MSC 501 302
Abstract: MSC 501 302 diode B 103 K 1KV SEC ceramic capacitor ceramic capacitor 1kV 6.8 nF X7R 3KV 3300 pf ceramic capacitor 6,8 nF 1kV p 5 capacitor 103 1KV 1210 ceramic capacitor .22uf 10 250V Meritek 6.8 nF ceramic capacitor MSC 501
Text: MA Series Multilayer Ceramic Chip Capacitors MERITEK FEATURES AND APPLICATIONS Dielectric x COG x NPO x x x X7R/X5R x x x Y5V x Features Ultra-stable Low dissipation factor Tight tolerance available Good frequency performance No aging of capacitance
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HS-3530RH
Abstract: HS2-3530RH-8 HS2-3530RH-Q
Text: HS-3530RH Low Power, Radiation Hardened Programmable Operational Amplifier August 1995 Features Pinout • Radiation Environment - Neutron Fluence Φ 5 x 1012 n/cm2 (E ≥ 10KeV) - Gamma Rate (γ) 1 x 109 RAD (Si)/s - Gamma Dose (γ) 1 x 106 RAD (Si) 8 LEAD METAL CAN PACKAGE (CAN)
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HS-3530RH
10KeV)
MIL-STD-1835
100kHz
HS-3530RH
HS2-3530RH-8
HS2-3530RH-Q
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2032b
Abstract: 085002 6-103958-1 amp quality crimping handbook 87733-1 UL 2896 11027 UL 94v-2 mt 4407 1-87666-6
Text: AMPMODU Interconnection System Mod IV Receptacle Assemblies, Single-Row, Outrigger Design .100 x .100 [2.54 x 2.54] Centerline, End To End Stackable Dual Entry, End Stackable, Low Profile, .100 x .100 [2.54 x 2.54] Centerline, .200 [5.08] Tine Spacing .125±.010
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244252
Abstract: 86016-2 crimp tool 16500-3 1307819
Text: AMPMODU Interconnection System Mod IV Receptacle Assemblies, Single-Row, Outrigger Design .100 x .100 [2.54 x 2.54] Centerline, End To End Stackable Dual Entry, End Stackable, Low Profile, .100 x .100 [2.54 x 2.54] Centerline, .200 [5.08] Tine Spacing .125±.010
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0001AMPMODU
244252
86016-2 crimp tool
16500-3
1307819
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AMPMODU I
Abstract: amp quality crimping handbook 244252 1-87666-6
Text: AMPMODU Interconnection System Mod IV Receptacle Assemblies, Single-Row, Outrigger Design .100 x .100 [2.54 x 2.54] Centerline, End To End Stackable Dual Entry, End Stackable, Low Profile, .100 x .100 [2.54 x 2.54] Centerline, .200 [5.08] Tine Spacing .125±.010
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000150AMPMODU
AMPMODU I
amp quality crimping handbook
244252
1-87666-6
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326 004 mte
Abstract: 5-147278-1 93 pin connector 534974-4 102387-3 1-87666-6 86016-2 102387-1 534204-5 534974-4 1-102536-1
Text: AMPMODU Interconnection System Mod IV Receptacle Assemblies, Single-Row, Outrigger Design .100 x .100 [2.54 x 2.54] Centerline, End To End Stackable Dual Entry, End Stackable, Low Profile, .100 x .100 [2.54 x 2.54] Centerline, .200 [5.08] Tine Spacing .125±.010
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OVLBB4C7
Abstract: No abstract text available
Text: Round Through-Hole LED Lamp 3 mm OVLBx4C7 Series x x x x High brightness with well-defined spatial radiation patterns UV-resistant epoxy lens Choice of blue, green, red or yellow No stand-offs Each OVLBx4C7 series device is a high-intensity LED mounted in a clear plastic T-1 package. The LED provides
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FDC40
Abstract: No abstract text available
Text: • 40 WATTS OUTPUT POWER • 2:1 WIDE INPUT VOLTAGE RANGE • DESIGN MEET SAFETY STANDARD • SIX-SIDED CONTINUOUS SHIELD • HIGH EFFICIENCY UP TO 90% • STANDARD 3” X 2.6” X 0.4” PACKAGE • FIXED SWITCHING FREQUENCY The FDC40 series offer 40 Watts of output power from a 3 x 2.6 x 0.4 inch package.
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FDC40
36-75VDC.
FDC40
1600VDC
EN60950
UL1950.
200kHz
215kHz
2N7000
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led 3mm
Abstract: 1000PPM
Text: Round Green Through-hole LED Lamp 3mm OVLBG4C7 x x x High Brightness with Well-defined Spatial Radiation Patterns UV-resistant Epoxy Lens Green (525nm) Product Photo Here The OVLBG4C7 is a high-intensity InGaN LED mounted in a clear plastic T-1 package. Its UV-resistant epoxy lens
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525nm)
led 3mm
1000PPM
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MRC D17
Abstract: AT52SC1283J PA30 PA31
Text: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.7V to 1.95V VCC 1.8V to 1.95V for VCCQ and PVCC 128-Mbit Flash Features • 8M x 16 Organization • High Performance • • •
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128-Mbit
32-Mbit
88-ball
MRC D17
AT52SC1283J
PA30
PA31
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MRC D17
Abstract: AT52SC1283J atmel 532 atmel 614
Text: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit/64-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.7V to 1.95V VCC 1.8V to 1.95V for VCCQ and PVCC 128-Mbit Flash Features • 8M x 16 Organization • High Performance •
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128-Mbit
32-Mbit/64-Mbit
88-ball
3530B
MRC D17
AT52SC1283J
atmel 532
atmel 614
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IBM0118180M
Abstract: IBM0118180P1M
Text: Discontinued 9/98 - last order; 3/99 last ship IBM0118180M 1M x 1810/10, 5.0V, LP, SR. IBM0118180P1M x 1810/10, 3.3V, LP, SR. IBM11T4645MP IBM11T8645MP 4M/8M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses
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IBM0118180M
IBM0118180P1M
IBM11T4645MP
IBM11T8645MP
4M/8Mx64
VSS/18VCC
104ns
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Untitled
Abstract: No abstract text available
Text: Round Green Through-Hole LED Lamp 3 mm OVLBG4C7 x x x High brightness with well-defined spatial radiation patterns UV-resistant epoxy lens Green (525 nm) Product Photo Here The OVLBG4C7 is a high-intensity InGaN LED mounted in a clear plastic T-1 package. This LED provides a welldefined and even emission pattern. The UV-resistant epoxy lens makes this device an optimal solution for
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M2200
13-Inch
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cmos power TCP 8108
Abstract: oasis TCP 8108 SST39VF400 jedec mo-142 dd
Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash SST39VF400 Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
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16-Bit)
SST39VF400
cmos power TCP 8108
oasis
TCP 8108
SST39VF400
jedec mo-142 dd
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HS-3530RH
Abstract: No abstract text available
Text: HS-3530RH Low Power, Radiation Hardened Programmable Operational Amplifier December 1992 Pinout Features HS2-3530RH 8 PIN METAL CAN Radiation Environment - Gamma Rate i 1 x 10 RAD (Si)/s - Gamma Dose (y) 1 x 106 RAD (SI) TOP VIEW ISET • Wide Range AC Programming
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HS-3530RH
HS2-3530RH
290um)
HS-3530RH
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rgn 1064
Abstract: RGN2004 RGN1503 UY1N rgn1064 TFK 19 018 rgn 1883 RGN504 TFK 036 GN2004
Text: Type y erw. ff V AB 1 i/ fM AX 1 A X 50 , 298 (A 1 /7 7 (V) AB 1 D+D 0.65 200 2 x 0.8 AB 2 D-D 0.65 200 2 x 0 .8 AX 1 ZW A X 50 ZW 3,75 2x500 AZ 1 ZW 1.1 2x500 2x300 AZ 2 ZW 2 2 X 300 AZ 3 ZW 2 2x350 AZ 4 ZW 2,2 8^500 A Z 11 ZW 1.1 2 a 500 2x300 A Z 12 ZW
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2x500
