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    TMS27256

    Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
    Text: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64


    Original     		PDF 2716BDC Am27C64 Am2864AE Am2864BE Am27C128 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 TMS27256 M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32

    X2864B

    Abstract: x2864BM
    Text: PR ELIM INA R Y IN FO RM A TIO N 64K Military X2864BM 8 1 9 2 x 8 Bit _ Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Perform ance Scaled NMOS Technology • Fast W rite Cycle Times — 32-Byte Page W rite Operation


    OCR Scan     		PDF X2864BM 32-Byte X2864B x2864BM

    X2864BDMB

    Abstract: X2864B x2864bdm x2864bemb x2864bd x2864BM X2864BDM-15
    Text: im Military 64K X2864BM 8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Performance Scaled NMOS Technology • Fa»t Write Cycle Times —32-Byte Page Write Operation —Eiyte or Page Write Cycle: 3 ms Typical —Complete Memory Rewrite: 750 ms


    OCR Scan     		PDF X2864BM 8192x8 --32-Byte X2864B X2864BM 32-PAD X2864BDMB x2864bdm x2864bemb x2864bd X2864BDM-15