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    WTC2302 Search Results

    WTC2302 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    WTC2302 Weitron N-Channel Enhancement Mode Power MOSFET Original PDF

    WTC2302 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 2.3 AMPERES 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement


    Original
    PDF WTC2302 OT-23 OT-23 24-Aug-09

    Untitled

    Abstract: No abstract text available
    Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive


    Original
    PDF WTC2302 OT-23 OT-23 09-May-05

    WTC2302

    Abstract: No abstract text available
    Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive


    Original
    PDF WTC2302 OT-23 OT-23 09-May-05 WTC2302

    WTC2302

    Abstract: 2302 SOT-23 SOT-23 Marking 2302
    Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive


    Original
    PDF WTC2302 OT-23 OT-23 09-May-05 WTC2302 2302 SOT-23 SOT-23 Marking 2302

    Untitled

    Abstract: No abstract text available
    Text: WTC2302A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive


    Original
    PDF WTC2302A SC-59 SC-59 09-May-05 26-Nov-08

    WTC2302

    Abstract: No abstract text available
    Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 2.3 AMPERES 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement


    Original
    PDF WTC2302 OT-23 OT-23 250uA 24-Aug-09 WTC2302

    WTC2302

    Abstract: WTC2304
    Text: WTC2304 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 2.7 AMPERS P b Lead Pb -Free DRAIN SOUCE VOLTAGE 25 VOLTAGE 1 GATE Features: 2 SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable 1 2 SOT-23


    Original
    PDF WTC2304 OT-23 OT-23 09-May-05 WTC2302 WTC2302 WTC2304