RF3858
Abstract: RF pcb antenna 922 928 RF3858PCK-410 RF3858SR
Text: RF3858 RF38583.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND GND GND LNA OUT GND LNA VCC Package: LGA, 32-pin, 8mm x 8mm x 1.2mm LNA IN 1 32 31
|
Original
|
PDF
|
RF38583
RF3858
32-pin,
DS111104
RF3858
RF3858SR
RF3858TR13
RF3858PCK-410
RF pcb antenna 922 928
RF3858PCK-410
|
LNA x-band
Abstract: TGA2600-EPU
Text: Advance Product Information March 4, 2004 X-band Ultra Low Noise Amplifier TGA2600-EPU Key Features • • • • • • • • Product Description Primary Applications • Radar • X band LNA, ECM The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates
|
Original
|
PDF
|
TGA2600-EPU
TGA2600-EPU
LNA x-band
|
L5 marking
Abstract: 800 mhz Cellular amplifier circuit diagram
Text: CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm
|
Original
|
PDF
|
CMH0819
VQFN-24
142-j
CMH0819
L5 marking
800 mhz Cellular amplifier circuit diagram
|
CAP 0402
Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm
|
Original
|
PDF
|
CMH0819
VQFN-24
CMH0819
CAP 0402
GaAs FET amplifer
mmic marking c8
GaAs FET amplifer chip
VQFN-24
MMIC marking code 132
MMIC marking code 101
mmic code marking P 18
mmic c8
|
Untitled
Abstract: No abstract text available
Text: CMH192 Preliminary Datasheet ? High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones ? Integrated bypass switch for LNA ? GaAs PHEMT Process IF Out ? Leadless 3.5 x 3.5 mm. SMT package ? LO Input power range: -9.0 to 0 dBm ? Operating voltage range: 2.7 to 4 V
|
Original
|
PDF
|
CMH192
VQFN-20
CMH192
|
Infineon CMH192 GaAs
Abstract: CMH192 mmic MIXER 210
Text: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm
|
Original
|
PDF
|
CMH192
VQFN-20
CMH192
Infineon CMH192 GaAs
mmic MIXER 210
|
Untitled
Abstract: No abstract text available
Text: CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -9.0 to 0 dBm
|
Original
|
PDF
|
CMH192
VQFN-20
CMH192
|
PG311
Abstract: No abstract text available
Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm
|
Original
|
PDF
|
CMH192
Q62705-K608
VQFN-20
PG311
|
k608
Abstract: MMIC marking CODE c4 CMH192 GRP1555C7H100JZ01 mmic marking L MMIC CODE c4
Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm
|
Original
|
PDF
|
CMH192
Q62705-K608
VQFN-20
k608
MMIC marking CODE c4
CMH192
GRP1555C7H100JZ01
mmic marking L
MMIC CODE c4
|
Untitled
Abstract: No abstract text available
Text: CMH0819 ? High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports ? Integrated bypass switch for LNAs CDMA ? GaAs PHEMT Process ? Leadless 3.5 x 4.5 mm. SMT package LNA ? LO Input power range: -7.0 to 0 dBm IF OUT ? Operating voltage range: 2.7 to 4 V
|
Original
|
PDF
|
CMH0819
VQFN-24
142-j
CMH0819
|
mmic c8
Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm
|
Original
|
PDF
|
CMH192
Q62705-K608
VQFN-20
10ability
CMH192
mmic c8
mmic MIXER 210
LNA marking A
mmic code marking P 18
mmic marking code P 18
mmic code c8
mmic code c7
H-192
Q62705-K608
|
Untitled
Abstract: No abstract text available
Text: Advance Product Information January 19,2001 Ka Band Wideband LNA/Driver TGA1319C Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband
|
Original
|
PDF
|
TGA1319C
0007-inch
|
ka band lna
Abstract: 019 triquint TGA1319C
Text: Advance Product Information August 29, 2000 Ka Band Wideband LNA/Driver TGA1319C Key Features and Performance • • • • • • Chip Dimensions 2.169 mm x .904 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband
|
Original
|
PDF
|
TGA1319C
0007-inch
ka band lna
019 triquint
TGA1319C
|
Untitled
Abstract: No abstract text available
