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    WJ W SOT23 Search Results

    WJ W SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    WJ W SOT23 Datasheets Context Search

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    Transistor J310

    Abstract: No abstract text available
    Text: MMBFU310LT1* M AXIM UM RATINGS Rating Symbol Value Unit D r a in -S o u rc e V o lta g e V DS 25 V dc G a te -S o u rc e V o lta g e V GS 25 V dc 'G 10 m Adc Symbol Max Unit PD 225 mW 1.8 m W aC r wJ A 556 °C W T j- T stg - 55 to + 150 CC G a te C u rre n t


    OCR Scan     		MMBFU310LT1* OT-23 O-236AB) Transistor J310 PDF

    JESD22-A114

    Abstract: MMBT2222 VG111 VG111-F VG111-PCB1900 VG111-PCB2100 MOTOROLA TRANSISTOR
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND GND Gain Ctrl GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 25 RF OUT GND 12 24 GND Variable Attenuator GND 13


    Original     		VG111 1-800-WJ1-4401 JESD22-A114 MMBT2222 VG111 VG111-F VG111-PCB1900 VG111-PCB2100 MOTOROLA TRANSISTOR PDF

    Atten25

    Abstract: MOTOROLA TRANSISTOR
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND 5 GND 6 GND Vctrl 7 GND GND 4 3 2 1 GND 8 28 GND GND 9 27 GND Amp GND 10 Superior thermal design allows the product to have a


    Original     		VG111 VG111 1-800-WJ1-4401 Atten25 MOTOROLA TRANSISTOR PDF

    MOTOROLA TRANSISTOR

    Abstract: No abstract text available
    Text: VG111 The Communications Edge TM Product Information PCS/UMTS-band Variable Gain Amplifier GND GND GND 5 GND Gain Ctrl 6 4 3 2 1 28 GND GND 9 27 GND 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 16 17 18 19 20 21 GND GND N/C GND N/C 22 GND


    Original     		VG111 VG111 1-800-WJ1-4401 MOTOROLA TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND 5 GND 6 GND Vctrl 7 GND GND The VG111 is a PCS / UMTS-band high dynamic range variable gain amplifier VGA packaged in a


    Original     		VG111 VG111 1-800-WJ1-4401 PDF

    MOTOROLA TRANSISTOR

    Abstract: 2160 transistor
    Text: VG111 PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND 5 GND 6 GND Gain Ctrl 7 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13


    Original     		VG111 28-pin VG111 J-STD-020 1-800-WJ1-4401 MOTOROLA TRANSISTOR 2160 transistor PDF

    DSA0092069

    Abstract: No abstract text available
    Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND 5 GND 6 GND Vctrl 7 GND GND The VG101 is a cellular-band high dynamic range variable gain amplifier VGA packaged in a low


    Original     		VG101 VG101 1-800-WJ1-4401 DSA0092069 PDF

    MOTOROLA TRANSISTOR

    Abstract: No abstract text available
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND GND Gain Ctrl GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 25 RF OUT GND 12 24 GND Variable Attenuator GND 13


    Original     		VG111 VG111 1-800-WJ1-4401 MOTOROLA TRANSISTOR PDF

    JESD22-A114

    Abstract: MMBT2222 VG101 VG101-F VG101-PCB IN1125 MOTOROLA TRANSISTOR
    Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable


    Original     		VG101 VG101 1-800-WJ1-4401 JESD22-A114 MMBT2222 VG101-F VG101-PCB IN1125 MOTOROLA TRANSISTOR PDF

    MOTOROLA TRANSISTOR

    Abstract: No abstract text available
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND 5 GND 6 GND Vctrl 7 GND GND 4 3 2 1 GND 8 28 GND GND 9 27 GND Amp GND 10 25 RF OUT GND 12 24 GND Variable Attenuator


    Original     		VG111 VG111 1-800-WJ1-4401 MOTOROLA TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable


    Original     		VG101 VG101 1-800-WJ1-4401 PDF

    VG111-PCB1900

    Abstract: MOTOROLA TRANSISTOR JESD22-A114 MMBT2222 VG111 VG111-PCB2100 QFN-6x6 package capacitor 22 pf DNP
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications GND 5 GND 6 GND Vctrl 7 GND GND The VG111 is a PCS / UMTS-band high dynamic range variable gain amplifier VGA packaged in a 6x6 mm surface-mount package. The +22 dBm output


    Original     		VG111 VG111 1-800-WJ1-4401 VG111-PCB1900 MOTOROLA TRANSISTOR JESD22-A114 MMBT2222 VG111-PCB2100 QFN-6x6 package capacitor 22 pf DNP PDF

    VG111-PCB2100

    Abstract: VG111-PCB1900
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND 5 GND 6 GND Gain Ctrl 7 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND


