bts 2140 1b data sheet
Abstract: bts 2140 PM7815 digital Pre-distortion PMC-2360 AP603 AP603-PCB2140 WCDMA TRANSCEIVER Signal amplifier wcdma
Text: Application Note WJ High Voltage HBT Performance using Digital Pre-distortion Abstract Presented in this application note are results of an investigation where an AP603 amplifier is linearized using digital pre-distortion DPD . The PALADIN 15 chipset from
|
Original
|
PDF
|
AP603
14GHz,
-41dBc
-63dBc.
AP60x
1-800-WJ1-4401
bts 2140 1b data sheet
bts 2140
PM7815
digital Pre-distortion
PMC-2360
AP603-PCB2140
WCDMA TRANSCEIVER
Signal amplifier wcdma
|
WJ107 relay
Abstract: Wanjia WJ107 relay 6v 10A/125vac WJ107-RELAYS wanjia WJ107 280W IME12
Text: ISSU:2000.7.12 WJ 107 ULTRA-MINIATURE WANJIA WJ107-RELAYS PC BOARD TYPE POWER RELAY Relays for advanced technology • • • • • • Ultra-miniature size with universal footprint High contact capacity: 12A Sealed type available Low coil power consumption
|
Original
|
PDF
|
WJ107-RELAYS
125VAC
28VDC
250V6400
WJ107 relay
Wanjia WJ107
relay 6v 10A/125vac
WJ107-RELAYS
wanjia
WJ107
280W
IME12
|
24VDC 15A 4 POLE RELAY
Abstract: power relay 5A 24vdc 240vac Dongguan Wanjia Relay wanjia
Text: ISSU:2000.7.12 WJ 110 ULTRA-MINIATURE WANJIA WJ110-RELAYS PC BOARD TYPE POWER RELAY Relays for advanced technology • • • • • • Ultra-miniature size with universal footprint High contact capacity: 15A Sealed type available Low coil power consumption
|
Original
|
PDF
|
WJ110-RELAYS
600VA
204VAC
110VDC
24VDC 15A 4 POLE RELAY
power relay 5A 24vdc 240vac
Dongguan Wanjia Relay
wanjia
|
ISO18000-6B
Abstract: passive rfid tags UHF rfid reader 18000-6C EPC64 UCODE EPC 1.19 em reader module tag 89 0X13 LPC2103
Text: RFID UHF Module WJM Series Application Programmer’s Interface API Release 1.0 WJ Communications, Inc. 401 River Oaks Parkway San Jose, CA 95134-1916 Tel: (800) WJ1-4401 Fax: (408) 577-6621 http://www.wj.com DN: 455372 WJM Series API Release 1.0 RFID UHF Module
|
Original
|
PDF
|
WJ1-4401
ISO18000-6B
passive rfid tags
UHF rfid reader
18000-6C
EPC64
UCODE EPC 1.19
em reader module
tag 89
0X13
LPC2103
|
Untitled
Abstract: No abstract text available
Text: WJ VC2001 DRO FOR SONET APPLICATIONS ♦ ♦ ♦ 20 Gbit/s Output Buffer Amplifier Phase Noise –89dBc/Hz Typ. at 10 kHz offset Specifications Guaranteed Characteristics Typical +25ºC 0ºC to +70ºC Frequency 1 @ Tune Voltage 19906.56 19906.56±4 19906.56±8
|
Original
|
PDF
|
VC2001
89dBc/Hz
\WINDOWS\Desktop\VC2001
|
AH103
Abstract: AH103-PCB1750 AH103-PCB1900 AH103-PCB2140 AH103-PCB900 JESD22-A114 NJM78L05 134.2 kHz RFID
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long
|
Original
|
PDF
|
AH103
AH103
IS-95
1-800-WJ1-4401
AH103-PCB1750
AH103-PCB1900
AH103-PCB2140
AH103-PCB900
JESD22-A114
NJM78L05
134.2 kHz RFID
|
Untitled
Abstract: No abstract text available
Text: AH103A The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long
|
Original
|
PDF
|
AH103A
AH103A
1-800-WJ1-4401
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM6926A/D SEMICONDUCTOR TECHNICAL DATA MCM6926A Advance Information 128K x 8 Bit Fast Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 857A–02 Freescale Semiconductor, Inc. The MCM6926A is a 1,048,576 bit static random access memory organized
|
Original
|
PDF
|
MCM6926A/D
MCM6926A
MCM6926A
|
Untitled
Abstract: No abstract text available
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long
|
Original
|
PDF
|
AH103
AH103
1-800-WJ1-4401
|
Untitled
Abstract: No abstract text available
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long
|
Original
|
PDF
|
AH103
AH103
1-800-WJ1-4401
|
Untitled
Abstract: No abstract text available
Text: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description Applications • Mobile Infrastructure • W-LAN / ISM / RFID • MDS / MMDS Infrastructure The device conforms to WJ Communications’ long
|
Original
|
PDF
|
AH103
AH103
minimum61
1-800-WJ1-4401
|
T12F
Abstract: AL 2450 dv EUPEC T 760 S101 T1052 T60F EUPEC T 821 EUPEC tt 25 N 12 EUPEC TT 66 n 12 EUPEC tt 66 N 16
Text: Fast thyristors •trmsm 1 Type 4TE D It s m / ¡ 2dt • It a v m ^ 34Q35T7 c V TO it DOOOlOfci TaT ■ UPEC EUPE (di/dt)cr (dv/dt)cr Vgt Ig t Rthjc tvj max Outline 1 > ■ T 12 F A 10 ms, 10 ms, 180 °el tv, DIN DIN Wj = tv j Wj max tv| max sin. tvj max
|
OCR Scan
|
PDF
|
T1052
T1078
T12F
AL 2450 dv
EUPEC T 760
S101
T60F
EUPEC T 821
EUPEC tt 25 N 12
EUPEC TT 66 n 12
EUPEC tt 66 N 16
|
CA-180
Abstract: WJ-CA18
Text: WJ-A18Q/SMA180 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH REVERSE ISOLATION: 22 dB TYP. ♦ HIGH OUTPUT POWER: +18 dBm (TYP.) Outline Drawings Specifications* Characteristics Frequency (Min.) Small Signal Gain (Min.)