2x500
2x300
2x350
2x300
rgn 1064
RGN2004
RGN1503
UY1N
rgn1064
TFK 19 018
rgn 1883
RGN504
TFK 036
GN2004
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HS-3530RH
Abstract: No abstract text available
Text: fü HARRIS HS-3530RH S E M I C O N D U C T O R Low Power, Radiation Hardened Programmable Operational Amplifier April 1995 Pinout Features HS2-3530RH 8 PIN METAL CAN TOP VIEW • Radiation Environment - Neutron Fluence 0> 5 x 1012 n/cm2 (E > 10KeV) - Gamma Rate Ci) 1 x 109 RAD (Si)/s
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HS-3530RH
HS2-3530RH
10KeV)
100kHz
MIL-STO-1835,
HS-35
00L1244
HS-3530RH
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HS-3530RH
Abstract: HS5104
Text: HS-3530RH ¡fl H A R R IS S E M I C O N D U C T O R Low Power, Radiation Hardened Program m able Operational Amplifier December 1992 Pinout Features HS2-3530RH 8 PIN METAL CAN TOP VIEW • Radiation Environment - Gamma Rate r 1 x 10* RAD (Siys - Gamma Dose M i x 106 RAD (SI)
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HS-3530RH
HS2-3530RH
100KHz
HS-3530RH
HS-5104RH
x280nm
HS5104
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801r2dn
Abstract: 5530DN 35M4 SML551R3DN 4520D SML902RDN 7516-D 5025DN 4065d SML5085DN
Text: SEM E LA B PLC bOE J> • 0 1 3 3 10 7 □ □ □ 0 5 ‘iE 63^ ■ SHLB 'T - y\ - l ^ ELECTRICAL SPECIFICATIONS FOR SEMELAB MOS POWER 4 DICE MOS POWER DIE SIZE 104 199 X 204 MILS 4 9 / DIE PACK 105 290 X 250 (MILS) 2 5 /D IE PACK 106 254 X 414 (MILS) 6 0 /D IE
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1004RDN
SML904RDN
802R4DN
752R4DN
SML601R3DN
SML551R3DN
49/DIE
SML5085DN
SML4585DN
4065DN
801r2dn
5530DN
35M4
4520D
SML902RDN
7516-D
5025DN
4065d
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Untitled
Abstract: No abstract text available
Text: REV A ORDER INFORMATION 1002 18 X XX X I Plating: APP. NEWDESIGN DATE PERFORMANCE CHARACTERISTIC 1:Tin No. Of Contact Operating Voltage: Current Rating: Contact Resistance: Insulation Resistance: Dielectric Withstanding Voltage: Operating Temperature: Accommodated FFC/FPC Thickness:
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AML20
C1002183XXX
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CHN 949
Abstract: tr/pcb-2-1/TRANSISTOR chn 602
Text: 21Ü 4 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH041_ Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:
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SST31LH041_
CHN 949
tr/pcb-2-1/TRANSISTOR chn 602
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43405 capacitor
Abstract: No abstract text available
Text: m m m E C W Metallized Polyester Capacitor for Motor Running & m S ^ ECWS Series í - 9 Sísfflt a 1 L tz '.m ? -& sz =>>r > ^ - c to 9 7 Á X K ;t° U x x f ; ^ 7 < m m ^x\ » A c o m p a c t, lig h t-w e ig h t c a p a c ito r su ita b le fo r m o to r running. N o n -in d u c tiv e typ e using m e ta llize d p o ly e ste r
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D01137Ã
43405 capacitor
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Untitled
Abstract: No abstract text available
Text: Interconnection Systems Selection Guide Box Contact Connectors 82750 Revised 7-95 .100 [2.54] Centerline Connectors Product Facts Pin header assemblies are available in right-angle, straddle mount and crimp styles • Contacts are on .100 x .100 [2.54 x 2.54] centers
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Ff-352
Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •
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16-Bit)
SST39LH160Q
SST39LH160
SST39LH160Q
Ff-352
Ff352
HE 301
chn 511
CHN 549
chn 440
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