DAN235K
Abstract: DAP236U
Text: BAND SWITCHING & PIN DIODES BAND SWITCHING DIODES Ta = 25˚C Circuit Part Part No. Type Pkg. marking DAN235K 2/3A SC-59 M DAN235U 2/3A UMD M DAP236K 2/3B SC-59 X DAP236U 2/3B UMD X DAN235E 2/3A EM3 M 1SS356 – USM 1SS390 – EMD2 VF: IF = 10mA CT: f = 1MHz
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DAN235K
SC-59
DAN235U
DAP236K
DAP236U
DAN235E
1SS356
1SS390
100MHz
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MARKING A SC59
Abstract: No abstract text available
Text: BAND SWITCHING & PIN DIODES SINGLE AND DUAL DIODES 2/3 A 2/3 B 1 2 2/3 C 1 2 3 1 2 3 3 BAND SWITCHING DIODES Ta = 25˚C Circuit Part Part No. Type Pkg. marking DAN235K 2/3A SC-59 M DAN235U 2/3A UMD M DAP236K 2/3B SC-59 X DAP236U 2/3B UMD X DAN235E 2/3A EM3
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DAN235K
SC-59
DAN235U
DAP236K
DAP236U
DAN235E
1SS356
1SS390
100MHz
MARKING A SC59
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MA47223
Abstract: MA47208 stripline filter MA47200 ODS-144
Text: MA47200 Series Stripline PIN Diode Switch Modules M/A-COM Products Rev. 2 Features • • • • • • Broadband 50 Ohms Design Through X Band High Power Capacity Voltage Ratings to 1000V Fast Switching Speeds Hermetically Sealed Package RoHS Compliant
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MA47200
MA47223
MA47208
stripline filter
ODS-144
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MA47223-144
Abstract: ODS-144
Text: MA47200 Series Stripline PIN Diode Switch Modules Features ♦ ♦ ♦ ♦ ♦ ♦ Broadband 50 Ohm Design Through X Band High Power Handling Voltage Ratings to 1000V Fast Switching Speeds Hermetically Sealed Package RoHS Compliant V4 Absolute Maximum Rating1 @ TA = +25°C
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MA47200
MA47223-144
ODS-144
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Untitled
Abstract: No abstract text available
Text: MA47200 Series Stripline PIN Diode Switch Modules Features • • • • • • Broadband 50 Ohms Design Through X Band High Power Capacity Voltage Ratings to 1000V Fast Switching Speeds Hermetically Sealed Package RoHS Compliant Description This series of M/ACOM semiconductor products is
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MA47200
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MA4P504-144
Abstract: MA4P504 ODS-144 stripline stripline filter 150CT
Text: MA4P504-144 Stripline PIN Diode Switch Modules Features • • • • • • Broadband 50 Ohms Design Through X Band High Power Capacity Voltage Ratings to 1000V Fast Switching Speeds Hermetically Sealed Package RoHS Compliant Description This series of M/ACOM semiconductor products is
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MA4P504-144
MA4P504-144
MA4P504
ODS-144
stripline
stripline filter
150CT
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MA47208
Abstract: ODS-144 MA47223 MA47208-114 MA47222-144 MA47200 PIN diode switch
Text: MA47200 Series Stripline PIN Diode Switch Modules Features ♦ ♦ ♦ ♦ ♦ ♦ Broadband 50 Ohm Design Through X Band High Power Handling Voltage Ratings to 1000V Fast Switching Speeds Hermetically Sealed Package RoHS Compliant Description These M/A-Com Technology Solutions switch modules
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MA47200
MA47208
ODS-144
MA47223
MA47208-114
MA47222-144
PIN diode switch
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MA47223
Abstract: MA47208 ODS-144 MIL-STD-750 Method 2076 MA47200
Text: MA47200 Series Stripline PIN Diode Switch Modules Rev. V3 Features • • • • • • Broadband 50 Ohms Design Through X Band High Power Capacity Voltage Ratings to 1000V Fast Switching Speeds Hermetically Sealed Package RoHS Compliant Description This series of M/ACOM semiconductor products is
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MA47200
MA47223
MA47208
ODS-144
MIL-STD-750 Method 2076
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equivalent 3140
Abstract: a 3140 HP 5082-3140 AN929 hp 3140
Text: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz
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Untitled
Abstract: No abstract text available
Text: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz
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5965-8882E
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Untitled
Abstract: No abstract text available
Text: RF3146 RF3146QuadBand GSM850/GSM 900/DCS/PCS Power Amp Module QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Part of the POLARIS TOTAL RADIO™ Solution RoHS Compliant & Pb-Free Product Package Style: LFM, 48-Pin, 7 mm x 7 mm x 0.9 mm Features Integrated VREG
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RF3146QuadBand
GSM850/GSM
900/DCS/PCS
RF3146
GSM850/GSM900/DCS/PCS
48-Pin,
35dBm
33dBm
GSM850/EGSM900/DCS/PCS
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: RF3146 RF3146QuadBand GSM850/GSM 900/DCS/PCS Power Amp Module QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE NOT FOR NEW DESIGNS Part of the POLARIS TOTAL RADIO™ Solution RoHS Compliant & Pb-Free Product Package Style: LFM, 48-Pin, 7 mm x 7 mm x 0.9 mm
