Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    X-BAND MMIC Search Results

    X-BAND MMIC Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    X-BAND MMIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X-band Gan Hemt

    Abstract: FMA3015 MIL-HDBK-263 9-GHz
    Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Die: 4.52mmx3.05mm Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3015 52mmx3 FMA3015 FMA3015-000 FMA3015-000SQ FMA3015-000S3 DS081118 FMA3015-000SB X-band Gan Hemt MIL-HDBK-263 9-GHz

    X-band Gan Hemt

    Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
    Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3015 FMA3015 FMA3015-000 FMA3015-000SQ DS090306 FMA3015-000S3 X-band Gan Hemt 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier

    X-band Gan Hemt

    Abstract: MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip
    Text: FMA3010 FMA3010 X-BAND 5 W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS090727 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip

    X-band Gan Hemt

    Abstract: MIL-HDBK-263 fma3010
    Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS090612 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263

    X-band Gan Hemt

    Abstract: MIL-HDBK-263 D20BT470K1EX
    Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS091124 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263 D20BT470K1EX

    Untitled

    Abstract: No abstract text available
    Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS091124 FMA3010-000S3

    x-band mmic core chip

    Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
    Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase shifter, multi-bit attenuator, amplifier and serial-to-parallel


    Original     		PDF

    MIL-STD-1686

    Abstract: No abstract text available
    Text: FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 12dB Gain 7.5W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3015 is a high performance X-Band


    Original     		PDF FMA3015 FMA3015 22-A114. MIL-STD-1686 MILHDBK-263.

    FMA3015

    Abstract: No abstract text available
    Text: FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 15dB Gain 5W Saturated Output Power at 9V pHEMT Technology VD GENERAL DESCRIPTION RF Input The FMA3015 is a high performance X-Band


    Original     		PDF FMA3010 FMA3015 22-A114. MIL-STD-1686 MILHDBK-263.

    FMA3012

    Abstract: 22-A114 x-Band High Power Amplifier x-band mmic
    Text: FMA3012 X-BAND 10W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 16.5dB Gain 10W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3012 is a high performance X-Band


    Original     		PDF FMA3012 FMA3012 22-A114. MIL-STD-1686 MILHDBK-263. 22-A114 x-Band High Power Amplifier x-band mmic

    ka-band amplifier

    Abstract: TLCA01981 TLC Precision Wafer Technology
    Text: X-BAND TO KA-BAND AMPLIFIER TLC-KJGENAMP TLCA01981 • 9 to 37.5 GHz • PSAT >= 22 dBm • 2 Stage Design • GSS = 12 - 18 dB • Tunable for max GSS or PSAT Size: 2.17 x 1.3 x 0.1 mm DESCRIPTION AND APPLICATIONS The TLC-KJGEN Amplifier is a two-stage, MMIC


    Original     		PDF TLCA01981) 100mA ka-band amplifier TLCA01981 TLC Precision Wafer Technology

    Untitled

    Abstract: No abstract text available
    Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that


    Original     		PDF EMM5079X EMM5079X 1906B,

    EMM5079

    Abstract: EMM5079X
    Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that


    Original     		PDF EMM5079X EMM5079X 12nce 1906B, EMM5079

    EMM5079

    Abstract: ku vsat amplifier ED-4701 F14G 450MA
    Text: Preliminary ES/EMM5079X X/ Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 25 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5079X is a wide band power amplifier MMIC that


    Original     		PDF ES/EMM5079X ES/EMM5079X 1906B, EMM5079 ku vsat amplifier ED-4701 F14G 450MA

    MMIC X-band amplifier

    Abstract: No abstract text available
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier

    SN63

    Abstract: TGA8658-SG 14GHZ GAAS
    Text: Product Data Sheet August 5, 2008 Ku Band 2W Packaged Amplifier TGA8658-SG Key Features • • • • • • • • • Package Dimensions 6.4 x 6.4 x 3.0 mm Frequency Range: 13-17 GHz Optimized for VSAT band 13.75-14.5GHz 33 dB Nominal Gain Typical > 33.5 dBm Psat in VSAT band @ 7V


    Original     		PDF TGA8658-SG TGA8658-SG. TGA8658-SG SN63 14GHZ GAAS

    X-band amplifier

    Abstract: 462 008 0004 00 AF
    Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the


    Original     		PDF EMM5068X EMM5068X X-band amplifier 462 008 0004 00 AF

    Untitled

    Abstract: No abstract text available
    Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that


    Original     		PDF EMM5079ZB 20pin EMM5079ZB

    EMM5079

    Abstract: emm5079zb
    Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that


    Original     		PDF EMM5079ZB 20pin EMM5079ZB EMM5079

    EMM5079

    Abstract: EMM5079ZB SPO-2114 RO4003 emm5079zbt MA2830
    Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that


    Original     		PDF EMM5079ZB 20pin EMM5079ZB EMM5079 SPO-2114 RO4003 emm5079zbt MA2830

    Untitled

    Abstract: No abstract text available
    Text: TGA4517 Ka Band Power Amplifier Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm


    Original     		PDF TGA4517 TGA4517 35dBm 37GHz.

    ka band power amplifier

    Abstract: TGA4517 ka band power mmic
    Text: TGA4517 Ka Band Power Amplifier Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm


    Original     		PDF TGA4517 TGA4517 35dBm 37GHz. ka band power amplifier ka band power mmic

    ka-band mixer

    Abstract: 3 to 10 GHz mixer Ka-Band MMIC Mixer radar mmic TLCM01981 MX-JG95W46 Ka-band
    Text: MMICM Mixer KKa-Band A-BAND MMIC IXER MX-JG95W46 TLCM01981 95C00328E-9 • 16 to 40 GHz RF • 16 to 40 GHz LO • Conversion Loss < 10 dB • Optional Up or Down Conversion • Optional IF Output Location • 100 % Tested Size: 1.08 x 1.95 x 0.1 mm DESCRIPTION AND APPLICATIONS


    Original     		PDF MX-JG95W46 TLCM01981) 95C00328E-9 MX-JG95W46 ka-band mixer 3 to 10 GHz mixer Ka-Band MMIC Mixer radar mmic TLCM01981 Ka-band

    EMM5068VU

    Abstract: x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
    Text: ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION


    Original     		PDF ES/EMM5068VU EMM5068VU x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram