
    Text: BSD314SPE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-363 • Qualified according AEC Q101


    Original     		PDF BSD314SPE PG-SOT-363 IEC61249-2-21 PG-SOT-363 L6327:

    LC863532C

    Abstract: LC8633xx LC87F5cC8A DATA VISION LCD MODULE p34 LC863432C lc877b80a LC863524C LC709004A LC87F7bC8A DATASHEET LC863532C
    Text: Microcontrollers 2008-6 Latest Information on SANYO Microcontrollers SANYO Microcontrollers - Expanding Human Potential The SANYO Semiconductor homepage features the latest information on SANYO microcontrollers to increase customer awareness of our products and ensure that they are


    Original     		PDF 24-bit MFP24S 300mil) EP40T LC863532C LC8633xx LC87F5cC8A DATA VISION LCD MODULE p34 LC863432C lc877b80a LC863524C LC709004A LC87F7bC8A DATASHEET LC863532C

    alternator regulator protocol BSS

    Abstract: transistor 30028 transistor fcs 9012 Marconi 2030 service manual
    Text: Power of Choice Programmable Power Supplies & Electronic Loads Catalog Headquartered in San Diego, California, AMETEK Programmable Power is the global leader in the design and manufacture of precision, programmable power supplies and electronic loads for R&D, ATE,


    Original     		PDF

    xds pnp

    Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
    Text: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23


    OCR Scan     		PDF 10kii) Q62702-C2383 OT-23 xds pnp Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 555 PNP Silicon Digital Transistor •Switching circuit, inverter, interface circuit, driver circuit >Built in resistor R-| = 2.2kÎ2, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 555 XDs Q62702-C2383 1=B Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2383 OT-23 10-21--------------LI------------ BH35bOS fl235b05 015CH01

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistors BUZ 210 BUZ 211 Type </> • N channel • Enhancement mode • FREDFET h BUZ 210 500 V 10.5 A ^DS on 0.6 n BUZ 211 500 V 9.0 A 0.8 Q Package1) Ordering Code TO-204 AA C67078-A1102-A2 TO-204 AA C67078-A1100-A2 Maximum Ratings


    OCR Scan     		PDF O-204 C67078-A1102-A2 C67078-A1100-A2 fi235b05 0E35bG5

    68HC000

    Abstract: TLCS-68000 TMP68HC003 TMP68HC003DF-12 A23C D15C HC-003 6800-type
    Text: T O S H IB A TMP68HC003 Part 6 T M P 6 8 H C 003 D F -12 T M P 6 8 H C 0 0 0 A SSP w ith P o w e r-D o w n Function Chapter 1 Outline Designed around the TMP68HC000 core, TMP68HC003 is equipped with a clock generator and power­ down function for low power consumption applications.


    OCR Scan     		PDF TMP68HC003 TMP68HC003DF-12 TMP68HC000ASSP TMP68HC000 TMP68HC003 TMP68HC003F; TMP68HC003F. HC003-10 68HC000 TLCS-68000 TMP68HC003DF-12 A23C D15C HC-003 6800-type

    2SK150

    Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065
    Text: 2 5 ,1 1 5 ' tJ n y n * v % i \ > m 8 i e w i m m ^ y v z & SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 2 5 ,1 2 - i 2 S K 15 ii it x o is « « « « * o 1 O D C , A C S S A * S !ttlE l« iffl O O ^ O X -1 7 f- •/


    OCR Scan     		PDF 2SK15) 2SK11) 2SK12, 3800iiu 3800/tU 2SK12 3SK15 2SK12) 10kfl) 2SK150 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065