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    WE VQE 14 E Search Results

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    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1600 International I R Rectifyler IRG4BC20K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc = 1 0 jjs, @ 360V V CE start , T j= 1 2 5 ° C ,


    OCR Scan     		PDF IRG4BC20K SS45S

    WE VQE 24 E

    Abstract: WE VQE 11 E WE VQE 24
    Text: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V


    OCR Scan     		PDF IRG4PH40K WE VQE 24 E WE VQE 11 E WE VQE 24

    BA 4213

    Abstract: transistor k 4213 diode rj 93
    Text: 7 2 9 4 6 2 1' PO WE R EX IN C m u m n ex Tf l DE§ 7 2 ^ 5 1 D0D2377 1 f~ ’ ' d T ^ 3 3 ' ;3 5 ’" KT521K03 Powerex, Inc., M ills Street, Ybungwood, Pennsylvania 15697 412 925-7272 Split-Dual Darlington Transistor Module 30 Am peres/1000. Volts Description


    OCR Scan     		PDF D0D2377 KT521K03 peres/1000. Amperes/1000 -261C BA 4213 transistor k 4213 diode rj 93

    Untitled

    Abstract: No abstract text available
    Text: 2 International I R Rectifier PD - 9.1578A IRG4PH40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, t*. =10ps, VCC = 720V , T j = 125°C, VGe =15V • Combines low conduction losses with high


    OCR Scan     		PDF IRG4PH40K

    WE VQE 23 F

    Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
    Text: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,


    OCR Scan     		PDF 1RG4BC30K-S generati08 WE VQE 23 F WE VQE 23 E WE VQE 11 E 1RG4BC30K-S

    UEI 20 SP 010

    Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
    Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"


    OCR Scan     		PDF 64-KBit-Sehreib--Iese-Speicher 086/11/B9 UEI 20 SP 010 Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D

    Transistor BC 227

    Abstract: No abstract text available
    Text: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V


    OCR Scan     		PDF 554S2 Transistor BC 227

    transistor iqr

    Abstract: No abstract text available
    Text: International IGR Recti fi'ier PD - 9.1600 IRG4BC20K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tjc =10|js, @360V VCE start , T j = 125°C, VGE= 15V


    OCR Scan     		PDF IRG4BC20K transistor iqr

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESS EY SEMICONDUCTORS DS4137-6.2 GP400LSS12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS • High P ow er Switching. ■ M otor Control. TYPICAL KEY PARAMETERS VCES 1200V V c E ,a„ ^c(cont> ■ U P S. ■ A C And D C Servo Drive Amplifiers. 'c p k ,


    OCR Scan     		PDF DS4137-6 GP400LSS12S 190ns 840ns 44lbs 70lbs 88lbs 18lbs 1500g

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENÎK4915 CMOS LSI LC35256AM-15LV 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Preliminary Overview Package Dimensions The LC35256AM-15LV is an asynchronous silicon-gate CMOS SRAM with a 32K-word by 8-bit organization and


    OCR Scan     		PDF K4915 LC35256AM-15LV LC35256AM-15LV 32K-word LC35256Aet DD153ST

    ECJF

    Abstract: No abstract text available
    Text: International IOR Rectifier P D - 9.1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC20F O-220AB ECJF

    Buf725d

    Abstract: transistor BUF725D
    Text: T e m ic BUF725D Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate


    OCR Scan     		PDF BUF725D D-74025 18-Jul-97 Buf725d transistor BUF725D

    LC35256A

    Abstract: LC35256AM LC35256AS 5K4916
    Text: Ordering number : EN%S4916 CMOS LSI LC35256A, AS, AM-70/85/10 No. 5K4916 S A \Y O 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM are 32768 words x 8-biis asynchronous silicon gate CMOS SRAMs. These products


    OCR Scan     		PDF S4916 5K4916 LC35256A, AM-70/85/10 LC35256A 0D1535E LC35256AM LC35256AS 5K4916

    AT-10

    Abstract: LC35256A LC35256AM LC35256AS LC35256AT
    Text: Ordering number : EN4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No 4916A SAmYO i 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Overview • 28 -pin T S O P (8 x 13.4mm) p lastic packag e: L C 3 5 2 5 6 A T T h e L C 3 5 2 5 6 A , A S , A M , a n d A T a re 3 2 7 6 8 w o r d s x


    OCR Scan     		PDF EN4916A LC35256A, AT-70/85/10 LC35256A AT-10 LC35256AM LC35256AS LC35256AT

    1.8 degree bipolar stepper motor

    Abstract: No abstract text available
    Text: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution


    OCR Scan     		PDF IXMS150 24-Pin 4bfib22b 1.8 degree bipolar stepper motor

    CT7605

    Abstract: vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor
    Text: WESTCODE SEMICONDUCTORS 1TE D ìto tiss G D G ain 1 r - S 3 -is-. Technical Publication WESTCODE SEMICONDUCTORS CT7605 Issue 3 . July 1985 NPN POWER TRANSISTOR CT7605 I K \ Ratings POWERSWITCH 600 VOLTS 250 AM PERES Fast Switching V CEV 600V V CEO SUS 500V


    OCR Scan     		PDF CT7605 545kgf 100kgf 47nux 100mA lc200A CT7605 vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor

    MJ10100

    Abstract: MJ1002 RBSOA mj1010 AN-861 MJ10021
    Text: AN-861 M O TO R O LA Semiconductor Products Inc. Application Note POWER TRANSISTOR SAFE OPERATING AREA — SPECIAL CONSIDERATIONS FOR MOTOR DRIVES Prepared by W a r re n S c h u ltz A p p lic a tio n s E n g in e e rin g M o t o r d rives p resent a u n iq u e set o f safe op erating area


    OCR Scan     		PDF AN-861 AN861/D AN861/D MJ10100 MJ1002 RBSOA mj1010 AN-861 MJ10021

    RCD snubber

    Abstract: calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit
    Text: Switching Voltage Transient Protection Schemes For High Current IGBT Modules Rahul Chokhawaia, Saed Sobhani International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 A bstract: The emergence o f high current an d fa ster


    OCR Scan     		PDF AN-983. AN-984, RCD snubber calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit

    information applikation

    Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
    Text: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK


    OCR Scan     		PDF

    VEB mikroelektronik

    Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
    Text: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden


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    2N498

    Abstract: 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S
    Text: MIL SPECS I C | Q0D01ES 0000537 S "T~ 35 MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION S E M I C O N D U C T O R DE VICE, T R A N S I S T O R , N P N , SI LICON, M E D I U M - P O W E R T Y P E S 2 N 4 9 7 , 2N498, 2N656, 2N657 ,


    OCR Scan     		PDF 0Q001BS MIL-S-19500/74E 2N497, 2N498, 2N656, 2N657 2N497S, 2N498S, 2N656S, 2N657S 2N498 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S

    68HC24

    Abstract: 14049UB mc14000 series 74LS240-74HC240 74LS04 Hex Inverter Gate function table 74LS04 NOT gate MC14049 IC AN1102 motorola AN1102-D CMOS IC 4069UB
    Text: by AN1102/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1102 Interfacing Power MOSFETs to Logic Devices Prepared by Ken Berringer Motorola Discrete Applications POWER MOSFET DRIVE CHARACTERISTICS Power M OSFETs are commonly used in switching applica­ tions due to their fast switching speeds and low static losses.


    OCR Scan     		PDF AN1102/D AN1102 25178T AN1102/D 68HC24 14049UB mc14000 series 74LS240-74HC240 74LS04 Hex Inverter Gate function table 74LS04 NOT gate MC14049 IC AN1102 motorola AN1102-D CMOS IC 4069UB

    wf vqe 24 d

    Abstract: tr 13001 WF VQE 13 X2816A 60395 xicor WE VQE 11 E WE VQE 24 E wf vqe 24 f WF VQE 22 c WF VQE 11 E
    Text: 1 MIL-M-38510/227 27 MARCH 1987 M IL IT A R Y S P E C IF IC A T IO N M IC R O C IR C U IT S , D I G I T A L , NMOS, 16,384 B I T , E L E C T R IC A L L L Y E R A S A B L E , PROGRAMMABLE READ-ONLY MEMORY E E P R O M , MONOLITHIC S IL IC O N T h is s p e c i f i c a t i o n is


    OCR Scan     		PDF MIL-M-38510/227 MIL-M-38510, MIL-M-38510 MIL-M-38510. X2816A-45/XIC0R X2816A-35/XIC0R X2816A-30/XICOR X2816A-25/XIC0* IL-M-38510/227 wf vqe 24 d tr 13001 WF VQE 13 X2816A 60395 xicor WE VQE 11 E WE VQE 24 E wf vqe 24 f WF VQE 22 c WF VQE 11 E

    Untitled

    Abstract: No abstract text available
    Text: HIP6018B Data Sheet Advanced PWM and Dual Linear Power Control The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well


    OCR Scan     		PDF HIP6018B HIP6018B 12Vqq. AN9805.