Text: RF3858 3.0 V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH Package: LGA, 32-pin, 8mm x 8mm x 1.2mm Features • Integrated LNA, PA and Transfer Switch Small From Factor 8.0mm x 8.0mm x 1.2mm 50Ω Inputs and Outputs Low Insertion Loss, High Isolation
|
Original
|
PDF
|
RF3858
32-pin,
868MHz/900MHz
RF3858
TheR13
RF3858PCK-410
DS130424
|
|
|
TGA2600
Abstract: TGA2600-EPU Ultra low noise amplifier triquint LNA
Text: TGA2600 X Band Ultra Low Noise Amplifier Key Features • • • • • • • • Product Description The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 GHz with a typical mid-band noise figure of 0.7 dB. The device features 30dB of gain across
|
Original
|
PDF
|
TGA2600
TGA2600-EPU
15-um
TGA2600
Ultra low noise amplifier
triquint LNA
|
TGA1319C-EPU
Abstract: ka band lna
Text: Advance Product Information June 14, 2001 Ka Band Wideband LNA/Driver TGA1319C-EPU Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband
|
Original
|
PDF
|
TGA1319C-EPU
0007-inch
TGA1319C-EPU
ka band lna
|
TGA1319C-EPU
Abstract: No abstract text available
Text: Advance Product Information November 6, 2001 Ka Band Wideband LNA/Driver TGA1319C-EPU Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband
|
Original
|
PDF
|
TGA1319C-EPU
0007-inch
TGA1319C-EPU
|
TGA1319C
Abstract: No abstract text available
Text: Product Data Sheet August 5, 2008 K Band Wideband LNA/Driver TGA1319C Key Features and Performance Chip Dimensions 2.179 mm x .847 mm • • • • • 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.5 dB Nominal Noise Figure midband 21 dB Nominal Gain
|
Original
|
PDF
|
TGA1319C
TGA1319C
|
Untitled
Abstract: No abstract text available
Text: RFFM6903 2.5V TO 4.2V, ISM BAND, 1W 915MHz TRANSMIT/RECEIVE MODULE Package Style: LGA, 28-Pin, 6.0mm x 6.0mm x 0.975mm 24 23 22 GND 21 GND Integrated 50Ω Input/Output Match Tx Output Power: 30dBm Single 50Ω Bi-directional Transceiver Interface Integrated PA, filtering LNA
|
Original
|
PDF
|
RFFM6903
915MHz
28-Pin,
975mm
30dBm
868MHz/900MHz
DS130403
|
QFN-24 footprint
Abstract: CMOS LNA at 2.4 GHz DSB060829 RF3388 RF3388PCBA-410 2 GHz BJT rf 4 mm QFN
Text: RF33883.7 V, Dual-Band Front-End Module RF3388 Proposed 3.7 V, DUAL-BAND FRONT-END MODULE SW3 SW2 SW1 LNA EN NC Package Style: QFN, 24-Pin, 4 mm x 4 mm 23 22 21 20 19 24 BLUETOOTH Features 17 RX2.4- Single-Module Radio Front-End 16 RX5.0+ Single Supply Voltage 3.15 V to
|
Original
|
PDF
|
RF33883
RF3388
24-Pin,
IEEE802
11a/b/g
DSB060829
QFN-24 footprint
CMOS LNA at 2.4 GHz
DSB060829
RF3388
RF3388PCBA-410
2 GHz BJT
rf 4 mm QFN
|
HC3014
Abstract: No abstract text available
Text: UMS X-BAND Tx-Rx CHIPSET The complete Solution for Military & Space Phased Array Radar Digital attenuator Core Chip Rx out Tx In Driver + HPA TTL Interface LNA Phase Shifter • CHC3014 1 Core chip (a 6-bit phase shifter, a 6-bit attenuator, an additional 2-bit attenuator for
|
Original
|
PDF
|
HC3014
CHA1014
|
Untitled
Abstract: No abstract text available
Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output
|
Original
|
PDF
|
FMA219
FMA219
FMA219-000
FMA219-000SQ
FMA219-000S3
DS090509
|
Untitled
Abstract: No abstract text available
Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output
|
Original
|
PDF
|
FMA219
FMA219
14dBm
FMA219-000
FMA219-000SQ
FMA219-000S3
DS121119
|
Untitled
Abstract: No abstract text available
Text: AL P H A IN»/ S E M I C O N D U C T O R 33E D • OSfiSMHB Q D 0 1 0 2 1 D ■ ALP Ka-Band AA035L1-00 Monolithic LNA Features Description ■ ■ ■ ■ ■ Alpha’s AA035L1-00 is a Ka-band monolithic LNA chip that features an 0.25 x 200 micron MBE grown MESFET device. The gates are E-beam
|
OCR Scan
|
PDF
|
AA035L1-00
|
