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    WJ 60 TRANSISTOR Search Results

    WJ 60 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    WJ 60 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WJ 60 transistor

    Abstract: WJ transistor AP601 power amplifier s band ghz mhz AP601-PCB880
    Text: Application Note AP601 880 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP601 AP601-PCB880 1-800-WJ1-4401 WJ 60 transistor WJ transistor power amplifier s band ghz mhz

    WJ 60 transistor

    Abstract: WJ transistor ap601 AP601-PCB1960
    Text: Application Note AP601 1960 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP601 AP601-PCB1960 64DPCH, 1930MHz 1-800-WJ1-4401 WJ 60 transistor WJ transistor

    AP603

    Abstract: AP602 shunt r unconditionally stable transistor high gain 2.4 ghz WJ 60 transistor RF power amplifier MHz
    Text: Application Note AP603 1960 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP603 160mA 1-800-WJ1-4401 AP602 shunt r unconditionally stable transistor high gain 2.4 ghz WJ 60 transistor RF power amplifier MHz

    AP602

    Abstract: WJ 58 transistor WJ 60 transistor
    Text: Application Note AP602 880 MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP602 consid25oC PCB880 64DPCH 84MHz AP602 1-800-WJ1-4401 WJ 58 transistor WJ 60 transistor

    WJ 58 transistor

    Abstract: AP603
    Text: Application Note AP603 940 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP603 64DPCH 84MHz AP603, AP603 1-800-WJ1-4401 WJ 58 transistor

    AP602

    Abstract: No abstract text available
    Text: Application Note AP602 2010 - 2025MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP602 2025MHz 2025MHz 28MHz 2010MHz AP602. 1-800-WJ1-4401

    131-6 wj

    Abstract: 131-6 wj 64 131-6 wj 60 AP603 WJ 60 transistor
    Text: Application Note AP603 2140 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP603 AP603, 1-800-WJ1-4401 131-6 wj 131-6 wj 64 131-6 wj 60 WJ 60 transistor

    AP602

    Abstract: No abstract text available
    Text: Application Note AP602 1930 - 1990 MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP602 1990MHz 84MHz AP602. 1-800-WJ1-4401

    AP603

    Abstract: transistor 6c x 4401 transistor
    Text: Application Note AP603 2015 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP603 2016MHz AP603, AP603 1-800-WJ1-4401 transistor 6c x 4401 transistor

    AP601

    Abstract: No abstract text available
    Text: Application Note AP601 900 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP601 PCB900 AP601, 1-800-WJ1-4401

    AP603

    Abstract: No abstract text available
    Text: Application Note AP603 880 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP603 880MHz AP603, 1-800-WJ1-4401

    AP601

    Abstract: No abstract text available
    Text: Application Note AP601 940 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP601 PCB900 AP601, 1-800-WJ1-4401

    FP1189

    Abstract: 8893 application diagram
    Text: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401 8893 application diagram

    fp21g

    Abstract: fp2189-g wj model marking code FP2189 FP2189-PCB1900S ML200D EL11-8 Fp2189
    Text: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401 fp21g fp2189-g wj model marking code FP2189 FP2189-PCB1900S ML200D EL11-8

    SOT89 MARKING CODE 8G

    Abstract: g4bc fp2189-G fp21-g marking code 85Z Fp2189 wj model marking code FP2189 FP21G transistor C1000 Y MARKING C14 85Z
    Text: FP2189 The Communications Edge TM Product Information 1-Watt HFET Product Features x x x x x x 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Applications


    Original     		PDF FP2189 OT-89 FP2189 10istance, 1-800-WJ1-4401 SOT89 MARKING CODE 8G g4bc fp2189-G fp21-g marking code 85Z wj model marking code FP2189 FP21G transistor C1000 Y MARKING C14 85Z

    fp21g

    Abstract: fp21-g MARKING CODE 51 5 fet sot-89 fp-21g FP2189 FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking code transistor ROHM
    Text: FP2189 1-Watt HFET Product Features • • • • • • Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Applications •


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401 fp21g fp21-g MARKING CODE 51 5 fet sot-89 fp-21g FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking code transistor ROHM

    C18pF

    Abstract: Fp2189
    Text: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Description Functional Diagram The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401 C18pF

    FP21G

    Abstract: MARKING CODE 51 5 fet sot-89 FP2189 FP2189-G FP2189G MARKING CODE SOT-89 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89
    Text: FP2189 1 - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain


    Original     		PDF FP2189 FP2189 OT-89 WJ1-4401 FP21G MARKING CODE 51 5 fet sot-89 FP2189-G FP2189G MARKING CODE SOT-89 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89

    marking 08 sot89

    Abstract: SOT89 MARKING CODE 8G
    Text: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401 marking 08 sot89 SOT89 MARKING CODE 8G

    Fp2189

    Abstract: No abstract text available
    Text: FP2189 1 - Watt HFET Product Information Product Features • • • • • • • • 50 – 4000 MHz ISO & EPC compliant +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package Functional Diagram


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401

    umt1n applications

    Abstract: fp2189-G GETEK Fp2189
    Text: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401 umt1n applications fp2189-G GETEK

    FP21G

    Abstract: FP2189-G FP2189 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89 fp21-g marking code transistor ROHM rf transistor 6ghz 1w
    Text: FP2189 The Communications Edge TM Product Information 1-Watt HFET Product Features Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years


    Original     		PDF FP2189 OT-89 FP2189 1-800-WJ1-4401 FP21G FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89 fp21-g marking code transistor ROHM rf transistor 6ghz 1w

    Untitled

    Abstract: No abstract text available
    Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401

    csc2003

    Abstract: CSC2003M CSC2002M CSC2003K CSC2003L CSC2120 CSC2120Y CSC2216 CSC2229Y CSC2240
    Text: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. CSC2002M Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO V CEO ^EBO (V) (V) (V) Po (WJ Min Min Min @Tc=25°a 60 60 5 0.5 *CBO (A) 0.3 Vc *CES ^CE (pA) (V) (pA) 8 (V)


    OCR Scan     		PDF CSC2002M O-92-1 CSC2003 CSC2003K CSC2003M CSC2003L CSC2120 CSC2120Y CSC2216 CSC2229Y CSC2240