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    WJ 58 TRANSISTOR Search Results

    WJ 58 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    WJ 58 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AP602

    Abstract: WJ 58 transistor WJ 60 transistor
    Text: Application Note AP602 880 MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP602 consid25oC PCB880 64DPCH 84MHz AP602 1-800-WJ1-4401 WJ 58 transistor WJ 60 transistor

    WJ 58 transistor

    Abstract: AP603
    Text: Application Note AP603 940 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the


    Original     		PDF AP603 64DPCH 84MHz AP603, AP603 1-800-WJ1-4401 WJ 58 transistor

    Untitled

    Abstract: No abstract text available
    Text: FZ 600 R 06 KF 3 Transistor Transistor Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,057 RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 600 A RthCK VcES le c/w pro Baustein / per module


    OCR Scan     		PDF 0002G2Ã

    WJ-CA80-1

    Abstract: WJ-A80 Transistor BC 227
    Text: uuU A80-1 / SMA80-1 10 to 200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >32 dB TYP. VERY LOW NOISE: 2.0 dB (TYP.) HIGH GAIN: 27.3 dB (TYP.) HIGH EFFICIENCY: 29 mA at 15 VOLTS (TYP.) Outline Drawings


    OCR Scan     		PDF A80-1 SMA80-1 A80-1 1-800-WJ1-4401 WJ-CA80-1 WJ-A80 Transistor BC 227

    AMPLIFIER 1800w

    Abstract: WJ 58 transistor WJ catalog WJ 83
    Text: u j U LA45-1 / SMLA45-1 1000 to 4000 MHz TO-8 CASCADABLE LIMITING AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ SYMMETRICAL CLIPPING: GOOD EVEN ORDER SUPPRESSION ♦ HIGH OUTPUT LEVEL: +17 dBm TYP. ♦ MEDIUM GAIN: 14.0 dB (TYP.) ♦ WIDE BANDWIDTH: 0.8-4.2 GHz (TYP.)


    OCR Scan     		PDF LA45-1 SMLA45-1 LA45-1 MIL-STD-202 STD-105 J1-4401 AMPLIFIER 1800w WJ 58 transistor WJ catalog WJ 83

    transistor UN 4215

    Abstract: 421-5 MAG WJA8 WJ-A87 ATIC 107 443-1 MAG BC 170c transistor 10516
    Text: U j J A 8 7 / S M A 8 7 10 to 400 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT LEVEL: +17.5 dBm TYP. HIGH THIRD ORDER I.P.: +33 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Outline Drawings A87 Specifications


    OCR Scan     		PDF 1-800-WJ1-4401 transistor UN 4215 421-5 MAG WJA8 WJ-A87 ATIC 107 443-1 MAG BC 170c transistor 10516

    wj a58

    Abstract: No abstract text available
    Text: u j U A58/SMA58 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH DYNAMIC RANGE: +116 dBm 1 MHz BAND ♦ HIGH OUTPUT POWER: +19 dBm (TYP.) ♦ HIGH THIRD ORDER I.P.: +34 dBm (TYP.) ♦ LOW NOISE: 4.0 dB (TYP.) Outline Drawings


    OCR Scan     		PDF A58/SMA58 50-ohm 1-800-WJ1-4401 wj a58

    TRANSISTOR BC 158

    Abstract: transistor BC 157 BC 148 transistor WJ-A35 transistor BC 154
    Text: uud A35/SMA35 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +9 dBm TYP. ♦ WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Outline Drawings A35 Specifications* 0.450 r, (1U1) U 0 200 (5.06) Characteristics Frequency (Min.)


    OCR Scan     		PDF A35/SMA35 1-800-WJ1-4401 TRANSISTOR BC 158 transistor BC 157 BC 148 transistor WJ-A35 transistor BC 154

    transistor c375

    Abstract: WJ-CA28 WJ-A28 transistor BC 176 transistor bc 248 WJA28
    Text: u jU A28/SMA28 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +29 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 T O +15 VOLTS Outline Drawings A28 Specifications’* ~ » 0 1 8 ÌS » 4 6 » ° .0 2 > D IA .