    Original     		VG111 VG111 1-800-WJ1-4401 VG111-PCB2100 VG111-PCB1900 PDF

    MOTOROLA TRANSISTOR

    Abstract: VG111-PCB1900 JESD22-A114 MMBT2222 VG111 VG111-F VG111-PCB2100 variable resistor 47
    Text: VG111 PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND GND 5 GND 6 GND Gain Ctrl 7 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13


    Original     		VG111 1-800-WJ1-4401 MOTOROLA TRANSISTOR VG111-PCB1900 JESD22-A114 MMBT2222 VG111 VG111-F VG111-PCB2100 variable resistor 47 PDF

    Untitled

    Abstract: No abstract text available
    Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable


    Original     		VG101 VG101 1-800-WJ1-4401 PDF

    Atten 850

    Abstract: JESD22-A114 MMBT2222 VG101 VG101-PCB
    Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications GND GND GND Vctrl 5 GND GND 6 4 3 2 1 28 GND GND 9 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 • Xmit & Rcv AGC circuitry for


    Original     		VG101 1-800-WJ1-4401 Atten 850 JESD22-A114 MMBT2222 VG101 VG101-PCB PDF

    MOTOROLA TRANSISTOR

    Abstract: CAPACITOR chip mtbf JESD22-A114 J-STD-020B MMBT2222 VG111 VG111-PCB1900 VG111-PCB2100 wj w sot23 marking code s22 qfn
    Text: VG111 The Communications Edge TM PCS/UMTS-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure 4 GND GND 5 GND Vctrl 6 GND GND 7 3 2 1 GND 8 28 GND GND 9 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND


    Original     		VG111 VG111 JESD22-C101 J-STD-020B 1-800-WJ1-4401 MOTOROLA TRANSISTOR CAPACITOR chip mtbf JESD22-A114 J-STD-020B MMBT2222 VG111-PCB1900 VG111-PCB2100 wj w sot23 marking code s22 qfn PDF

    Untitled

    Abstract: No abstract text available
    Text: VG101 Cellular-band Variable Gain Amplifier Applications • Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 6 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND


    Original     		VG101 VG101 1-800-WJ1-4401 PDF

    4N SOT23

    Abstract: S269-BO
    Text: LS S269-BO YELLOW LY S269-BO GREEN LG S269-BO SIEMENS SUPER-RED SOT23 Low Current Surface Mount LED Lamp P a cka ge D im e n sio n s in Inches m m • 00fi( 15) 0 0 4 ( 09) .117 (fi 0) $ r | 10') {? H) p hb| 2" 30" |c! T ill 1^1 !. '1 M ax. 10 “ M ax


    OCR Scan     		S269-BO S269-BO 1111Mux 4N SOT23 PDF

    VG101-PCB

    Abstract: 6x6 qfn J-STD-020B MMBT2222 VG101 JESD22-A114 MOTOROLA TRANSISTOR 2 stage amplifier "gain control" attenuation
    Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications GND GND GND Vctrl 5 GND GND 6 4 3 2 1 28 GND GND 9 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 • Xmit & Rcv AGC circuitry for


    Original     		VG101 autD22-C101 J-STD-020B 1-800-WJ1-4401 VG101-PCB 6x6 qfn J-STD-020B MMBT2222 VG101 JESD22-A114 MOTOROLA TRANSISTOR 2 stage amplifier "gain control" attenuation PDF

    BCR135

    Abstract: BCR135F BCR135L3 BCR135S BCR135T BCR135W
    Text: BCR135./SEMH9 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		BCR135. BCR135/F/L3 BCR135T/W BCR135S EHA07184 EHA07174 BCR135 BCR135F BCR135L3 BCR135 BCR135F BCR135L3 BCR135S BCR135T BCR135W PDF

    LD6904

    Abstract: No abstract text available
    Text: LD6904 3/5/2008 120mA Negative Voltage Linear Regulator REV: 01 General Description Features The LD6904 is a negative voltage, micropower linear z ±1.5% feedback reference regulator. low-noise, z Shutdown current <1 A low-dropout and low-quiescent current. The precision of


    Original     		LD6904 120mA LD6904 120mA. OT23-6 LD6904-DS-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR135./SEMH9 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		BCR135. BCR135/F/L3 BCR135T/W BCR135S EHA07184 EHA07174 BCR135 BCR135F BCR135L3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3EE D Bi A23b3S0 DGl?GbS 1 H S I P PNP Silicon RF Transistor BFT 92 SIEMENS/ SPCLi SEMICONDS _ • For broadband amplifiers up to 2 G Hz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		A23b3S0 OT-23 aS3b32Q Q0170bà BFT92 PDF