Untitled
Abstract: No abstract text available
Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output
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FMA219
FMA219
FMA219-000
FMA219-000SQ
FMA219-000S3
DS090509
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Untitled
Abstract: No abstract text available
Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output
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FMA219
FMA219
14dBm
FMA219-000
FMA219-000SQ
FMA219-000S3
DS121119
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X-band Gan Hemt
Abstract: x-band mmic lna TIC 1268 BiCmos 7400 FMA219-000SQ two bjt bc 107 A219 FMA219 MIL-HDBK-263 SiGe HBT GAIN BLOCK MMIC AMPLIFIER
Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output
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FMA219
FMA219
FMA219-000
FMA219-000SQ
FMA219-000S3
DS090509
X-band Gan Hemt
x-band mmic lna
TIC 1268
BiCmos 7400
FMA219-000SQ
two bjt bc 107
A219
MIL-HDBK-263
SiGe HBT GAIN BLOCK MMIC AMPLIFIER
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GAAS FET AMPLIFIER x-band 10w
Abstract: x-band mmic lna radar block diagram MMIC X-band amplifier diagram radar circuit x-band limiter LNA x-band Three MMIC Solution for an X-band RF Front End radar system with circuit diagram x-band mmic
Text: May 2006 A Three MMIC Solution for an X-band RF Front End by M/A-COM Introduction /A-COM has developed new MMICs for X-band radar applications that condense the RF front end into a set of only 3 MMICs. An equivalent set of single function MMICs might require 9 to 11 MMICs. Reducing
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10W0079-DIE
GAAS FET AMPLIFIER x-band 10w
x-band mmic lna
radar block diagram
MMIC X-band amplifier
diagram radar circuit
x-band limiter
LNA x-band
Three MMIC Solution for an X-band RF Front End
radar system with circuit diagram
x-band mmic
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Untitled
Abstract: No abstract text available
Text: NJG1800NB2 High Isolation X-SPDT DP4T SWITCH • GENERAL DESCRIPTION The NJG1800NB2 is a GaAs X (cross) – SPDT (DP4T) switch MMIC, which is designed for switching of balanced (differential) dual band filters. The switch IC features very low insertion loss and very high isolation for
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NJG1800NB2
NJG1800NB2
10-pin
EPCSP10-B2
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Untitled
Abstract: No abstract text available
Text: NJG1800NB2 High Isolation X-SPDT DP4T SWITCH • GENERAL DESCRIPTION The NJG1800NB2 is a GaAs X (cross) – SPDT (DP4T) switch MMIC, which is designed for switching of balanced (differential) dual band filters. The switch IC features very low insertion loss and very high isolation for
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NJG1800NB2
NJG1800NB2
10-pin
EPCSP10-B2
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x-band mmic core chip
Abstract: CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
Text: Product Feature T/R Module Solution for X-band Phasedarray Radar U nited Monolithic Semiconductors UMS has a considerable heritage in the design and production of MMIC solutions for space and defense programs. This extensive experience has been used to design
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com/28495-74
x-band mmic core chip
CHA7215
mmic core chip
CHA8100
wide band phase shifter
pulse compression radar
x-band mmic lna
CHA7115
radar system with circuit diagram
x-band accuracy
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UM 9515
Abstract: x-band mmic lna FMA219 LNA 9GHz Z 8607
Text: FMA219 Datasheet v3.0 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION:
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FMA219
FMA219
35-38g.
UM 9515
x-band mmic lna
LNA 9GHz
Z 8607
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UM 9515
Abstract: Filtronic
Text: FMA219 Datasheet v2.3 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION:
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FMA219
FMA219
MIL-STD-1686
MIL-HDBK-263.
