Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    WTC2306 Search Results

    WTC2306 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    WTC2306 Weitron N-Channel Enhancement Mode Power MOSFET Original PDF
    WTC2306A Weitron N-Channel Enhancement Mode Power MOSFET Original PDF

    WTC2306 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n-channel mosfet SOT-23 3a

    Abstract: WTC2306 g2ns
    Text: WTC2306 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 5.3 AMPERS 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90mΩ@V GS =12V *Rugged and Reliable *Capable of 2.5V Gate Drive


    Original     		PDF WTC2306 OT-23 OT-23 Curre1000 13-May-05 n-channel mosfet SOT-23 3a WTC2306 g2ns

    2306a

    Abstract: D26A sot-23 Marking DL WTC2306A
    Text: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement


    Original     		PDF WTC2306A OT-23 OT-23 13-May-05 2306a D26A sot-23 Marking DL WTC2306A

    Untitled

    Abstract: No abstract text available
    Text: WTC2306 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 5.8 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE Features: 2 * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement


    Original     		PDF WTC2306 OT-23 OT-23 08-Apr-2013

    Untitled

    Abstract: No abstract text available
    Text: WTC2306 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 5.3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE * “G” Lead Pb -Free 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90mΩ@V GS =12V *Rugged and Reliable


    Original     		PDF WTC2306 OT-23 OT-23 13-May-05

    5.8A N-CHANNEL MOSFET 25V SOT23

    Abstract: rl27 WTC2306 MOSFET N-Channel 1a vgs 1.2v sot-23 VGEN-10V N06 MOSFET
    Text: WTC2306 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 5.8 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE Features: 2 * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement


    Original     		PDF WTC2306 OT-23 OT-23 17-Aug-09 5.8A N-CHANNEL MOSFET 25V SOT23 rl27 WTC2306 MOSFET N-Channel 1a vgs 1.2v sot-23 VGEN-10V N06 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: WTC2306 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 5.3 AMPERS 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90mΩ@V GS =12V *Rugged and Reliable *Capable of 2.5V Gate Drive


    Original     		PDF WTC2306 SC-59 13-May-05 SC-59 26-Nov-08

    Untitled

    Abstract: No abstract text available
    Text: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement


    Original     		PDF WTC2306A SC-59 SC-59 13-May-05 26-Nov-08

    Untitled

    Abstract: No abstract text available
    Text: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES * “G” Lead Pb -Free DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable


    Original     		PDF WTC2306A OT-23 OT-23 13-May-05