WJ 60 transistor
Abstract: WJ transistor AP601 power amplifier s band ghz mhz AP601-PCB880
Text: Application Note AP601 880 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP601
AP601-PCB880
1-800-WJ1-4401
WJ 60 transistor
WJ transistor
power amplifier s band ghz mhz
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WJ 60 transistor
Abstract: WJ transistor ap601 AP601-PCB1960
Text: Application Note AP601 1960 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP601
AP601-PCB1960
64DPCH,
1930MHz
1-800-WJ1-4401
WJ 60 transistor
WJ transistor
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AP603
Abstract: AP602 shunt r unconditionally stable transistor high gain 2.4 ghz WJ 60 transistor RF power amplifier MHz
Text: Application Note AP603 1960 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP603
160mA
1-800-WJ1-4401
AP602
shunt r
unconditionally stable transistor high gain 2.4 ghz
WJ 60 transistor
RF power amplifier MHz
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AP602
Abstract: WJ 58 transistor WJ 60 transistor
Text: Application Note AP602 880 MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP602
consid25oC
PCB880
64DPCH
84MHz
AP602
1-800-WJ1-4401
WJ 58 transistor
WJ 60 transistor
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WJ 58 transistor
Abstract: AP603
Text: Application Note AP603 940 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP603
64DPCH
84MHz
AP603,
AP603
1-800-WJ1-4401
WJ 58 transistor
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AP602
Abstract: No abstract text available
Text: Application Note AP602 2010 - 2025MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP602
2025MHz
2025MHz
28MHz
2010MHz
AP602.
1-800-WJ1-4401
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131-6 wj
Abstract: 131-6 wj 64 131-6 wj 60 AP603 WJ 60 transistor
Text: Application Note AP603 2140 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP603
AP603,
1-800-WJ1-4401
131-6 wj
131-6 wj 64
131-6 wj 60
WJ 60 transistor
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AP602
Abstract: No abstract text available
Text: Application Note AP602 1930 - 1990 MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP602
1990MHz
84MHz
AP602.
1-800-WJ1-4401
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AP603
Abstract: transistor 6c x 4401 transistor
Text: Application Note AP603 2015 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP603
2016MHz
AP603,
AP603
1-800-WJ1-4401
transistor 6c x
4401 transistor
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AP601
Abstract: No abstract text available
Text: Application Note AP601 900 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP601
PCB900
AP601,
1-800-WJ1-4401
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AP603
Abstract: No abstract text available
Text: Application Note AP603 880 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP603
880MHz
AP603,
1-800-WJ1-4401
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AP601
Abstract: No abstract text available
Text: Application Note AP601 940 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP601
PCB900
AP601,
1-800-WJ1-4401
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FP1189
Abstract: 8893 application diagram
Text: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package
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FP1189
OT-89
FP1189
1-800-WJ1-4401
8893 application diagram
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fp21g
Abstract: fp2189-g wj model marking code FP2189 FP2189-PCB1900S ML200D EL11-8 Fp2189
Text: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years
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FP2189
OT-89
FP2189
1-800-WJ1-4401
fp21g
fp2189-g
wj model marking code FP2189
FP2189-PCB1900S
ML200D
EL11-8
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SOT89 MARKING CODE 8G
Abstract: g4bc fp2189-G fp21-g marking code 85Z Fp2189 wj model marking code FP2189 FP21G transistor C1000 Y MARKING C14 85Z
Text: FP2189 The Communications Edge TM Product Information 1-Watt HFET Product Features x x x x x x 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Applications
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FP2189
OT-89
FP2189
10istance,
1-800-WJ1-4401
SOT89 MARKING CODE 8G
g4bc
fp2189-G
fp21-g
marking code 85Z
wj model marking code FP2189
FP21G
transistor C1000 Y
MARKING C14 85Z
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fp21g
Abstract: fp21-g MARKING CODE 51 5 fet sot-89 fp-21g FP2189 FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking code transistor ROHM
Text: FP2189 1-Watt HFET Product Features • • • • • • Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Applications •
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FP2189
OT-89
FP2189
1-800-WJ1-4401
fp21g
fp21-g
MARKING CODE 51 5 fet sot-89
fp-21g
FP2189-G
FP2189-PCB1900S
FP2189-PCB2140S
FP2189-PCB900S
marking code transistor ROHM
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C18pF
Abstract: Fp2189
Text: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Description Functional Diagram The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm
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FP2189
OT-89
FP2189
1-800-WJ1-4401
C18pF
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FP21G
Abstract: MARKING CODE 51 5 fet sot-89 FP2189 FP2189-G FP2189G MARKING CODE SOT-89 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89
Text: FP2189 1 - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain
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FP2189
FP2189
OT-89
WJ1-4401
FP21G
MARKING CODE 51 5 fet sot-89
FP2189-G
FP2189G
MARKING CODE SOT-89
FP2189-PCB1900S
FP2189-PCB2140S
FP2189-PCB900S
marking c7 sot-89
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marking 08 sot89
Abstract: SOT89 MARKING CODE 8G
Text: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram
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FP1189
OT-89
FP1189
1-800-WJ1-4401
marking 08 sot89
SOT89 MARKING CODE 8G
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Fp2189
Abstract: No abstract text available
Text: FP2189 1 - Watt HFET Product Information Product Features • • • • • • • • 50 – 4000 MHz ISO & EPC compliant +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package Functional Diagram
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FP2189
OT-89
FP2189
1-800-WJ1-4401
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umt1n applications
Abstract: fp2189-G GETEK Fp2189
Text: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years
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FP2189
OT-89
FP2189
1-800-WJ1-4401
umt1n applications
fp2189-G
GETEK
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FP21G
Abstract: FP2189-G FP2189 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89 fp21-g marking code transistor ROHM rf transistor 6ghz 1w
Text: FP2189 The Communications Edge TM Product Information 1-Watt HFET Product Features Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years
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FP2189
OT-89
FP2189
1-800-WJ1-4401
FP21G
FP2189-G
FP2189-PCB1900S
FP2189-PCB2140S
FP2189-PCB900S
marking c7 sot-89
fp21-g
marking code transistor ROHM
rf transistor 6ghz 1w
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Untitled
Abstract: No abstract text available
Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET
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FP1189
OT-89
FP1189
1-800-WJ1-4401
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csc2003
Abstract: CSC2003M CSC2002M CSC2003K CSC2003L CSC2120 CSC2120Y CSC2216 CSC2229Y CSC2240
Text: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. CSC2002M Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO V CEO ^EBO (V) (V) (V) Po (WJ Min Min Min @Tc=25°a 60 60 5 0.5 *CBO (A) 0.3 Vc *CES ^CE (pA) (V) (pA) 8 (V)
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CSC2002M
O-92-1
CSC2003
CSC2003K
CSC2003M
CSC2003L
CSC2120
CSC2120Y
CSC2216
CSC2229Y
CSC2240
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