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    NDVVYX-0002 Amphenol Communications Solutions OSFP Visit Amphenol Communications Solutions
    SF Impression Pixel

    X0002 Price and Stock

    Hosonic Electronic Co Ltd E1SB55E0X0002E

    XTAL 2016 55.2MHZ, 10PF
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    DigiKey E1SB55E0X0002E Cut Tape 6,718 1
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    Hosonic Electronic Co Ltd E3SB14E0X0002E

    XTAL 3225 14.7456MHZ, 12PF
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    Arduino AKX00022

    ARDUINO ENGINEERING KIT REV.2
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    DigiKey AKX00022 Bulk 240 1
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    Arduino AKX00025

    STUDENT KIT EN
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    Arduino AKX00026

    OPLA IOT STARTER KIT
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    X0002 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TE28F640J3C-120

    Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


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    28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead TE28F640J3C-120 TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability PDF

    D8279

    Abstract: M30840MCT M3084
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    M32C/84 M32C/84, M32C/84T) 16/32-BIT D8279 M30840MCT M3084 PDF

    28F640J3

    Abstract: E28F640J3A-120 INTEL 28F320J3 TSOP 66 Package 28F128K3 28F256K3 TE28F640J3C-120 28F128J3 28F160S3 RC28F128J3C-150
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


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    28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead 28F640J3 E28F640J3A-120 INTEL 28F320J3 TSOP 66 Package 28F128K3 28F256K3 TE28F640J3C-120 28F128J3 28F160S3 RC28F128J3C-150 PDF

    Micron Q-Flash memory

    Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
    Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)


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    128Mb, MT28F128J3, MT28F640J3, MT28F320J3 56-Pin x8/x16 128KB 128Mb) Micron Q-Flash memory FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11 PDF

    21-pin* 4 digits

    Abstract: Applications Note U-96 program motor control with ccs software specification Note U-96 x0102 DRC3114 AM32C STPS 20
    Text: REJ09B0271-0100 M32C/80 Group 16/32 Hardware Manual RENESAS 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 SERIES Before using this material, please visit our website to verify that this is the most current document available. Rev. 1.00 Revision Date: Nov. 01, 2005


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    REJ09B0271-0100 M32C/80 16/32-BIT 21-pin* 4 digits Applications Note U-96 program motor control with ccs software specification Note U-96 x0102 DRC3114 AM32C STPS 20 PDF

    STR W 5453 A

    Abstract: STR W 5453 AX07CF192 AX07CF192-100 I6I15 ARM processor based Circuit Diagram splitter circuit
    Text: AX07CF192 32-Bit Embedded Flash MCU User’s Manual Preliminary Aeroflex Microelectronic Solutions 4350 Centennial Blvd. Colo. Spgs., CO 80907 www.aeroflex.com January, 2003 Aeroflex Microelectronic Solutions Sales Offices Main Office 4350 Centennial Blvd.


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    AX07CF192 32-Bit STR W 5453 A STR W 5453 AX07CF192 AX07CF192-100 I6I15 ARM processor based Circuit Diagram splitter circuit PDF

    tc 106-10

    Abstract: smd transistor w J 3 58 bts 425 l1 transistor SMD p02 smd diode p126 P56. smd 013A1 B15 diode smd diode DB 3 C F2N SMD
    Text: REJ09B0034-0131 16/32 M32C/83 Group M32C/83, M32C/83T Hardware Manual RENESAS 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 SERIES Before using this material, please visit our website to verify that this is the most current document available.


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    REJ09B0034-0131 M32C/83 M32C/83, M32C/83T) 16/32-BIT M32C/80 tc 106-10 smd transistor w J 3 58 bts 425 l1 transistor SMD p02 smd diode p126 P56. smd 013A1 B15 diode smd diode DB 3 C F2N SMD PDF

    Untitled

    Abstract: No abstract text available
    Text: LH28F008SC-T/SCH-T, LH28F008SC-TL/SCH-TL LH28F008SC-T/SCH-T LH28F008SC-TL/SCH-TL 8 M-bit 1 MB x 8 Smart 3 Flash Memories DESCRIPTION The LH28F008SC-T/SCH-T/SC-TL/SCH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a


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    LH28F008SC-T/SCH-T, LH28F008SC-TL/SCH-TL LH28F008SC-T/SCH-T LH28F008SC-T/SCH-T/SC-TL/SCH-TL downloaded435 TSOP040-P-1020) OP044-P-0600) 27TYP. FBGA048-P-0608) PDF

    SA612

    Abstract: LCC-40P-M02 MBM29LV002B
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20827-3E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29LV002T-10/-12/MBM29LV002B-10/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


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    DS05-20827-3E MBM29LV002T-10/-12/MBM29LV002B-10/-12 40-pin F9803 SA612 LCC-40P-M02 MBM29LV002B PDF

    28F008SA

    Abstract: E0000 LH28F008SCR-L85 LHF08CH2
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SCR-L85 Flash Memory 8M 1MB x 8 (Model No.: LHF08CH2) Spec No.: EL104029B Issue Date: February 1, 1999 sharp LHF08CH2 ●Handle this document carefully for it contains material protected by international


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    LH28F008SCR-L85 LHF08CH2) EL104029B LHF08CH2 28F008SA E0000 LH28F008SCR-L85 LHF08CH2 PDF

    28F008SA

    Abstract: LH28F016SCR-L95
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F016SCR-L95 Flash Memory 16M 2MB x 8 (Model No.: LHF16C18) Spec No.: EL104171 Issue Date: September 30, 1998 sharp LHF16C18 ●Handle this document carefully for it contains material protected by international