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RF3146QuadBand
GSM850/GSM
900/DCS/PCS
RF3146
GSM850/GSM900/DCS/PCS
48-Pin,
GSM850/EGSM900/DCS/PCS
RF3146
DS091005
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DS0603
Abstract: No abstract text available
Text: RF3146 RF3146QuadBand GSM850/GSM 900/DCS/PCS Power Amp Module QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Part of the POLARIS TOTAL RADIO™ Solution RoHS Compliant & Pb-Free Product Package Style: LFM, 48-Pin, 7 mm x 7 mm x 0.9 mm Features Integrated VREG
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RF3146QuadBand
GSM850/GSM
900/DCS/PCS
RF3146
GSM850/GSM900/DCS/PCS
48-Pin,
35dBm
33dBm
GSM850/EGSM900/DCS/PCS
Fun90MHz,
DS0603
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MA47221
Abstract: ma47222 MA47200 MA47220
Text: yflftçQH _ MA47200 Series Stripline PIN Diode Switch Modules Features • BROADBAND 50 OHM DESIGNS THROUGH X BAND ■ CIRCUIT CHARACTERIZED ■ HIGH POWER CAPABILITY ■ VOLTAGE RATINGS TO 1000 VOLTS
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MA47200
MA47221
ma47222
MA47220
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1SV307
Abstract: HP4291A
Text: 1SV307 TOSHIBA 1 SV3 0 7 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = l.lO Typ. : Or = 0.3pF (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV307
HP4291A
1SV307
HP4291A
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5082-3071
Abstract: HP 5082-3140 5082-3046 hp pin diode 5082-3040 5082-3040 equivalent 5082-3041 RS 3041 C NSL 5082 HP PIN DIODES
Text: 5082 3040/41 5082-3046 5082-3071 5082 3140/41 5082-3170 5082-3340 - H E W L E T T ^ PACKARD COMPONENTS PIN DIODES FOR STRIPLINE AND MICROSTRIP SWITCHES ATTENUATORS AND LIMITERS Features HERMETIC 5082-3140, 3141, 3170 BROADBAND OPERATION HF through X-band
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5082-30n
AN929;
5082-3071
HP 5082-3140
5082-3046
hp pin diode
5082-3040
5082-3040 equivalent
5082-3041
RS 3041 C
NSL 5082
HP PIN DIODES
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toshiba diode 1A
Abstract: 1SV308 HP4291A
Text: TO SHIBA 1SV308 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 308 VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = 1.10 Typ. : Or = 0.3pF (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV308
HP4291A
toshiba diode 1A
1SV308
HP4291A
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5965-8882E
Abstract: POWER12 diode ph-150
Text: That müHÆHEWLETT PACKARD Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data Features • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz
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5965-8882E
44475A4
5965-8882E
POWER12
diode ph-150
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MA47221
Abstract: HER 305 diode MA47220
Text: Æ an A M P com pany Stripline PIN Diode Switch Modules MA47200 Series V 2.00 Features • • • • • • Broadband 50 Ohm Designs Through X Band Circuit Characterized High Power Capacity Voltage Ratings to 1000 Volts Fast Switching Speed to 10 Nanoseconds
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MA47200
MA47221
HER 305 diode
MA47220
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PF7A
Abstract: No abstract text available
Text: 1SV252 TOSHIBA TOSHIBA DIODE 1 SILICON EPITAXIAL PIN TYPE 51 Unit in mm V H F- U H F BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
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1SV252
SC-70
100MHz
PF7A
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marking BL
Abstract: 1sv128
Text: TOSHIBA 1SV128 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 S V 128 V H F -U H F BAND RF ATTENUATOR APPLICATIONS. • • Small Package Small Total Capei tance : Cx = 0.25pF Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward Current
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1SV128
SC-59
marking BL
1sv128
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MA47221
Abstract: No abstract text available
Text: A߀ßm_ MA47200 Series Stripline PIN Diode Switch Modules Features • BROADBAND 50 OHM DESIGNS THROUGH X BAND £è 114 ■ CIRCUIT CHARACTERIZED « ■ HIGH POWER CAPABILITY ' I I 1 144 ■ VOLTAGE RATINGS TO 1000 VOLTS 1 ■ FAST SWITCHING SPEED TO 10
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MA47200
MA47221
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Untitled
Abstract: No abstract text available
Text: 1SV172 TO SHIBA 1 S V 1 72 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm V H F- U H F BAND RF ATTENUATOR APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
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1SV172
SC-59
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SV128 1 SV128 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm V H F- U H F BAND RF ATTENUATOR APPLICATIONS. • • Small Package Small Total Capcitance : Or = 0.25pF Typ. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Reverse Voltage
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1SV128
SV128
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