WED416S8030A12SI Search Results

WED416S8030A12SI Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
WED416S8030A12SI		White Electronic Designs	2Mx16x 4 Banks Synchronous DRAM		Original	PDF
WED416S8030A12SI		White Electronic Designs	2M x 16 Bits x 4 Banks Synchronous DRAM		Original	PDF

WED416S8030A12SI Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
WED416S8030A Abstract: No abstract text available Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,	Original	WED416S8030A WED416S8030A 83MHz 100MHz) 83MHz) lengt471) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI	PDF
jedec ms-024 Abstract: MS-024-FA ms024 WED416S8030A-S 2Mx16bit Text: White Electronic Designs WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows	Original	WED416S8030A-SI 2Mx16x WED416S8030AxxSI 100MHz) 83MHz) jedec ms-024 MS-024-FA ms024 WED416S8030A-S 2Mx16bit	PDF
Untitled Abstract: No abstract text available Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,	Original	WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A WED416S8030A10SI WED416S8030A12SI 2Mx16bitsx4banks 100MHz	PDF
WED416S8030A Abstract: WED416S4030A 2MX16x4 WED416S8030A10SI Text: White Electronic Designs WED416S8030A 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply Fully Synchronous to positive Clock Edge Clock Frequency = 100, 83MHz SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) Burst Operation	Original	WED416S8030A 2Mx16x WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI WED416S8030A12SI 2Mx16bitsx4banks WED416S4030A 2MX16x4 WED416S8030A10SI	PDF
Untitled Abstract: No abstract text available Text: WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows precise cycle control with the use of	Original	WED416S8030A-SI 2Mx16x WED416S8030AxxSI 100MHz) 83MHz)	PDF
D7678 Abstract: WED416S8030A 2MX16x4 WED416S8030A10s Text: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise	Original	WED416S8030A 2Mx16x4 WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI D7678 WED416S8030A10s	PDF