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    LH28F016SCR-L95 LHF16C18) EL104171 LHF16C18 28F008SA LH28F016SCR-L95 PDF

    E28F128

    Abstract: E28F640J3A Cross Reference 28F128J3A 28F160S3 28F320J3A 28F320J5 28F320S3 28F640J3A 28F640J5 320j3
    Text: 3 Volt Intel StrataFlash Memory 28F128J3A, 28F640J3A, 28F320J3A x8/x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ High-Density Symmetrically-Blocked Architecture — 128 128-Kbyte Erase Blocks (128 M) — 64 128-Kbyte Erase Blocks (64 M)


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    28F128J3A, 28F640J3A, 28F320J3A x8/x16) 128-Kbyte 128-bit 64-bit E28F128 E28F640J3A Cross Reference 28F128J3A 28F160S3 28F320J3A 28F320J5 28F320S3 28F640J3A 28F640J5 320j3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


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    F0306 PDF

    28F008SA

    Abstract: E0000 LH28F008SCN-L85
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SCN-L85 Flash Memory 8M 1MB x 8 (Model No.: LHF08CH9) Spec No.: EL10Z17 Issue Date: December 2, 1998 sharp LHF08CH9 ●Handle this document carefully for it contains material protected by international


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    LH28F008SCN-L85 LHF08CH9) EL10Z17 LHF08CH9 28F008SA E0000 LH28F008SCN-L85 PDF

    Intel StrataFlash Memory j3

    Abstract: 28F256J3 E28F640J3A-120 BGA 28F320J3 PC28F640J3 TE28F640J3C-115 vf bga INTEL 28F320J3 RC28F128J3C-150 PC28F128J3C120
    Text: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads


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    28F256J3, 28F128J3, 28F640J3, 28F320J3 x8/x16) 256Mbit 32-Byte 128-bit --64-bit Intel StrataFlash Memory j3 28F256J3 E28F640J3A-120 BGA 28F320J3 PC28F640J3 TE28F640J3C-115 vf bga INTEL 28F320J3 RC28F128J3C-150 PC28F128J3C120 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    phase controller L120

    Abstract: 1N914 28F008SA LH28F004SCB-L12 LHF04C10
    Text: SHARP LHF04C10 CONTENTS PA G E PA G E 1.0 IN TRO D U CTIO N . 3 5.0 D ESIG N C O N S ID E R A T IO N S . 23 1.1 New Features. 3


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    LHF04C10 LHF04C10 fbga048 AA2029 CSP48 0608TCMâ CV782 phase controller L120 1N914 28F008SA LH28F004SCB-L12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 Two 32-Byte Write Buffers — 2 \is per Byte Effective Programming Time Operating Voltage 5 V Vcc — — 5 V V pp 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit) High-Density Symmetrically-Blocked


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    28F160S5 28F320S5 x8/x16) 32-Byte 64-Kbyte 28F016SV 28F016SA AP-607 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT PREVIEW int ! VALUE SERIES 200 FLASH MEMORY CARD 8 - 6 4 MEGABYTES ¡MC008FLSG, ¡MC016FLSG, ¡MC024FLSG ¡MC032FLSG, ¡MC048FLSG, ¡MC064FLSG Low-Cost Linear Flash Card — Intel StrataFlash Memory Technology Automated Write and Erase Algorithms


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    MC008FLSG, MC016FLSG, MC024FLSG MC032FLSG, MC048FLSG, MC064FLSG AP-374 AP-644 AP-646 AP-647 PDF

    29058

    Abstract: No abstract text available
    Text: 3/5 VOLT SERIES 100 FLASH MEMORY MINIATURE CARD ÌFM002A, ÌFM004A, ÌFM008A • Low-Cost Linear Flash Card ■ Miniature Card Specification Compliant ■ Single Supply SmartVoltage Operation — 5 V or 3.3 V Read/Write ■ Fast Read Performance — 100 ns Max Access Time at 5 V


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    FM002A, FM004A, FM008A 28F008SC/28F016SC 28F004S3, 28F008S3, 29058 PDF

    "NOR Flash" intel 28f

    Abstract: 29060
    Text: PRELIMINARY intei 5 VOLT INTEL StrataFlash MEMORY 28F320J5 and 28F640J5 x8/x16 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set


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    28F320J5 28F640J5 x8/x16) 128-Kbyte 32-Byte 16-Mbit "NOR Flash" intel 28f 29060 PDF

    F1H16

    Abstract: 29060
    Text: PRODUCT PREVIEW INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 and 28F640J5 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set


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    28F320J5 28F640J5 128-Kbyte 32-Byte AP-374 AP-644 F1H16 29060 PDF

    block diagram automatic college bell

    Abstract: 29059 B686 AP-625
    Text: PRODUCT PREVIEW 28F016SC/28F016SC-L 16-MBIT 2 MB x 8 SmartVoltage FlashFile MEMORY SmartVoltage Technology — 2.7V Vcc (28F016SC-L Read-only) — 3.3V or 5V Vcc High-Density Symmetrically-Blocked Architecture — Thirty-two 64-Kbyte Erasable Blocks — 3.3V, 5V, o r1 2 V V p p


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    28F016SC/28F016SC-L 16-MBIT 28F016SC-L 64-Kbyte block diagram automatic college bell 29059 B686 AP-625 PDF

    5 PEN PC TECHNOLOGY free

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 a n d 28F640J5 High-Density Sym m etrically-Blocked A rchitecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Com patible Command Support


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    28F320J5 28F640J5 128-Kbyte 32-Byte AP-374 AP-644 5 PEN PC TECHNOLOGY free PDF