MJE13003B
Abstract: No abstract text available
Text: WEITRON MJE13003B High Voltage Fast-switching NPN Power Transistor COLLECTOR 2. P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE DESCRIPTION: 1. EMITTER The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching
|
Original
|
PDF
|
MJE13003B
MJE13003B
16-May-08
270TYP
|
Untitled
Abstract: No abstract text available
Text: WT-264 Series 0606 TOP -Emitting Bicolor 0606 1615 Product Specifications Product WT-264UR/YG WT-264SD/YG WT-264Y/YG WT-264D/YG WT-264USD/UYG WT-264UY/UYG WT-264UD/UYG WT-264USD/NB WT-264UY/NB WT-264UD/NB WEITRON http://www.weitron.com.tw Emission Color
|
Original
|
PDF
|
WT-264
WT-264UR/YG
WT-264SD/YG
WT-264Y/YG
WT-264D/YG
WT-264USD/UYG
WT-264UY/UYG
WT-264UD/UYG
WT-264USD/NB
WT-264UY/NB
|
Untitled
Abstract: No abstract text available
Text: WT-122 Series 0603 Product Specifications Product Emission Color Technology Test Current Luminous Intensity IF (mA) IV (mcd) Forward Voltage VF (V) Orderable Part Number WT-122YG Yellow Green GaP 20 20 typ 2.2 typ WT-122YG-ZZZZ WT-122Y Yellow GaAsP 20 8 typ
|
Original
|
PDF
|
WT-122
WT-122YG
WT-122YG-ZZZZ
WT-122Y
WT-122Y-ZZZZ
WT-122D
WT-122D-ZZZZ
WT-122SD
WT-122SD-ZZZZ
WT-122UR
|
2N60F
Abstract: No abstract text available
Text: 2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 2 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
|
Original
|
PDF
|
O-251)
O-252)
O-251
O-252
O-252
12-Apr-2011
2N60F
|
Untitled
Abstract: No abstract text available
Text: WTC3401 P-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT -4.2 AMPERES 1 DRAIN SOURCE VOLTAGE GATE -30 VOLTAGE 2 SOURCE Features: 3 *Advanced trench process technology *High Density Cell Design For Ultra Low On-Resistance Maximum Ratings TA=25℃
|
Original
|
PDF
|
WTC3401
OT-23
03-Sep-2013
OT-23
|
DSS SOT23
Abstract: SOT N45 marking N45
Text: WTC4501 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 3.2 AMPERES P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 SOURCE Features: * Leading Planar Technology for Low Gate Charge / Fast Switching. * 2.5V Rated for Low Voltage Gate Drive.
|
Original
|
PDF
|
WTC4501
OT-23
OT-23
06-Nov-09
DSS SOT23
SOT N45
marking N45
|
Untitled
Abstract: No abstract text available
Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 8 7 6 D 3 S 5 D 4 G -10 AMPERES DRAIN SOURCE VOLTAGE D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free -30 VOLTAGE * Super high dense * Cell design for extremely low R DS(ON) * -30V/-10A,R DS(ON)<30mΩ@VGS = -10V
|
Original
|
PDF
|
WTK4435
-30V/-10A
-30V/-7A
WTK4435,
09-Jan-2014
|
DFN16
Abstract: No abstract text available
Text: UF8401MN 8 Line ESD/EMI Protection P b Lead Pb -Free 16 FEATURES: 1 • EMI/RFI Filter with Integrated TVS for ESD Protection ■ ESD Protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) ■ Integration of 40 Discrete Components ■ Filter Performance: 25dB Minimum Attenuation: 800MHz to 2.5GHz
|
Original
|
PDF
|
UF8401MN
800MHz
DFN16
29-Oct-07
DFN16
|
Untitled
Abstract: No abstract text available
Text: UF8401MN 8 Line ESD/EMI Protection P b Lead Pb -Free 16 FEATURES: 1 • EMI/RFI Filter with Integrated TVS for ESD Protection ■ ESD Protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) ■ Integration of 40 Discrete Components ■ Filter Performance: 25dB Minimum Attenuation: 800MHz to 2.5GHz
|
Original
|
PDF
|
UF8401MN
800MHz
DFN16
29-Oct-07
|
Untitled
Abstract: No abstract text available
Text: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability
|
Original
|
PDF
|
WOSD03/WOSD05
WOSD12
OD-323
OD-323
22-Jun-09
|
Untitled
Abstract: No abstract text available
Text: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability
|
Original
|
PDF
|
WOSD03/WOSD05
WOSD12
OD-323
OD-323
19-Jan-08
|
WOSD12
Abstract: 5D marking 30KV WOSD03 WOSD05 820s
Text: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability
|
Original
|
PDF
|
WOSD03/WOSD05
WOSD12
OD-323
OD-323
19-Dec-05
WOSD12
5D marking
30KV
WOSD03
WOSD05
820s
|
Untitled
Abstract: No abstract text available
Text: WSR05 LOW CAPACITANCE DIODE ARRAY P b Lead Pb -Free DESCRIPTION: TRANSIENT VOLTAGE SUPPERSSORS 5.0 VOLTS WSR05 are surge rated diode arrays designed to protect high speed data components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge),
|
Original
|
PDF
|
WSR05
WSR05
31-Dec-08
OT-143
|
BAS516
Abstract: SC79
Text: BAS516 High Speed Switching Diodes SWITCHING DIODE 250 mAMPERES 75 VOLTS P b Lead Pb -Free Features: * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak forward current: max. 500 mA 1 2 Applications: * High-speed switching in e.g. surface mounted circuits.
