Medium Power Amplifiers
Abstract: No abstract text available
Text: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input
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miteq amf
Abstract: Medium Power Amplifiers x-band power amplifier power amplifiers
Text: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input
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WR284* ISOLATOR
Abstract: MS3116E-10-6S WR340 flange dimensions
Text: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS
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2002/96/EC
2002/96/EC
C-39B
WR284* ISOLATOR
MS3116E-10-6S
WR340 flange dimensions
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Untitled
Abstract: No abstract text available
Text: 16W / 20W / 25W X-Band Block Up Converter GaN Technology 16W / 20W / 25W GaN-based X-Band BUC SSPBg-210XTM series Designed to meet MIL-STD-188-164A Features • Up-converts an L-Band input frequency 950 – 1450 MHz to the X-Band frequency of 7.9 – 8.4 GHz
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SSPBg-210XTM
MIL-STD-188-164A
SSPBg-210X
CPR112
PB-SSPBmg-16W-20W-25W-X-25-13178
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Untitled
Abstract: No abstract text available
Text: 7.2 TO 8.4 GHz SATELLITE I/Q TEST MODULATOR MODULATOR PRODUCTS MODEL: SDM0708LI3CDQ TRI-BAND, X FEATURES • Tri-band, X Downlink . 7.2 to 7.7 GHz Uplink . 7.9 to 8.4 GHz
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SDM0708LI3CDQ
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TL25XI
Abstract: HPA cpi CPI twt tube 400 W IESS-308/309 phase noise specification
Text: CPI 2.25 and 2.50 kW SuperLinear tm TWT Amplifiers for Satellite Communications X- Band The TL22XI and TL25XI TWTAs X-Band Up to 2.5 kW 1110 W operating TWT Compact High Power Amplifiers, featuring high efficiency, small size and integral computer interface.
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TL22XI
TL25XI
HPA cpi
CPI twt tube 400 W
IESS-308/309 phase noise specification
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK35V4045
MGFK35V4045
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35W amplifiers
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK35V4045
MGFK35V4045
35W amplifiers
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5.5w
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK37V4045
MGFK37V4045
5.5w
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MGFX39V0717
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFX39V0717 10.7 – 11.7 GHz BAND / 8W DESCRIPTION The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFX39V0717
MGFX39V0717
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFX36V0717 10.7 – 11.7 GHz BAND / 4W DESCRIPTION The MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFX36V0717
MGFX36V0717
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK25V4045
MGFK25V4045
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Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK30V4045
MGFK30V4045
350mA
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK39V4045
MGFK39V4045
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK39V4045
MGFK39V4045
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK37V4045
MGFK37V4045
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK38A3745
MGFK38A3745
50GHz
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK30V4045
MGFK30V4045
350mA
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK33V4045
MGFK33V4045
700mA
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK25V4045
MGFK25V4045
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK33V4045
MGFK33V4045
700mA
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MGFX36V
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFX36V0717 10.7 – 11.7 GHz BAND / 4W DESCRIPTION The MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFX36V0717
MGFX36V0717
MGFX36V
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F1375
Abstract: 9137 006 208 MGFK38A3745
Text: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK38A3745
MGFK38A3745
50GHz
100ohm
F1375
9137 006 208
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klystron x 13
Abstract: klystron Klystrons mpp 250
Text: cpi[ CPI Microwave Power Products’ MPP klystrons were the first to be used in both commercial and military satellite communications uplinks and are now the worldwide standards for this class of operation covering C-band, X-band and Ku-band frequencies. In 1977, MPP introduced high performance Ka-band amplifiers for earth-satellite
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fo-50
klystron x 13
klystron
Klystrons
mpp 250
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