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    X BAND PULSED AMPLIFIER RADAR Search Results

    X BAND PULSED AMPLIFIER RADAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    X BAND PULSED AMPLIFIER RADAR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    X-band radar module

    Abstract: MAAP-009748-000000
    Text: MAAP-009748-000000 X-Band 17W Pulsed Power Amplifier Module 8.5 - 11.0 GHz 2010 Data Sheet v1 The most important thing we build is trust Features Description • Nominal 17W Peak Output Power The Cobham Sensor Systems X-Band 17W Module is a class A biased GaAs


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    MAAP-009748-000000 X-band radar module MAAP-009748-000000 PDF

    MS2601

    Abstract: radar amplifier s-band
    Text: MS2601 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 x 400 2NL FLG DESCRIPTION: 1 The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz. 2 4 3 FEATURES INCLUDE: • Input/Output Matching • Gold Metallization


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    MS2601 MS2601 radar amplifier s-band PDF

    ASI2223-20

    Abstract: ASI10533
    Text: ASI2223-20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .310 2L FLG The ASI 2223-20 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications A 4x .062 x 45° .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Networks


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    ASI2223-20 ASI10533 ASI2223-20 ASI10533 PDF

    Untitled

    Abstract: No abstract text available
    Text: MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Features •        12 W X-Band Power Amplifier 21 dB Large Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested


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    MAAP-015030 MIL-STD-833 MAAP-015030 PDF

    Untitled

    Abstract: No abstract text available
    Text: MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz Rev. V1 Features •        12 W X-Band Power Amplifier 36 dB Small Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested


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    MAAP-015035 MIL-STD-833 MAAP-015035 PDF

    SSPA C Band

    Abstract: No abstract text available
    Text: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier • Aethercomm Part Number SSPA 1.20-1.40-100 is a Minimum output power = 100 Watts @ 85C base plate high power, pulsed solid state amplifier used for milit ary telemetry, data transmission and radar. This SSPA


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    C band Radar Transponder

    Abstract: IFF Radar Transponder x band radar transmitters Aethercomm high power microwave transmitter SSPA C Band 1030 mhz DPSK 1030 PULSED
    Text: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.00-1.10-100 is a high power, • Minimum output power = 18 dBw pulsed, secondary surveillance radar, amplifier that • Pulse droop < 0.05 dB for a 32 uSec pulse


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    x band pulsed amplifier radar

    Abstract: pulse compression radar x band radar transmitters
    Text: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.2-1.4-200 is a high power, solid state RF amplifier SSPA for use in military RADAR systems. It offers greater than 43 dB of gain from 1.2 GHz to 1.4 GHz. It has a


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    x band radar transmitters

    Abstract: x band pulsed amplifier radar SSPA C Band 15 GHz high power amplifier
    Text: Solid State Pulsed Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.2-1.4-200 is a high power, • 200 watts minimum output power solid state RF amplifier SSPA for use in military • 40% efficiency minimum RADAR systems.


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    Untitled

    Abstract: No abstract text available
    Text: Microwave Power Modules Microwave Power Modules product summary .the power in microwaves! MPMS Microwave Power Modules For Radar, EW and Communications/Datalinks Applications “Perfectly Packaged Power” aptly describes TMD’s MPMs, our newest and neatest range of rugged


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    PTX8000 PTM8292 PTM8295 EVD6106 EVD6894 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMICs, RFICs, Integrated system solution Microwave & Millimeter wave product Line = VectraWave is a solution provider for integrated electronic in high frequency, microwaves and optoelectronic for telecommunications and


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    30Gbps 30GHz 16X16 12GHz 24X18 40Ghz 43GHz/21 PDF

    solid state amplifier

    Abstract: 300 MHZ LNA RF power amplifier MHz
    Text: Solid State Low Noise Amplifier Low Noise UHF Band Solid State Amplifier Aethercomm P/N LNA 0.28-0.30-2.0 is a low noise • Noise figure is 1.8 dB typical solid state amplifier for use in the USMC TPN22 • Nominal gain is 50 dB Radar. This is a direct replacement for the original


