4555B
Abstract: SSOP16 T0790 T0790-6C
Text: Features • • • • • • • • • • • 700 MHz to 2700 MHz Operating Frequency Very Low Noise Floor Performance Very Good Sideband and Carrier Suppression Supports Wideband Baseband Input Very High Linearity Very Low LO Leakage 50 Ω Impedance on RF and LO Port
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SSOP16
GSM/TDMA/CDMA2000/W-CDMA/UMTS/ISM
T0790
T0790
4555B
T0790-6C
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VCO 500MHz-1000MHz
Abstract: balun tc1-1-13m TC4-19 balun transformer RFMD RF2053 Matching Transformer - line matching transformed rf2052 transformer calculator RF2051 tutorial transformer
Text: AN RFMD REFERENCE MANUAL An RF205x Family Application Note Matching Circuits and Baluns RFMD Multi-Market Products Group RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity , PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
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RF205x
VCO 500MHz-1000MHz
balun tc1-1-13m
TC4-19
balun transformer
RFMD RF2053
Matching Transformer - line matching transformed
rf2052
transformer calculator
RF2051
tutorial transformer
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MMIC marking code SC
Abstract: BGM1013 MLG1608 SMD INDUCTOR 100 rf mmic marking code 09 SOT363
Text: BGM1013 MMIC wideband amplifier Rev. 04 — 1 May 2006 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
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BGM1013
OT363
BGM1013
MMIC marking code SC
MLG1608
SMD INDUCTOR 100
rf mmic marking code 09 SOT363
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J5001
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 3, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage
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MW6IC2240N
MW6IC2240NBR1
MW6IC2240GNBR1
MW6IC2240N
J5001
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J107-2
Abstract: 100A0R5BW 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM A113 A114 A115 AN1955 AN1987 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 0, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage
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MHV5IC1810N
MHV5IC1810N
MHV5IC1810NR2
J107-2
100A0R5BW
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
A113
A114
A115
AN1955
AN1987
C101
JESD22
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marking s222
Abstract: No abstract text available
Text: BGM1014 MMIC wideband amplifier Rev. 2 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
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BGM1014
OT363
771-BGM1014-T/R
BGM1014
marking s222
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AN3263
Abstract: MW6IC1940NBR1 AN1977 AN1987 j642 J1213 MW6IC1940NB
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on- chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical
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MW6IC1940N
MW6IC1940NB/GNB
MW6IC1940NBR1
MW6IC1940GNBR1
MW6IC1940NBR1
AN3263
AN1977
AN1987
j642
J1213
MW6IC1940NB
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Untitled
Abstract: No abstract text available
Text: Surface Mount ALMP-5075+ ALMP-5075 Matching Pad 50/75Ω DC to 3000 MHz Maximum Ratings Operating Temperature Features • excellent flatness, ±0.1 dB typ. • excellent return loss, 1.2:1 typ. • wideband coverage, DC to 3000 MHz • aqueous washable • low cost
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ALMP-5075+
ALMP-5075
CB518
2002/95/EC)
PL-211)
ALMP-5075
M102713
ED-7340/2
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from
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AFT05MS031N
AFT05MS031NR1
AFT05MS031GNR1
AFT05MS031NR1
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ATC600F241JT
Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of
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AFT05MS031N
AFT05MS031NR1
AFT05MS031GNR1
52ogo,
ATC600F241JT
GRM31CR61H106KA12L
atc 17-25
transistor 62
Z27 transistor
J103 transistor 3 pin
AFT05
GRM31CR61H106K
0806SQ-5N5GLC
GRM31CR61H106KA12
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j295
Abstract: SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606
Text: Document Number: MD7IC2012N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2012N wideband integrated circuit is designed with on−chip matching that makes it usable from 1805 to 2170 MHz. This multi−stage
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MD7IC2012N
MD7IC2012NR1
MD7IC2012GNR1
j295
SEMICONDUCTOR J598
J585
843 j122
GRM31B
j338
j0606
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900mhz-1800mhz rf frequency amplifier circuit
Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
Text: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.
