RF1136
Abstract: RF113 RF327
Text: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB
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RF1136
12-Pin,
RF1136
DS090630
RF113
RF327
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Untitled
Abstract: No abstract text available
Text: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB
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RF1136
12-Pin,
RF1136
DS090630
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MA4E1245KE
Abstract: MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 MA4E1245 transistor schottky model spice microwave diode
Text: Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features ● ● ● ● ● ● ● Designed for High Volume Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB SSB at X-Band High Detector Sensitivity: -55 dBm TSS
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MA4E1245
OT-23
-j100
MA4E1245KE
MA4E1245KA
MA4E1245KB
350AT
S11 SCHOTTKY diode
20/Molectron Detector J100
transistor schottky model spice
microwave diode
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PDF
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Untitled
Abstract: No abstract text available
Text: RF1147 BROADBAND LOW POWER SP4T SWITCH Package Style: QFN, 16-pin, 3 mm x 3 mm Features Low Frequency - 2.5 GHz Operation Very Low Insertion Loss: Cell Band 0.35 dB PCS Band 0.45 dB High Isolation: Cell Band 29 dB PCS Band 22 dB Compatible With Low Voltage
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RF1147
16-pin,
RF1147
DS110103
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PDF
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LG diode 831
Abstract: MA4E2054-287T
Text: Surface Mount Low Barrier X-Band Schottky Diode MA4E2054 Series MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diodes Package Outlines Features • • • • • • • • • Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer
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MA4E2054
100nA
500nA
OT-23
OT-143
OT-323
OD-323
LG diode 831
MA4E2054-287T
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PDF
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RF1156
Abstract: No abstract text available
Text: RF1156 BROADBAND MEDIUM POWER SP5T SWITCH Package Style: QFN, 16-pin, 3 mm x 3 mm Features Low Frequency - 2.5 GHz Operation Very Low Insertion Loss: Cell Band 0.35 dB PCS Band 0.60 dB High Isolation: Cell Band 29 dB PCS Band 22 dB Compatible With Low Voltage
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RF1156
16-pin,
RF1156
DS090709
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FMC2122LN-03
Abstract: k-band amplifier
Text: FMC2122LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC2122LN-03
12dBm
FMC2122LN-03
k-band amplifier
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FMC1819LN-02
Abstract: Fujitsu Ku microwave
Text: FMC1819LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1819LN-02
12dBm
FMC1819LN-02
Fujitsu Ku microwave
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1N831
Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
Text: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and
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1N831
1N831A
1N831B
1N831C
1N832
1N832A
1N832B
1N832C
1N831
1N832A
"Point Contact Diodes"
Silicon Point Contact Mixer Diodes
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FMC2223LN-03
Abstract: fujitsu k-band
Text: FMC2223LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC2223LN-03
12dBm
FMC2223LN-03
fujitsu k-band
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555 databook
Abstract: FMC1718LN-02 "ku band" amplifier
Text: FMC1718LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1718LN-02
12dBm
FMC1718LN-02
555 databook
"ku band" amplifier
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PDF
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RF1130
Abstract: No abstract text available
Text: RF1130 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 16-pin, 3 mm x 3 mm Features Low Frequency - 2.5 GHz Very Low Insertion Loss: Cell Band: 0.3 dB Typ. PCS Band: 0.4 dB (Typ.) High Isolation Cell Band: 29.5 dB (Typ.) PCS Band: 21 dB (Typ.)
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RF1130
16-pin,
IEEE802
11b/g
RF1130
de336-678-5570
DS090630
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PDF
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Untitled
Abstract: No abstract text available
Text: RF1130 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 16-pin, 3 mm x 3 mm Features ̈ ̈ ̈ ̈ ̈ ̈ Low Frequency - 2.5 GHz Very Low Insertion Loss: Cell Band: 0.3 dB Typ. PCS Band: 0.4 dB (Typ.) High Isolation Cell Band: 29.5 dB (Typ.) PCS Band: 21 dB (Typ.)
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RF1130
16-pin,
IEEE802
11b/g
DS090630
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PDF
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RF1140
Abstract: No abstract text available
Text: RF1140 BROADBAND HIGH POWER SP4T SWITCH Package Style: QFN, 16-pin, 3 mm x 3 mm Features Low Frequency - 2.5 GHz Very Low Insertion Loss: Cell Band: 0.3 dB Typ. PCS Band: 0.5 dB (Typ.) High Isolation Cell Band: 28 dB (Typ.) PCS Band: 21 dB (Typ.)
