9435sc
Abstract: 9435 WTK9435 diode EB 42A 9435s
Text: WTK9435 Surface Mount P-Channel Enhancement Mode MOSFET 7 -5.3 AMPERES 6 D 3 DRAIN CURRENT D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 5 D 4 G Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V
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WTK9435
WTK9435
300us,
03-May-07
9435sc
9435
diode EB 42A
9435s
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9435sc
Abstract: diode EB 42A WTK9435
Text: WTK9435 DRAIN SOURCE VOLTAGE 6 5 D 4 G -5.3 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V
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WTK9435
WTK9435
300us,
03-May-07
9435sc
diode EB 42A
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9435MSC
Abstract: 9435M
Text: WTK9435M DRAIN SOURCE VOLTAGE 6 5 D 4 G -5.3 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V
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WTK9435M
WTK9435M
13-Mar-07
9435MSC
9435M
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Untitled
Abstract: No abstract text available
Text: WTK9431 Surface Mount P-Channel Enhancement Mode MOSFET 7 -3.5 AMPERES 6 D 3 DRAIN CURRENT D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 5 D 4 G Features: -20 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<130mΩ@V GS = -4.5V * RDS(ON)<180mΩ@V GS = -2.5V
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WTK9431
WTK9431
17-May-07
WTK9435M
13-Mar-07
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