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    X28C010D-15

    Abstract: FN8105 GDIP1-T32 x28c010dmb-20 X28C010 X28C010D-12 X28C010DI X28C010DI-12 X28HT010 F326
    Text: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the


    Original     		PDF X28C010, X28HT010 X28C010/X28HT010 FN8105 120ns 256-bion X28C010D-15 GDIP1-T32 x28c010dmb-20 X28C010 X28C010D-12 X28C010DI X28C010DI-12 X28HT010 F326

    X28C010

    Abstract: 37KW X28C010-20 X28C010-25 X28C010I X28C010M
    Text: X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Timed • No Erase Before Write • No Complex Programming Algorithms


    Original     		PDF X28C010 120ns X28C010 37KW X28C010-20 X28C010-25 X28C010I X28C010M

    GDIP1-T32

    Abstract: F3262 INTERSIL LCC-32 12c772 F326
    Text: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the


    Original     		PDF X28C010, X28HT010 FN8105 X28C010/X28HT010 256-byte X28HT010 GDIP1-T32 F3262 INTERSIL LCC-32 12c772 F326

    X28C0101

    Abstract: FN8105 x28c010dmb-20 X28C010 X28C010D X28C010D-12 X28C010D-15 X28C010DI X28C010DI-12 X28C010DI-15
    Text: X28C010 Data Sheet May 11, 2005 FN8105.0 5 Volt, Byte Alterable EEPROM Features The Intersil X28C010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C010 is a 5V only device. The


    Original     		PDF X28C010 FN8105 X28C010 120ns 256-byte X28C0101 x28c010dmb-20 X28C010D X28C010D-12 X28C010D-15 X28C010DI X28C010DI-12 X28C010DI-15

    Untitled

    Abstract: No abstract text available
    Text: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the


    Original     		PDF X28C010, X28HT010 X28C010/X28HT010 FN8105 120ns

    TMS27256

    Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
    Text: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64


    Original     		PDF 2716BDC Am27C64 Am2864AE Am2864BE Am27C128 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 TMS27256 M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32

    X28C010

    Abstract: X28C010-20 X28C010-25 X28C010I X28C010M XICOR X28C010 a8a16
    Text: X28C010 X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X28C010 is a 128K x 8 E2PROM, fabricated with Xicor's proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C010 is a 5V only device. The


    Original     		PDF X28C010 X28C010 X28C010-20 X28C010-25 X28C010I X28C010M XICOR X28C010 a8a16

    64 CERAMIC LEADLESS CHIP CARRIER LCC

    Abstract: T05 Package transistor T04 X28C010 X28C010-20 X28C010-25 X28C010I X28C010M XICOR X28C010
    Text: X28C010 X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X28C010 is a 128K x 8 E2PROM, fabricated with Xicor's proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C010 is a 5V only device. The


    Original     		PDF X28C010 X28C010 9-A-0013 64 CERAMIC LEADLESS CHIP CARRIER LCC T05 Package transistor T04 X28C010-20 X28C010-25 X28C010I X28C010M XICOR X28C010

    x2864

    Abstract: x28001 X28C010C x28c64
    Text: ADVANCED INFORMATION 1M X28C010M Military 128K x 8 Bit Electrically Erasable PROM FEATURES • Low Power CMOS —50 mA Active Current Max. —£¡00 ¡xA Standby Current Max. • High Speed Page Write Operation • Fast Write Cycle Times — 2156-Byte Page Size


    OCR Scan     		PDF X28C010M 2156-Byte X28C010 X28C010M 32-LEAD x2864 x28001 X28C010C x28c64

    lk 3058

    Abstract: No abstract text available
    Text: i m X28C010 1M 128K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages o r VPP Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithm s


    OCR Scan     		PDF X28C010 120ns lk 3058