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AN9315
HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3046
HFA3046/3096/3127/3128
800MHz
2500MHz)
10MHz
900mhz-1800mhz rf frequency amplifier circuit
PNP UHF transistor
HFA3046
uhf transistor amplifier
complementary npn-pnp
PNP transistor 263
NPN transistor mhz s-parameter
silicon bipolar transistor rf power amplifier
UHF pnp transistor
HFA3096
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J1126
Abstract: Soshin HYB0750 J16-36 GSC268-HYB0750 A114 A115 AN1977 AN1987 Nippon chemi JESD22
Text: Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev. 0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage
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MDE6IC7120N
MDE6IC7120N/GN
MDE6IC7120NR1
MDE6IC7120GNR1
J1126
Soshin HYB0750
J16-36
GSC268-HYB0750
A114
A115
AN1977
AN1987
Nippon chemi
JESD22
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transistor T04
Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ THM2004J TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
transistor T04
SiGe HBT GAIN BLOCK MMIC AMPLIFIER
TRANSISTOR 30GHZ
TRANSISTOR C 608
Germanium Amplifier Circuit diagram
Tachyonics
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Untitled
Abstract: No abstract text available
Text: Document Number: MW7IC2240N Rev. 1, 6/2011 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage
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MW7IC2240N
MW7IC2240N
MW7IC2240NR1
MW7IC2240GNR1
MW7IC2240NBR1
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J1808
Abstract: No abstract text available
Text: Document Number: MD7IC21100N Rev. 2, 2/2012 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC21100N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 to 2170 MHz. This multi-stage
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MD7IC21100N
MD7IC21100NR1
MD7IC21100GNR1
MD7IC21100NBR1
MD7IC21100N
J1808
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW7IC915N Rev. 0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage
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MW7IC915N
51miconductor
MW7IC915NT1
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Untitled
Abstract: No abstract text available
Text: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage
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MD8IC925N
MD8IC925N
MD8IC925NR1
MD8IC925GNR1
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Untitled
Abstract: No abstract text available
Text: DC Pass Matching Transformer Z7550-FFNM+ 50/75Ω DC to 2300 MHz The Big Deal • Low matching loss of 0.6 dB typ • Wideband coverage, DC-2300 MHz • Maximum DC current handling capacity of 5A • Connectorized package CASE STYLE: H795-1 Product Overview
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Z7550-FFNM+
DC-2300
H795-1
Z7550-FFNM
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
MHVIC915NR2
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B4043
Abstract: B39931-B4043-Z810 C61157-A7-A46
Text: SAW Components Low-Loss Duplexer for ISM Cordless Phone System B4043 926,25 MHz 903,65 MHz Data Sheet Ceramic package QCC 8B Features ● Compact RF duplexer for cordless telephone ISM ● No matching network required for operation at 50 Ω ● Package for Surface Mounted Technology
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B4043
B39931-B4043-Z810
C61157-A7-A46
F61074-V8037-Z000
B4043
B39931-B4043-Z810
C61157-A7-A46
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B1618
Abstract: B39122-B1618-U810 C61157-A7-A72
Text: SAW Components Data Sheet B1618 SAW Components B1618 1216,00 MHz RF Filter For Dual Conversion SMD package QCC8D Features • Low loss RF filter for dual conversion ■ Usable passband 8 MHz ■ No matching network required for operation at 200 Ω ■ Balanced to balanced operation
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B1618
B39122-B1618-U810
C61157-A7-A72
F61074-V8168-Z000
B1618
B39122-B1618-U810
C61157-A7-A72
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Untitled
Abstract: No abstract text available
Text: CHS1080 ADVANCED INFORMATION DC - 2 0 GHz R E F L E C T I V E SPDT SWI TCH G a A s M O N O L I T H I C M I C R O W A V E IC FEATURES • • • • • • • Very broadband performance : DC - 20GHz 1,9dB insertion loss 38dB isolation Excellent input and output matching
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CHS1080
20GHz
CHS1080-99A/00
CHS1080
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SA5209N
Abstract: hy 214 pin configuration 1K variable resistor schematics c band power supply satellite receiver VGA fiber NE5209 NE5209D NE5209N SA5209D mini circuits vga
Text: Product specification Philip* Semiconductors RF Communications Products Wideband variable gain amplifier NE/SA5209 PIN CONFIGURATION DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has
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NE/SA5209
NE5209
NE5209s
711002t.
AMP10101
/NE5219SO/DNB
August20
SA5209N
hy 214
pin configuration 1K variable resistor
schematics c band power supply satellite receiver
VGA fiber
NE5209D
NE5209N
SA5209D
mini circuits vga
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