|
Original
|
PDF
|
BAS516
OD-523
BAS516
OD-523
06-Jan-06
SC79
|
|
|
30KV
Abstract: WOSD03 WOSD05 WOSD12
Text: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS P b Lead Pb -Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability
|
Original
|
PDF
|
WOSD03/WOSD05
WOSD12
OD-323
OD-323
22-Jun-09
30KV
WOSD03
WOSD05
WOSD12
|
5A SOD323
Abstract: WOSD03 WOSD05 WOSD12
Text: WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes * “G” Lead Pb -Free FEATURES *Low Leakage Current *300 Watts Peak Power Protection(tp=8/20 uS) *Excellent Clamping Capability *Transient Voltage Suppressors Encapsulated in a SOD-323 Package *Small Package for use in Portable Electronics
|
Original
|
PDF
|
WOSD03/WOSD05
WOSD12
OD-323
OD-323
23-Jun-05
5A SOD323
WOSD03
WOSD05
WOSD12
|
ESD5V0B
Abstract: No abstract text available
Text: ESD5V0B3E 2-Line TVS Array Peak Pulse Power 25 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free * Halogen-Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
|
Original
|
PDF
|
5/50ns)
BFBP-03E
02-Apr-08
ESD5V0B
|
Untitled
Abstract: No abstract text available
Text: ESD0502B3E 2-Line TVS Array Peak Pulse Power 25 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free * Halogen-Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
|
Original
|
PDF
|
ESD0502B3E
5/50ns)
BFBP-03E
02-Apr-08
|
Untitled
Abstract: No abstract text available
Text: ESD3305B6E Low Voltage TVS for ESD Protection Peak Pulse Power 40 Watts Reverse Working Voltage 3.3 VOLTS P b Lead Pb -Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
|
Original
|
PDF
|
ESD3305B6E
5/50ns)
30-Apr-08
|
ESD3305B6E
Abstract: No abstract text available
Text: ESD3305B6E Low Voltage TVS for ESD Protection Peak Pulse Power 40 Watts Reverse Working Voltage 3.3 VOLTS P b Lead Pb -Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
|
Original
|
PDF
|
ESD3305B6E
5/50ns)
BFBP-06E
BFBP-06E
30-Apr-08
ESD3305B6E
|
Untitled
Abstract: No abstract text available
Text: WT- 206DV06 A Zener Diode Chips for ESD Protection 1. Feature: 1-2 Silicon Zener diode chips for electrostatic discharge (ESD) protection application. 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy. Back side:Gold Layer.
|
Original
|
PDF
|
206DV06
98mils
98mils
12mils
12mils
09-Jun-10
|
Untitled
Abstract: No abstract text available
Text: WT-106DP14 A Zener Diode Chips for ESD Protection 1. Feature: 1-2 Silicon Zener diode chips for electrostatic discharge (ESD) protection application. 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy(Anode). Back side:Gold Layer(Cathode).
|
Original
|
PDF
|
WT-106DP14
98mils
98mils
12mils
12mils
09-Jun-10
|
3.2 v zener diode
Abstract: 105um DIODE ZENER X
Text: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
PDF
|
WT-Z106P-4-12
150mm)
05-Dec-06
3.2 v zener diode
105um
DIODE ZENER X
|
Untitled
Abstract: No abstract text available
Text: WT-106DN09 A Zener Diode Chips for ESD Protection 1. Feature: 1-1 This specification is suitable for N/P zener single-direction structure chips use. 2. Structure: 2-1 Paralleled the LED 2-2 Unity pad metal (one wire bonding applied only) 2-3 One-way Zener diode protection
|
Original
|
PDF
|
WT-106DN09
98mils
98mils
75mils
75mils
09-Feb-2011
|
