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    WTS IC Search Results

    WTS IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
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    WTS IC Price and Stock

    Seiko Epson Corporation PWT SG-8002CA IC SOCKET

    Programmable Oscillators ADAPTER SOCKET FOR PROM WRITER
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    Mouser Electronics PWT SG-8002CA IC SOCKET 2
    • 1 $106.03
    • 10 $104.3
    • 100 $99.91
    • 1000 $99.91
    • 10000 $99.91
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    Seiko Epson Corporation PWT SG-8504CA IC SOCKET

    Programmable Oscillators ADAPTER SOCKET FOR PROM WRITER
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    Mouser Electronics PWT SG-8504CA IC SOCKET
    • 1 $65.02
    • 10 $61.92
    • 100 $58.82
    • 1000 $58.82
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    Seiko Epson Corporation PWT SG-8506CA/VG7050EAN IC SOCKET

    Programmable Oscillators ADAPTER SOCKET FOR PROM WRITER
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    Mouser Electronics PWT SG-8506CA/VG7050EAN IC SOCKET
    • 1 $65.9
    • 10 $62.49
    • 100 $59.07
    • 1000 $59.07
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    Seiko Epson Corporation PWT SG-8503CA IC SOCKET

    Programmable Oscillators ADAPTER SOCKET FOR PROM WRITER
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    Mouser Electronics PWT SG-8503CA IC SOCKET
    • 1 $66.91
    • 10 $64.24
    • 100 $59.34
    • 1000 $59.34
    • 10000 $59.34
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    Seiko Epson Corporation PWT SG-8002CE IC SOCKET

    Programmable Oscillators ADAPTER SOCKET FOR PROM WRITER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PWT SG-8002CE IC SOCKET
    • 1 $106.03
    • 10 $102.25
    • 100 $100.73
    • 1000 $100.73
    • 10000 $100.73
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    WTS IC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR 166W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166W WTs 1=B UPON INQUIRY Package 2=E 3=C SOT-323


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    OT-323 Nov-26-1996 transistor marking code wts PDF

    WTS-ES701

    Abstract: speach to text 100UF 1N4148 47UF 74LVX244 LT1521-3 MC74HC244ADW WTS701
    Text: Winbond Text-to-Speech Evaluation System User’s Guide April 22, 2003 Version 2.01 Winbond Electronics Corporation America WTS-ES701 2727 N First Street, San Jose, CA 95134 Rev: 2.01 1 The Winbond ES701 Evaluation/Development System is a PC-based system that allows


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    WTS-ES701 ES701 WTS701 WTS-ES701 speach to text 100UF 1N4148 47UF 74LVX244 LT1521-3 MC74HC244ADW PDF

    transistor marking code wts

    Abstract: sot-23 WTs sot-23 marking WTs Q62702-C2339
    Text: BCR 166 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings


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    Q62702-C2339 OT-23 Nov-26-1996 transistor marking code wts sot-23 WTs sot-23 marking WTs Q62702-C2339 PDF

    BCR166W

    Abstract: VSO05561
    Text: BCR166W PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323


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    BCR166W VSO05561 EHA07183 OT323 Nov-29-2001 BCR166W VSO05561 PDF

    VSO05561

    Abstract: No abstract text available
    Text: BCR 166W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 166W WTs Pin Configuration 1=B 2=E Package


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    VSO05561 EHA07183 OT-323 Oct-19-1999 VSO05561 PDF

    BCR166W

    Abstract: VSO05561
    Text: BCR166W PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323


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    BCR166W VSO05561 EHA07183 OT323 Jul-16-2001 BCR166W VSO05561 PDF

    BCR166

    Abstract: No abstract text available
    Text: BCR166 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23


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    BCR166 VPS05161 EHA07183 Jul-16-2001 BCR166 PDF

    BCR166

    Abstract: No abstract text available
    Text: BCR166 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23


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    BCR166 VPS05161 EHA07183 Nov-29-2001 BCR166 PDF

    D882 TO-92

    Abstract: b772 p D882 p D882 J D882 D882 B772 b772 D882 to 92 b772 pnp br d882
    Text: WTS772 WTS882 PNP/NPN Epitaxial Planar Transistors TO-92 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC)


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    WTS772 WTS882 PNP/WTS772 NPN/WTS882 WTS772 WTS882 WTS77 WTS88 D882 TO-92 b772 p D882 p D882 J D882 D882 B772 b772 D882 to 92 b772 pnp br d882 PDF

    BCR166

    Abstract: BCR166F BCR166L3 BCR166T SEMB13 TRANSISTOR wts
    Text: BCR166./SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W SEMB13 C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2


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    BCR166. /SEMB13 BCR166/F/L3 BCR166T/W SEMB13 EHA07183 EHA07173 BCR166 BCR166F BCR166L3 BCR166 BCR166F BCR166L3 BCR166T SEMB13 TRANSISTOR wts PDF

    transistor marking code wts

    Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23


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    47kfl) Q62702-C2339 OT-23 transistor marking code wts sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Instruction sheet 511-3892 instruction sheet A B C Installation Electrical Commissioning Pro&>oeft a putee output the frequency of “ Ti <s pnxKxtiooai to the flow tnrc-jcfi the » A set of four restriction wts suppled , piecf} one o fï*#wtticKmay v.tiich may be