|
OCR Scan
|
PDF
|
WJ-A18Q/SMA180
DIME10
CA-180
WJ-CA18
|
WJ-CA70
Abstract: No abstract text available
Text: WJ-A701SMA70 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ VERY LOW NOISE: 1.8 dB TYP. ♦ HIGH EFFICIENCY: +8.5 dBm (TYP.) OUTPUT POWER @ 10 mA (TYP.) Outline Drawings Specifications* Characteristics A70 Typical 0.450 D (11.41)U
|
OCR Scan
|
PDF
|
WJ-A701SMA70
DIMENSION01
WJ-CA70
|
|
|
transistor 45 f 123
Abstract: si3300
Text: WJ-A43 / SMA43 100 to 3200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 100-3200 MHz EXCELLENT GAIN BLOCK: 11.5 dB TYP. MEDIUM OUTPUT LEVEL: +8.5 dBm (TYP.) Outline Drawings A43 Specifications* 0.450 D (11.41)°
|
OCR Scan
|
PDF
|
WJ-A43
SMA43
transistor 45 f 123
si3300
|
Transistor BC 227
Abstract: No abstract text available
Text: WJ-A89 / SMA89 100 to 800 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 29 dB TYP. LOW INPUT VSWR: 1.4:1 (TYP.) HIGH LEVEL OUTPUT: +17.5 dBm (TYP.) Outline Drawings Specifications5* A89 Typical Characteristics
|
OCR Scan
|
PDF
|
WJ-A89
SMA89
50-ohm
DD071flfi
Transistor BC 227
|
WJ-A35-1
Abstract: WJ-CA35-1
Text: WJ-A35-1 / SMA35-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRA WIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +9.5 dBm (TYP.) Outline Drawings A35-1 Specifications 0.200 (5.08) Guaranteed Typical Characteristics
|
OCR Scan
|
PDF
|
WJ-A35-1
SMA35-1
A35-1
WJ-CA35-1
|
Untitled
Abstract: No abstract text available
Text: WJ-LA45 / SMLA45 1000 to 4000 MHz TO-8 CASCADABLE LIMITING AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ SYMMETRICAL CLIPPING: GOOD EVEN ORDER SUPPRESSION ♦ MEDIUM OUTPUT LEVEL: +14.0 dBm TYP. ♦ MEDIUM GAIN: 11.5 dB (TYP.) ♦ WIDE BANDWIDTH: 0.8-4.2 GHz (TYP)
|
OCR Scan
|
PDF
|
WJ-LA45
SMLA45
|
Untitled
Abstract: No abstract text available
Text: WJ-RA62/SMRA62 2000 to 6000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 1.5-6.2 GHz TYP. MEDIUM GAIN: 16.0 dB (TYP.) MEDIUM OUTPUT POWER: +13.0 dBm (TYP.) LOW NOISE FIGURE: 4.0 dB (TYP.) Outline Drawings
|
OCR Scan
|
PDF
|
WJ-RA62/SMRA62
50-ohm
|
WJ-LA7
Abstract: 0113B
Text: WJ-LA7/ SMLA7 50 to 500 MHz TO-8 CASCADABLE LIMITING AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ SYMMETRICAL CLIPPING, GOOD EVEN-ORDER SUPPRESSION ♦ HIGH OUTPUT LEVEL: +11.5 dBm TYP. ♦ HIGH THIRD-ORDER INTERCEPT POINT: +28 dBm (TYP.) ♦ FAST PULSE RECOVERY TIME: <50 NSEC
|
OCR Scan
|
PDF
|
50-OHM
WJ-LA7
0113B
|
WJ-A19-1
Abstract: WJ-CA19-1 WJA19
Text: WJ-A19-1 /SMA19-1 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22.5 dBm TYP. HIGH THIRD ORDER IP. +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Outline Drawings A19-1 0.200 (5.06) Specifications
|
OCR Scan
|
PDF
|
WJ-A19-1
/SMA19-1
A19-1
50-ohm
0007QQti
WJ-CA19-1
WJA19
|
SMA38
Abstract: transistor DB 42A WJ-A38
Text: WJ-A38 / SMA38 10 to 2000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +19 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) WIDE BANDWIDTH: 10-2000 MHz Outline Drawings Specifications * A38 Typical Characteristics
|
OCR Scan
|
PDF
|
WJ-A38
SMA38
SMA38
transistor DB 42A
|
WJ-CA70-1
Abstract: No abstract text available
Text: WJ-A70-1 / SMA70-1 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ LOW NOISE: 1.8 dB TYP. ♦ HIGH EFFICIENCY: +14 dBm (TYP.) OUTPUT POWER @ 15 mA (TYP.) Outline Drawings A70-1 Specifications* 0.200 (5.08) Typical Characteristics
|
OCR Scan
|
PDF
|
WJ-A70-1
SMA70-1
A70-1
WJ-CA70-1
|
WJ-CA45-1
Abstract: WJ-CA45 wja45 wj-a45
Text: WJ-A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Outline Drawings A 45-1 Specifications" Characteristics 0.200 (5.08) Guaranteed
|
OCR Scan
|
PDF
|
WJ-A45-1
SMA45-1
WJ-CA45-1
WJ-CA45
wja45
wj-a45
|