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    TPN22 solid state amplifier 300 MHZ LNA RF power amplifier MHz PDF

    SSPA

    Abstract: No abstract text available
    Text: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.08-1.10-10 is a high power, • Minimum output power = 40 Watts 40 watt pulsed, L band SSPA used in Secondary • Pulse droop < 0.05 dB for a 1 uSec pulse


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    MMIC X-band amplifier

    Abstract: No abstract text available
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


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    RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier PDF

    sspa transmitter x band

    Abstract: No abstract text available
    Text: WaveFront W Front The QuinStar Newsletter Spring 2014 Twenty First Anniversary Issue Message from the CEO/President Greetings reetings and thanks from the QuinStar family on the occasion of our 21st Anniversary celebration! This special issue of WaveFront


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    1980s sspa transmitter x band PDF

    AMPLIFIER 1500w

    Abstract: transformer rectifier unit x band pulsed amplifier radar RF connector high power rf 10kW 1500w power supply Radar x band radar 3 phase monitor 3-phase monitor
    Text: Travelling Wave Tube Amplifier Type LY72 Description The LY72 is a travelling wave tube amplifier comprising an Albacom LY73 pulsed E-F Band travelling wave tube and matched, modular power supply. The TWTA produces a 10kW peak output power at up to 2.6% duty ratio, and operates from a 200 Volt, 3 phase, 400 Hz


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    602-14-19-S 680mm 490mm 180mm AMPLIFIER 1500w transformer rectifier unit x band pulsed amplifier radar RF connector high power rf 10kW 1500w power supply Radar x band radar 3 phase monitor 3-phase monitor PDF

    TWTA

    Abstract: AHPA-10-2000 radar circuit modulator x band radar 62GB-57A LY132 x band pulsed amplifier radar RF connector Amphenol HV 62GB
    Text: Travelling Wave Tube Amplifier Type AHPA-10-2000 Description The AHPA-10-2000 is a travelling wave tube amplifier comprising of an Albacom LY132 pulsed I band travelling wave tube and matched, modular power supply. The TWTA produces 2.0kW peak output power at up to 2% duty ratio, and operates from a 24 to 32


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    AHPA-10-2000 AHPA-10-2000 LY132 LY132 62GB-57A-16-26-P RS422 62GB-57A-16-26-S 100mV/mA TWTA radar circuit modulator x band radar 62GB-57A x band pulsed amplifier radar RF connector Amphenol HV 62GB PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    8002 amplifier

    Abstract: SSB Modulator application note Wideband FM Modulator SSB Modulator IQ vector generator MHZ SSB Modulator DESIGN Chirp x band radar x band pulsed amplifier radar waveform generator specifications
    Text: Application Note Generating frequency chirp signals to test radar systems Radar chirp signals can be simulated by the 3410 series signal generator using the internal arbitrary waveform generators, external IQ inputs or wideband FM/pulse capability. For the very latest specifications visit


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    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    GROUND BASED RADAR

    Abstract: AIRBORNE DME vimostm
    Text: Thermal Characteristics & Considerations VIMOS Product Portfolio VIMOS THERMAL CHARACTERISTICS & CONSIDERATIONS Introduction: This document provide’s the RF amplifier design Engineer with a useful reference to aid in thermal considerations and calculations, applied to the VIMOSTM portfolio of RF power transistors. Rather


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    1214-1400MHz 200uS GROUND BASED RADAR AIRBORNE DME vimostm PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    RX1214B

    Abstract: erie 1250-003
    Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor RX1214B170W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor narrowband amplifier.


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    RX1214B170W 100A101kp50x 1214B MBC981 FO-91B. 71106Eb RX1214B erie 1250-003 PDF