d1308
Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.
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2SK2411,
2SK2411-Z
2SK2411
d1308
d1297
D12971E
2SK2411-Z
C10535E
C11531E
MP-25
MP-25Z
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC R18
Abstract: C10535E PC337 IEI-1212 C10535E NEC IC PACKAGE MANUAL MARKING G 3pin C11531E MEI-1202 MP-45G nec 2405 regulator
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC337 3-TERMINAL NEGATIVE ADJUSTABLE REGULATOR The µPC337 is an adjustable 3-terminal negative voltage regulator, which has 1.5 A capable for the output current. The output voltage can be set any value between –1.3 V and –30 V by two external resistors.
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PC337
PC337
PC337HF
MP-45G)
O-220)
NEC R18
C10535E
IEI-1212
C10535E NEC IC PACKAGE MANUAL
MARKING G 3pin
C11531E
MEI-1202
MP-45G
nec 2405 regulator
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NX8501
Abstract: NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501CC 25TC
Text: DATA SHEET LASER DIODE NX8501 Series 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation
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NX8501
TA-NWT-000983
NX8501AC
NX8501AC-BA
NX8501AC-CA
NX8501BC
NX8501CC
25TC
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nec laser diode OTDR
Abstract: NDL7103 NDL7113 NDL7515P NDL7515P1 NDL7515P1C NDL7515PC NDL7552P NDL7563
Text: DATA SHEET LASER DIODE NDL7515P Series InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NDL7515P Series is a 1 310 nm newly developed Multiple Quantum Well MQW structure pulsed laser diode module with single mode fiber. It is designed for light source of optical measurement equipment (OTDR).
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NDL7515P
NDL7515P
SM-9/125
NDL7515P1
nec laser diode OTDR
NDL7103
NDL7113
NDL7515P1
NDL7515P1C
NDL7515PC
NDL7552P
NDL7563
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NDL5422P
Abstract: NDL5471R NDL5471RC NDL5471RD
Text: DATA SHEET PHOTO DIODE NDL5471R Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ120 µm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE DESCRIPTION The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long
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NDL5471R
NDL5471RC
NDL5471RD
NDL5422P
NDL5471RC
NDL5471RD
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MEI-1202
Abstract: PA606T PA607T C10535E
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA606T N-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING The µPA606T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET elements. It achieves high-density mounting 0.32 +0.1 –0.05
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PA606T
PA606T
SC-59
PA607T
MEI-1202
PA607T
C10535E
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C10535E NEC IC PACKAGE MANUAL
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C10535E
Abstract: C10943X MEI-1202 PA1710 G1088
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2157
Abstract: C10535E MEI-1202
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d1063
Abstract: 2sb1658 C10535E C10943X MEI-1202
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C10535E
Abstract: C10943X MEI-1202 PA1702 TEA-1035
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d1308
Abstract: D1297 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D1062
Abstract: 2SB1657 C10535E C10943X MEI-1202
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C10535E
Abstract: C10943X MEI-1202 PA1752 TEA-1035
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2158
Abstract: C10535E MEI-1202
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SJ356
Abstract: C10535E MEI-1202
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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uPC177
Abstract: uPC458 uPC844 uPC1094 9020 8-pin SOP pc494 uPC824 uPC454 uPC802 uPC451
Text: General Purpose Linear IC Operational Amplifier Part number Function*1 Communication/industry General use Single Dual Quad use µPC151 µPC741 µPC251 µPC1458 µPC354 Recommended power supply voltage*2 V ±7.5 to ±16 V–+2 to V+–0.5 ±3 to ±16 µPC454
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PC151
PC741
PC251
PC1458
PC354
PC454
PC815
PC816
X10679EJCV0SG00
1996P
uPC177
uPC458
uPC844
uPC1094
9020 8-pin SOP
pc494
uPC824
uPC454
uPC802
uPC451
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D1062
Abstract: 2SD2583 C10535E C10943X MEI-1202
Text: DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) Collector to Base Voltage Collector to Emitter Volteage VCB0 VCE0 30 V 30 V
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2SD2583
D1062
2SD2583
C10535E
C10943X
MEI-1202
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX8330RA 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE MINI-DIL PIGTAILED MODULE FOR 2.5 Gb/s DESCRIPTION T he N X 8 33 0R A is a 1 310 nm A /4-p hase -shifted D FB D istributed F eed -B ack la ser d io d e m ini dual in -lin e (DIL)
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NX8330RA
NX8563LB
NDL7910P
C11159E
C11531E
C10535E
X10679E
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transistor BU 1037
Abstract: PA1572
Text: DATA SHEET Compound Field Effect Power Transistor _ / i P A 1 5 7 2 B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The /¿PA1572B is N -channel Power MOS FET Array in millimeters that built in 4 circuits designed for solenoid, motor and
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uPA1572B
uPA1572BH
transistor BU 1037
PA1572
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A1701
Abstract: nec 701 NEC 710
Text: DATA SHEET MOS Field Effect Power Transistors _ ¿¿PA1701 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIM ENSIONS This product is N-Channel MOS Field Effect Transistor in m illim eter designed for power managem ent applications of note
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uPA1701
A1701
nec 701
NEC 710
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transistor ba 752
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t
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