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    X-BAND LNA CHIP Search Results

    X-BAND LNA CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    X-BAND LNA CHIP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RF3858

    Abstract: RF pcb antenna 922 928 RF3858PCK-410 RF3858SR
    Text: RF3858 RF38583.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND GND GND LNA OUT GND LNA VCC Package: LGA, 32-pin, 8mm x 8mm x 1.2mm LNA IN 1 32 31


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    RF38583 RF3858 32-pin, DS111104 RF3858 RF3858SR RF3858TR13 RF3858PCK-410 RF pcb antenna 922 928 RF3858PCK-410 PDF

    LNA x-band

    Abstract: TGA2600-EPU
    Text: Advance Product Information March 4, 2004 X-band Ultra Low Noise Amplifier TGA2600-EPU Key Features • • • • • • • • Product Description Primary Applications • Radar • X band LNA, ECM The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates


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    TGA2600-EPU TGA2600-EPU LNA x-band PDF

    L5 marking

    Abstract: 800 mhz Cellular amplifier circuit diagram
    Text: CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm


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    CMH0819 VQFN-24 142-j CMH0819 L5 marking 800 mhz Cellular amplifier circuit diagram PDF

    CAP 0402

    Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
    Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm


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    CMH0819 VQFN-24 CMH0819 CAP 0402 GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMH192 Preliminary Datasheet ? High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones ? Integrated bypass switch for LNA ? GaAs PHEMT Process IF Out ? Leadless 3.5 x 3.5 mm. SMT package ? LO Input power range: -9.0 to 0 dBm ? Operating voltage range: 2.7 to 4 V


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    CMH192 VQFN-20 CMH192 PDF

    Infineon CMH192 GaAs

    Abstract: CMH192 mmic MIXER 210
    Text: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm


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    CMH192 VQFN-20 CMH192 Infineon CMH192 GaAs mmic MIXER 210 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -9.0 to 0 dBm


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    CMH192 VQFN-20 CMH192 PDF

    PG311

    Abstract: No abstract text available
    Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm


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    CMH192 Q62705-K608 VQFN-20 PG311 PDF

    k608

    Abstract: MMIC marking CODE c4 CMH192 GRP1555C7H100JZ01 mmic marking L MMIC CODE c4
    Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm


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    CMH192 Q62705-K608 VQFN-20 k608 MMIC marking CODE c4 CMH192 GRP1555C7H100JZ01 mmic marking L MMIC CODE c4 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMH0819 ? High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports ? Integrated bypass switch for LNAs CDMA ? GaAs PHEMT Process ? Leadless 3.5 x 4.5 mm. SMT package LNA ? LO Input power range: -7.0 to 0 dBm IF OUT ? Operating voltage range: 2.7 to 4 V


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    CMH0819 VQFN-24 142-j CMH0819 PDF

    mmic c8

    Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
    Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm


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    CMH192 Q62705-K608 VQFN-20 10ability CMH192 mmic c8 mmic MIXER 210 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information January 19,2001 Ka Band Wideband LNA/Driver TGA1319C Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband


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    TGA1319C 0007-inch PDF

    ka band lna

    Abstract: 019 triquint TGA1319C
    Text: Advance Product Information August 29, 2000 Ka Band Wideband LNA/Driver TGA1319C Key Features and Performance • • • • • • Chip Dimensions 2.169 mm x .904 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband


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    TGA1319C 0007-inch ka band lna 019 triquint TGA1319C PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3858 3.0 V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH Package: LGA, 32-pin, 8mm x 8mm x 1.2mm Features • Integrated LNA, PA and Transfer Switch  Small From Factor 8.0mm x 8.0mm x 1.2mm  50Ω Inputs and Outputs  Low Insertion Loss, High Isolation


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    RF3858 32-pin, 868MHz/900MHz RF3858 TheR13 RF3858PCK-410 DS130424 PDF

