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    WB4 MARKING Search Results

    WB4 MARKING Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    WB4 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    wb4 marking

    Abstract: J152 mosfet transistor 2110 transistor
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180R6 wb4 marking J152 mosfet transistor 2110 transistor

    93F2975

    Abstract: 865 marking amplifier MRF9120LR3
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9120R3 MRF9120LR3 93F2975 865 marking amplifier

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180 MRF21180R6

    rf push pull mosfet power amplifier

    Abstract: class A push pull power amplifier marking us capacitor pf l1 MARKING WB1 MRF9120 MRF9120LR3 marking WB3 C2622
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9120LR3 MRF9120 rf push pull mosfet power amplifier class A push pull power amplifier marking us capacitor pf l1 MARKING WB1 MRF9120 MRF9120LR3 marking WB3 C2622

    rf push pull mosfet power amplifier

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9120 MRF9120LR3 MRF9120 rf push pull mosfet power amplifier

    rf push pull mosfet power amplifier

    Abstract: MRF9120 MRF9120LR3 marking WB4
    Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9120 MRF9120LR3 rf push pull mosfet power amplifier MRF9120 MRF9120LR3 marking WB4

    MRF9120

    Abstract: MRF9120LR3
    Text: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9120 MRF9120LR3 IS-95 MRF9120 MRF9120LR3

    TH 2190 mosfet

    Abstract: CDR33BX104AKWS MRF21180 MRF21180R6
    Text: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180 MRF21180R6 TH 2190 mosfet CDR33BX104AKWS MRF21180 MRF21180R6

    MOSFET 1300 F2

    Abstract: TH 2190 mosfet CDR33BX104AKWS MRF21180 MRF21180R6 303 2170 001
    Text: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180 MRF21180R6 MOSFET 1300 F2 TH 2190 mosfet CDR33BX104AKWS MRF21180 MRF21180R6 303 2170 001

    MRF377HR3

    Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
    Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377HR3 MRF377HR5 NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21180 Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180 MRF21180R6

    MRF9120

    Abstract: No abstract text available
    Text: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9120 MRF9120LR3 IS-95 MRF9120

    MRF9120

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9120 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9120 MRF9120R3 MRF9120LR3 MRF9120R3 MRF9120

    MRF9120L

    Abstract: 100B4R7
    Text: Freescale Semiconductor Technical Data MRF9120 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9120 IS-97 MRF9120R3 MRF9120LR3 MRF9120L 100B4R7

    marking WB4

    Abstract: NIPPON CHEMI nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 MRF377H marking WB4 NIPPON CHEMI nippon capacitors

    MRF377H

    Abstract: dvbt transmitter MRF377HR3 resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi
    Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 MRF377HR3 MRF377H dvbt transmitter resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi

    MRF377H

    Abstract: nippon capacitors J628 Nippon chemi
    Text: Freescale Semiconductor Technical Data MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 MRF377H nippon capacitors J628 Nippon chemi

    0805J

    Abstract: nippon capacitors J564 Nippon chemi
    Text: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 0805J nippon capacitors J564 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3

    MRF377

    Abstract: 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi

    transistor amplifier 1ghz 1400 watts

    Abstract: nippon capacitors 0603HC-10NXJB Nippon chemi
    Text: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 transistor amplifier 1ghz 1400 watts nippon capacitors 0603HC-10NXJB Nippon chemi

    nippon capacitors

    Abstract: dvbt transmitter j564 Nippon chemi
    Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 nippon capacitors dvbt transmitter j564 Nippon chemi

    2DS1047

    Abstract: nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 MRF377 2DS1047 nippon capacitors Nippon chemi

    nitto SWT 10

    Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
    Text: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device


    Original     		PDF QSP0005 MAS1234AB3 MAS1234AB3xxxxx) 98AA2 MAS9198AA2xxxxx) nitto SWT 10 nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04