    OCR Scan     		PDF A28/SMA28 1-800-WJ1 transistor c375 WJ-CA28 WJ-A28 transistor BC 176 transistor bc 248 WJA28

    WJ-A26

    Abstract: transistor bc 207 WJ-CA26 m 9669 transistor Bc 287 WJA26
    Text: u j U A26/SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: <1.4:1 (TYP.) Outline Drawings A26 Specifications* Characteristics Frequency (Min.)


    OCR Scan     		PDF A26/SMA26 1-800-WJ1-4401 WJ-A26 transistor bc 207 WJ-CA26 m 9669 transistor Bc 287 WJA26

    transistor c 5586

    Abstract: 0103 MA WJ 73 transistor 5586 A0611 0103 MA WJ 64 CA0611 transistor BC 171
    Text: uuU A0611 / SMA0611 5 to 600 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ LOW NOISE FIGURE: 3.2 dB TYP. ♦ HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc ♦ HIGH OUTPUT POWER: +12.5 dBm (TYP.) Outline Drawings Specifications* Characteristics


    OCR Scan     		PDF A0611 SMA0611 1-800-WJ1-4401 transistor c 5586 0103 MA WJ 73 transistor 5586 0103 MA WJ 64 CA0611 transistor BC 171

    WJ-LA7

    Abstract: No abstract text available
    Text: uuU LA7 / SMLA7 50 to 500 MHz TO-8 CASCAD ABLE LIMITING AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ SYMMETRICAL CLIPPING, GOOD EVEN-ORDER SUPPRESSION ♦ HIGH OUTPUT LEVEL: +11.5 dBm TYP. ♦ HIGH THIRD-ORDER INTERCEPT POINT: +28 dBm (TYP.) ♦ FAST PULSE RECOVERY TIME: <50 NSEC (TYP)


    OCR Scan     		PDF 50-ohm 1-800-WJ1-4401 WJ-LA7

    WJ A39

    Abstract: No abstract text available
    Text: uuU A39/SMA39 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22 dBm TYP. HIGH THIRD ORDER I.P.: +34 dBm (TYP) WIDE BANDWIDTH: 10-2000 MHz Outline Drawings Specifications A39 Characteristics Frequency (Min.)


    OCR Scan     		PDF A39/SMA39 50-ohm 1-800-WJ1-4401 WJ A39

    WJ-A63

    Abstract: bc 162 transistor Transistor BC 227 WJ-CA63 wjca63
    Text: uuJ A63 / SMA63 5 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. MEDIUM THIRD ORDER I.R: +15 dBm (TYP.) HIGH GAIN: 16 dB (TYR) • ¡■ B B lM g g » » miKKKtM Specifications* Characteristics Outline Drawings


    OCR Scan     		PDF SMA63 1-800-WJ1-4401 WJ-A63 bc 162 transistor Transistor BC 227 WJ-CA63 wjca63

    WJ-CA19-1

    Abstract: No abstract text available
    Text: uuU A19-1 /SMA19-1 W M BM KKm 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22.5 dBm TYP. HIGH THIRD ORDER I.P. +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Outline Drawings A19-1 Specifications


    OCR Scan     		PDF A19-1 /SMA19-1 A19-1 50-ohm WJ-CA19-1 WJ-A19-1 J1-4401

    WJ-CA70-2

    Abstract: WJ-CA70 WJA7 transistor rf m 2528 WJ-A70-2
    Text: u u U A70-2 / SMA70-2 •H 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 2.2 dB TYP. HIGH OUTPUT POWER: +19 dBm (TYP.) HIGH THIRD ORDER IP: +38 dBm (TYP) LOW DC CURRENT: 25 mA (TYP) @ +15 Vdc Outline Drawings


    OCR Scan     		PDF A70-2 SMA70-2 50-OHM 1-800-WJ1-4401 WJ-CA70-2 WJ-CA70 WJA7 transistor rf m 2528 WJ-A70-2

    62792

    Abstract: 300/SCR 131- 6 WJ 66
    Text: uuU RA66 / SMRA66 10 to 1000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - THREE STAGES: 37.0 dB TYP. LOW NOISE: <3.5 dB (TYP.) MEDIUM OUTPUT LEVEL: > +15.5 dBm (TYP.) HIGH REVERSE ISOLATION: >50 dB (TYP) Outline Drawings