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RF1140
16-pin,
IEEE802
11b/g
RF1140
desig6-678-5570
DS090630
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PDF
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NE3517S03
Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS
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NE3517S03
NE3517S03-T1C
NE3517S03-T1C-A
NE3517S03-T1D
NE3517S03-T1D-A
NE3517S03
rt/duroid 5880
RT DUROID 5880
NE3517S03-A
marking t1c
rogers 5880
HS350
NE3517S03-T1D-A
NE3517S03-T1C
rt duroid
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S1377
Abstract: S708 Skyworks PA LTE
Text: PRELIMINARY DATA SHEET SKY65080-70LF: 1500-2500 MHz Low Noise Power Amplifier Driver Applications GND x UHF television 4 x TETRA radios x PCS, DCS, 2.5G, 3G handsets x ISM band transmitters x WCS fixed wireless x 802.16 WiMAX x 3GPP LTE Features x Wideband frequency range: 1500 to 2500 MHz
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SKY65080-70LF:
SKY65080-70LF
201042D
S1377
S708
Skyworks PA LTE
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Untitled
Abstract: No abstract text available
Text: M/A-COM PCS 1900 ULTRA LOW LOSS FULL BAND RECEIVE FILTER Features • • • • Full PCS Rx Band 1850 - 1910 MHz Ultra Low Insertion Loss < 0.4 dB (typical) High Rejection in Tx Band (1930 - 1990 MHz) > 60 dB Small Size - 4.65 x 3.15 x 1.7 Description
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EL36
Abstract: ND5052-3G
Text: X TO K*BAND GaAs SCHOTTKY BARRIER MIXER DIODE FEATURES OUTLINE DIMENSIONS Untutnmm • X BAND MIXgR DIODE OUTLINE 3 6 • LOW NOISE GaAs SCHOTTKY DIODE NF = 5 dB TYP at I » 10 GHz • LOW TERMINAL CAPACITANCE C i =* 0.3 pF MAX at 1 M Hi • SMALL SIZE • LOW COST
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ND5052-3G
ND5052-3G
EL36
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AAY50
Abstract: AAY50R K1007 Germanium diode Mullard
Text: M ICROW AVE M IXER DIODES AAY50 AAY50R TENTATIVE DATA Coaxial germanium point-contact diodes for u se in pre-tuned X-band low noise m ixer c irc u its. The AAY50 and AAY50R a re intended as low noise re tro fits at X-band frequencies for coaxial m ixer diodes, types SIM2/5,
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AAY50
AAY50R
AAY50R
SO-26
247in
AAY50-Page
AAY50,
K1007
Germanium diode Mullard
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15S2
Abstract: K1007
Text: MICROWAVE MIXER DIODE I48CAY/A Dev. No. DEVELOPMENT SAMPLE DATA Schottky b a rrie r low noise m ixer diode mounted in a L .I.D . type envelope prim arily intended for hybrid integrated circuit applications at X band. QUICK REFERENCE DATA Typical noise figure at X band
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I48CAY/A
148CAY/Ais
K1007
375GHz,
45MHz
K1007,
45MHz.
148CAY/A
15S2
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Untitled
Abstract: No abstract text available
Text: C X A 1211M SONY. Electronic Volume Description The CXA1211M is a wide band general purpose VCA. This bipolar IC incorporates 2 channels. Features • Wide band frequency characteristics: 100kHz to 20M H z ~0.5dB • Wide dynamic range • Low noise, low distortion
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1211M
CXA1211M
100kHz
CXA1211M
008-P-0225-A
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nec d 588
Abstract: NEC 2532 NEC 2504
Text: DATA SHEET SILICON TRANSISTOR uPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The /xPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS am plify low noise in the VHF band to the UHF band.
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uPA811T
2SC4228)
/xPA811T
nec d 588
NEC 2532
NEC 2504
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PDF
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1N23 diode
Abstract: 1N23 K1007 1N23 Diode Holder 1n23 jan noise diode
Text: MICROWAVE MIXER DIODE I48CAY/B Dev. No. DEVELOPMENT SAMPLE DATA Schottky b a rrie r low noise m ixer diode for use at X band. The 148CAY/B is interchangeable with the 1N23 s e r ie s . QUICK REFERENCE DATA Typical noise figure at X band 6.5 Frequency range
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I48CAY/B
148CAY/B
375GHz,
45MHz
K1007,
45MHz.
JAN-106holder,
1N23 diode
1N23
K1007
1N23 Diode Holder
1n23 jan
noise diode
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR A1PA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The ¿¡PA811T has built-in 2 low-voltage transistors w hich are designed to PACKAGE DRAW INGS am plify low noise in the VHF band to the UHF band.
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A1PA811T
2SC4228)
PA811T
PA811T
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