UM 9515
Filtronic
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x-band mmic lna
Abstract: x-band mmic LNA x-band FMA219BF FMA219 MIL-HDBK-263 bc 408 equivalent LNA 9GHz
Text: PRELIMINARY • PERFORMANCE ♦ 7.0 – 11.0 GHz Operating Bandwidth ♦ 1.5 dB Noise Figure ♦ 21 dB Small-Signal Gain ♦ 12 dBm Output Power ♦ +3V Single Bias Supply ♦ DC De-coupled Input and Output Ports • DESCRIPTION AND APPLICATIONS FMA219 X-BAND LNA MMIC
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FMA219
FMA219
x-band mmic lna
x-band mmic
LNA x-band
FMA219BF
MIL-HDBK-263
bc 408 equivalent
LNA 9GHz
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X-band lna
Abstract: x-band mmic lna FMA219 LNA 9GHz
Text: PRELIMINARY • PERFORMANCE ♦ 7.0 – 11.0 GHz Operating Bandwidth ♦ 1.5 dB Noise Figure ♦ 21 dB Small-Signal Gain ♦ 12 dBm Output Power ♦ +3V Single Bias Supply ♦ DC De-coupled Input and Output Ports • DESCRIPTION AND APPLICATIONS FMA219 X-BAND LNA MMIC
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FMA219
FMA219
11GHz
X-band lna
x-band mmic lna
LNA 9GHz
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CAP 0402
Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm
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CMH0819
VQFN-24
CMH0819
CAP 0402
GaAs FET amplifer
mmic marking c8
GaAs FET amplifer chip
VQFN-24
MMIC marking code 132
MMIC marking code 101
mmic code marking P 18
mmic c8
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Infineon CMH192 GaAs
Abstract: CMH192 mmic MIXER 210
Text: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm
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CMH192
VQFN-20
CMH192
Infineon CMH192 GaAs
mmic MIXER 210
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PG311
Abstract: No abstract text available
Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm
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CMH192
Q62705-K608
VQFN-20
PG311
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MAALGM0002-DIE
Abstract: X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic
Text: RO-P-DS-3061 MAALGM0002-DIE X-Band Low Noise Amplifier 8.0-12.0 GHz Preliminary Information 8.0-12.0 GHz GaAs MMIC Amplifier Features ♦ ♦ ♦ ♦ 2.3 dB Noise Figure 8.0-12.0 GHz Operation Self-Aligned MSAG MESFET Process Variable Voltage Operation Vd = 3-5V
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RO-P-DS-3061
MAALGM0002-DIE
MAALGM0002-DIE
X-band low noise
N4 MMIC
x-band mmic lna
RO-P-DS-3061
MAALGM002-DIE
x-band mmic
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x-band limiter
Abstract: x-band mmic LNA x-band MMIC limiter band Limiter MA01503D
Text: RO-P-DS-3003 - - MA01503D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process
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RO-P-DS-3003
MA01503D
MA01503D
x-band limiter
x-band mmic
LNA x-band
MMIC limiter
band Limiter
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x-band limiter
Abstract: x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter MA01502D 6 ghz amplifier 10w
Text: RO-P-DS-3002 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process
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RO-P-DS-3002
MA01502D
MA01502D
x-band limiter
x-band mmic lna
LNA x-band
MMIC X-band amplifier
MMIC limiter
x-band mmic
band Limiter
6 ghz amplifier 10w
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x-band limiter
Abstract: x-band mmic band Limiter MA01503D LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
Text: V 1.00 MA01503D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications
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MA01503D
MA01503D
x-band limiter
x-band mmic
band Limiter
LNA x-band
MMIC limiter
mmic AMPLIFIER x-band 10w
LNA XBAND
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RO-P-DS-3061
Abstract: X-band lna x-band lna chip x-band mmic lna MMIC X-band amplifier MAALGM002-DIE
Text: RO-P-DS-3061 MAALGM0002-DIE X-Band Low Noise Amplifier 8.0-12.0 GHz Preliminary Information 8.0-12.0 GHz GaAs MMIC Amplifier Features ♦ ♦ ♦ ♦ 2.3 dB Noise Figure 8.0-12.0 GHz Operation Self-Aligned MSAG MESFET Process Variable Voltage Operation Vd = 3-5V
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RO-P-DS-3061
MAALGM0002-DIE
MAALGM0002-DIE
PAD1504I
BVA80UM
BVA80UM
RO-P-DS-3061
X-band lna
x-band lna chip
x-band mmic lna
MMIC X-band amplifier
MAALGM002-DIE
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x-band limiter
Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
Text: V 1.00 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features E E E E 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications
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MA01502D
MA01502D
x-band limiter
MMIC limiter
LNA x-band
x-band MMIC limiter
x-band lna chip
band Limiter
x-band mmic lna
x-band mmic
mmic AMPLIFIER x-band 10w
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CMH0819
Abstract: VQFN-24
Text: GaAs MMIC CMH0819 Target Datasheet • High-Linearity, Dual-Band LNA/Mixer IC for PCS IF Out use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNAs LNA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LO CELLULAR • LO – Input power range: -7.0 to 0 dBm
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CMH0819
VQFN-24
CMH0819
VQFN-24
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mmic c8
Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm
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CMH192
Q62705-K608
VQFN-20
10ability
CMH192
mmic c8
mmic MIXER 210
LNA marking A
mmic code marking P 18
mmic marking code P 18
mmic code c8
mmic code c7
H-192
Q62705-K608
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Untitled
Abstract: No abstract text available
Text: bEMSf lST DQlflD'lS 3^4 • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7134P -rv«s' « * * •« ate suW H ^ 2 ta m ^ wriW s""0” 1.90GHz BAND RX^X FRONT-END GaAs MMIC DESCRIPTION MGF7134P is a monolithic microwave integrated circuit for PHS OUTLINE DRAWING
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OCR Scan
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MGF7134P
90GHz
MGF7134P
55dBc
240MHz)
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gaas fet marking D
Abstract: No abstract text available
Text: Infineon *ai hnciogicsä GaAs MMIC CMH 0819 Preliminary Data Sheet • High-Linearity, Dual-Band LNA/Mixer 1C for use in CDMA Mobile Phones • integrated bypass switch for LNAs • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package • • LO - Input power down to: - 7.0 dBm
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P-VQFN-24-3
gaas fet marking D
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