    TGA2600

    Abstract: TGA2600-EPU Ultra low noise amplifier triquint LNA
    Text: TGA2600 X Band Ultra Low Noise Amplifier Key Features • • • • • • • • Product Description The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 GHz with a typical mid-band noise figure of 0.7 dB. The device features 30dB of gain across


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    TGA2600 TGA2600-EPU 15-um TGA2600 Ultra low noise amplifier triquint LNA PDF

    TGA1319C-EPU

    Abstract: ka band lna
    Text: Advance Product Information June 14, 2001 Ka Band Wideband LNA/Driver TGA1319C-EPU Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband


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    TGA1319C-EPU 0007-inch TGA1319C-EPU ka band lna PDF

    TGA1319C-EPU

    Abstract: No abstract text available
    Text: Advance Product Information November 6, 2001 Ka Band Wideband LNA/Driver TGA1319C-EPU Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband


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    TGA1319C-EPU 0007-inch TGA1319C-EPU PDF

    TGA1319C

    Abstract: No abstract text available
    Text: Product Data Sheet August 5, 2008 K Band Wideband LNA/Driver TGA1319C Key Features and Performance Chip Dimensions 2.179 mm x .847 mm • • • • • 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.5 dB Nominal Noise Figure midband 21 dB Nominal Gain


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    TGA1319C TGA1319C PDF

    Untitled

    Abstract: No abstract text available
    Text: RFFM6903 2.5V TO 4.2V, ISM BAND, 1W 915MHz TRANSMIT/RECEIVE MODULE Package Style: LGA, 28-Pin, 6.0mm x 6.0mm x 0.975mm 24 23 22 GND 21 GND Integrated 50Ω Input/Output Match Tx Output Power: 30dBm Single 50Ω Bi-directional Transceiver Interface Integrated PA, filtering LNA


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    RFFM6903 915MHz 28-Pin, 975mm 30dBm 868MHz/900MHz DS130403 PDF

    QFN-24 footprint

    Abstract: CMOS LNA at 2.4 GHz DSB060829 RF3388 RF3388PCBA-410 2 GHz BJT rf 4 mm QFN
    Text: RF33883.7 V, Dual-Band Front-End Module RF3388 Proposed 3.7 V, DUAL-BAND FRONT-END MODULE SW3 SW2 SW1 LNA EN NC Package Style: QFN, 24-Pin, 4 mm x 4 mm 23 22 21 20 19 24 BLUETOOTH Features „ „ 17 RX2.4- Single-Module Radio Front-End 16 RX5.0+ Single Supply Voltage 3.15 V to


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    RF33883 RF3388 24-Pin, IEEE802 11a/b/g DSB060829 QFN-24 footprint CMOS LNA at 2.4 GHz DSB060829 RF3388 RF3388PCBA-410 2 GHz BJT rf 4 mm QFN PDF

    HC3014

    Abstract: No abstract text available
    Text: UMS X-BAND Tx-Rx CHIPSET The complete Solution for Military & Space Phased Array Radar Digital attenuator Core Chip Rx out Tx In Driver + HPA TTL Interface LNA Phase Shifter • CHC3014 1 Core chip (a 6-bit phase shifter, a 6-bit attenuator, an additional 2-bit attenuator for


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    HC3014 CHA1014 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output


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    FMA219 FMA219 FMA219-000 FMA219-000SQ FMA219-000S3 DS090509 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output


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    FMA219 FMA219 14dBm FMA219-000 FMA219-000SQ FMA219-000S3 DS121119 PDF

    Untitled

    Abstract: No abstract text available
    Text: AL P H A IN»/ S E M I C O N D U C T O R 33E D • OSfiSMHB Q D 0 1 0 2 1 D ■ ALP Ka-Band AA035L1-00 Monolithic LNA Features Description ■ ■ ■ ■ ■ Alpha’s AA035L1-00 is a Ka-band monolithic LNA chip that features an 0.25 x 200 micron MBE grown MESFET device. The gates are E-beam


    OCR Scan
    AA035L1-00 PDF