    OCR Scan     		PDF SMRA66 018-OCO2 VSW354 1-800-WJ1-4401 62792 300/SCR 131- 6 WJ 66

    TRANSISTOR C460

    Abstract: c460 transistor wj a74
    Text: uuJ A74/SMA74 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 30.0 dB TYP. MEDIUM OUTPUT LEVEL: +8.5 dBm (TYP.) WIDE POWER SUPPLY RANGE: +8 T O +15 VOLTS ♦ LOW VSWR: <1.3:1 (TYP.) Outline Drawings


    OCR Scan     		PDF A74/SMA74 50-ohm 1-800-WJ1-4401 TRANSISTOR C460 c460 transistor wj a74

    WJ-CA37

    Abstract: bc 162 transistor WJ-A37
    Text: uuU A37 / SMA37 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +28 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Outline Drawings A 37 Specifications* 0 200


    OCR Scan     		PDF SMA37 50-ohm WJ-CA37 WJ-A37 1-800-WJ1-4401 bc 162 transistor

    pe 5571

    Abstract: transistor BC 147 BC 148 TRANSISTOR CA211 WJ-A21-1 bc 147 transistor bc 103 transistor transistor BC 171 WJA21
    Text: uuU A21-1 /SMA21-1 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: < 2.8 dB TYP. LOW VSWR: 1.5:1 (TYP.) HIGH SINGLE STAGE GAIN: 15 dB (TYP.) Outline Drawings A21-1 Specifications* C200 (5.08) Characteristics


    OCR Scan     		PDF A21-1 /SMA21-1 A21-1 50-QHM 50-ohm 1-800-WJ1-4401 pe 5571 transistor BC 147 BC 148 TRANSISTOR CA211 WJ-A21-1 bc 147 transistor bc 103 transistor transistor BC 171 WJA21

    bc 2878 transistor

    Abstract: WJ A38 WJ-PA38 transistor BC 157 transistor K 2937 bc 2878 transistor bc 146
    Text: uuU PA38-2/ SMPA38-2 200 to 2600 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 200-2800 MHz TYP. HIGH OUTPUT LEVEL: +23.5 dBm (TYP.) GaAs FET AMPLIFIER HIGH THIRD ORDER INTERCEPT POINT: +33 dBm (TYP.) Outline Drawings


    OCR Scan     		PDF PA38-2/ SMPA38-2 PA38-2 J1-4401 bc 2878 transistor WJ A38 WJ-PA38 transistor BC 157 transistor K 2937 bc 2878 transistor bc 146

    WJ-A77

    Abstract: WJ-CA77
    Text: u u U A77/SMA77 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 16.5 dB TYP. HIGH OUTPUT LEVEL: +16.5 dBm (TYP.) HIGH THIRD ORDER I.P.: +30 dBm (TYP.) LOW VSWR: 1.3:1 (TYP.) Outline Drawings A77 Specifications *


    OCR Scan     		PDF A77/SMA77 1Q08C 1009C J1-4401 WJ-A77 WJ-CA77

    Untitled

    Abstract: No abstract text available
    Text: uuU RA46 / SMRA46 1000 to 4000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 0.8-4.2 GHz TYR HIGH GAIN: 25.5 dB (TYR) HIGH OUTPUT POWER: +19.0 dBm (TYR) LOW NOISE: 4.5 dB (TYR) Outline Drawings RA46 Specifications*


    OCR Scan     		PDF SMRA46

    WJA75

    Abstract: WJ-A75 wj a75 bc 459 transistor transistor BC 8050 ATIC 164 D2 w-ja75
    Text: u u U A75 / SMA75 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 21.0 dB TYP. LOW NOISE: 2.1 dB (TYP.) MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +20 VOLTS Outline Drawings A75 Specifications*


    OCR Scan     		PDF SMA75 1-800-WJ1-4401 WJA75 WJ-A75 wj a75 bc 459 transistor transistor BC 8050 ATIC 164 D2 w-ja75