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: WTS'.'3'SH' LS Is ORAM VOD’JLE FAST PAGE MODE DYNAMIC RAM 4M x 8 O 3 ^ 2 M BIT Max. Access Type name time Load memory Outward dimensions Data sheet W x H x D (mm) page (ns) MH4M08B0NJ-6 ★ 60 MH4M08B0NJ-7 ★ 70 M H4M08B0N J-8 ★ 80 M H4M08B0 J A-6 ★


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    MH4M08B0NJ-6 MH4M08B0NJ-7 H4M08B0N H4M08B0 MH4M08B0JA-7 MH4M08B0JA-8 M5M44100BJ MH4M08B0JA-6 33554432-BIT PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT2D48 4 MEG X 8 DRAM MODULE M IC R O N 4 MEG X 8 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 6m W standby; 550mW active, typical


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    MT2D48 30-pin, 550mW 048-cycle 30-Pin A0-A10; A0-A10 PDF

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N □RAM 4 MEG X 8 MT8D48 DRAM MODULE 4 MEG x 8 DRAM _ FAST PAGE MODE (MT8D48 LOW POWER, EXTENDED REFRESH (MT8D48 L) M O D U LE IV IV U U U L . FEATURES OPTIONS DRAM MODULE • Industry standard pinout in a 30-pin single-in-line package • High-performance, CMOS silicon-gate process


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    MT8D48 MT8D48) MT8D48 30-pin 800mW 024-cycle 128ms A0-A10 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 16 MEG X 8 MT8D168 DRAM MODULE 16 MEG x 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 30-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply


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    MT8D168 30-pin 200mW 096-cycle A0-A10; A0-A11 PDF

    T3D19

    Abstract: No abstract text available
    Text: |V|IC =R O N 1 MEG DRAM MODULE 1 MEG X X M T3D19 9 DRAM M O D ULE 9 DRAM FAST-PAGE-MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CMOS silicon-gate process


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    T3D19 MT3D19) MT3D19 30-pin 625mW 024-cycle 128ms MT3D19 T3D19 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 16 MEG DRAM MODULE X MT9D169 9 DRAM MODULE 16 MEG x 9 DRAM FEATURES • Industry standard pinout in a 30-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • All device pins are fully TTL compatible


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    MT9D169 30-pin 475mW 096-cycle A0-A11 MT90I6B PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 4 MEG 4 MEG X MT3D49 9 DRAM MODULE 9 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 30-pin, single-in-line memory m odule • High-performance, CMOS silicon-gate process • Single 5V ±10% pow er supply • Low power, 12mW standby; 775mW active, typical


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    MT3D49 30-pin, 775mW 048-cycle 30-Pin 13S5-ONLY PDF

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N 4 MEG 4 MEG DRAM MODULE X X MT9D49 9 DRAM MODULE 9 DRAM FAST-PAGE-MODE (MT9D49 LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5V ±10% power supply


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    MT9D49 MT9D49) MT9D49 30-pin 025mW 024-cycle 128ms MT9049 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E T> M IC R O N • b l l lS 4tì QD07'ìR0 3 m 4 MEG «URN MT9D49 9 DRAM MODULE X 4 MEG X 9 DRAM DRAM MODULE FAST-PAGE-MODE (MT9D49 LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line


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    MT9D49 MT9D49) MT9D49 30-pin 025mW 024-cycle 128ms MTWJ48 C1993. PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 4 MEG DRAM MODULE MT8D432 32, 8 MEG x 16 DRAM MODULE X 4 MEG x 32, 8 MEG x 16 FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5V ±10% power supply


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    MT8D432 72-pin 200mW 048-cycle DE-24) A0-A11; A0-A11 MTSD432 PDF

    UPD7801

    Abstract: UPD7800 NEC uPD7801 z80 7801 mPD7800 PD7801 PEO-15 D7801 TRM12 T432
    Text: SEC |iPD7800 HIGH END SINGLE CHIP 8-BIT MICROCOMPUTER ROM-LESS DEVELOPMENT DEVICE D E S C R IP T IO N FEATURES The NEC ¿1PD7800 is an advanced 8-b it general purpose single-chip m icrocom puter fabricated w ith N-channel Silicon Gate MOS Technology. Intended as a ROM-less


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    uPD7800 1PD7800 J/PD7801/78Q2 tPD7800 12-bit 80B0A/8085A fiPD7800 PD7B00G 7800DS-REV2-7-83-CAT UPD7801 NEC uPD7801 z80 7801 mPD7800 PD7801 PEO-15 D7801 TRM12 T432 PDF

    WTS 1.7 IC 28 PIN

    Abstract: WTS 1.7 IC
    Text: PRELIMINARY M IC R O N I 4 MEG X 36, 8 MEG 4 MEG DRAM MODULE X X M T12D 436 18 DRAM M OD ULE 36, 8 MEG X 18 FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS M T 1 2 D 4 3 6 D M /G m r r n m r rm m T m SIMM SIM M (gold) SIM M low profile SIM M (gold) low profile


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    72-pin 048-cycle DE-14) DE-18) MT12D436 A0-A10 T12D436 WTS 1.7 IC 28 PIN WTS 1.7 IC PDF