WB2 MARKING Search Results

WB2 MARKING Result Highlights (5)

Part	Manufacturer	Description
5962-8950303GC	Rochester Electronics LLC	ICM7555M - Dual Marked (ICM7555MTV/883)
54HC221AJ/883C	Rochester Electronics LLC	54HC221AJ/883C - Dual marked (5962-8780502EA)
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)

WB2 MARKING Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
T85 5e4 Switch Abstract: 5E4 T85 Text: WB2-Series High Amperage Water Protection Heavy Duty Front Panel Mount The WB2-Series is a cutting edge water-resistant rocker switch. Utilizing innovative, flexible internal seals that do not affect the feel or action, this switch does NOT require a PVC cap to achieve	Original	125VAC 250VAC 125/250VAC WB242D1121: WB246D1100: T85 5e4 Switch 5E4 T85	PDF
5E4 T85 Abstract: 5E4T85 T85 "Rocker Switches" marking 2P 125VAC-T85 marking wb2 20A marking Text: WB2 Series High Amperage Water Protection Heavy Duty Front Panel Mount FEATURES: SPECIFICATIONS: RATING: MAINTAINED SWITCHES: 20A 125VAC [cULus] 20A 250VAC [cULus] 2HP 125/250VAC [cULus] 22 14 A 250V~ 5E4 T85 [European] MOMENTARY SWITCHES: 20A 125VAC T85 [cULus]	Original	125VAC 250VAC 125/250VAC 125VAC 250VAC 500VDC 500VAC WB246D112S WB24ED1121 5E4 T85 5E4T85 T85 "Rocker Switches" marking 2P 125VAC-T85 marking wb2 20A marking	PDF
MRF9030NR1 Abstract: marking z17 100B470JP Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9030MBR1) MRF9030NR1 MRF9030MR1 MRF9030MBR1 marking z17 100B470JP	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1)	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors	Original	MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1	PDF
MRF9045N Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045 Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9045N MRF9045NR1 MRF9045N 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045	PDF
VIPer 32 Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17 Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors	Original	MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1 VIPer 32 MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 marking z17	PDF
MRF9060L Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9060LR1 MRF9060LSR1 MRF9060L	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9045N MRF9045NR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB	Original	MRF9045N MRF9045NBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 9, 5/2006 Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF9045MR1	Original	MRF9045MR1 MRF9045NR1/NBR1. MRF9045MBR1 MRF9045MR1	PDF
TO-270-2 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9030M MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 TO-270-2	PDF
MRF9045N Abstract: A113 MRF9045MR1 MRF9045NBR1 MRF9045NR1 MARKING WB1 6020G Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045NR1 MRF9045NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9045N MRF9045NR1 MRF9045NBR1 MRF9045NR1 MRF9045N A113 MRF9045MR1 MRF9045NBR1 MARKING WB1 6020G	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9085LR3 MRF9085LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9085LR3 MRF9085LSR3	PDF

MARKING WB1 Abstract: marking us capacitor pf l1 marking Z4 wb1 99 A113 MRF9045MBR1 MRF9045MR1 Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 9, 5/2006 Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF9045MR1	Original	MRF9045MR1 MRF9045NR1/NBR1. MRF9045MBR1 MRF9045MR1 MARKING WB1 marking us capacitor pf l1 marking Z4 wb1 99 A113 MRF9045MBR1	PDF
MRF9030N Abstract: wb1 99 MRF9030NBR1 A113 MRF9030NR1 marking wb2 Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030NR1 MRF9030NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9030N MRF9030NR1 MRF9030NBR1 MRF9030NR1 MRF9030N wb1 99 MRF9030NBR1 A113 marking wb2	PDF
93F2975 Abstract: marking 865 amplifier 100B120JP 865 marking amplifier Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9135LR3 MRF9135LSR3 93F2975 marking 865 amplifier 100B120JP 865 marking amplifier	PDF
0805 capacitor 10 pf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9045MR1 MRF9045NR1 MRF9045NBR1 MRF9045MBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9045MR1 MRF9045NR1 MRF9045NBR1 MRF9045MBR1	PDF
MARKING WB1 Abstract: MRF9030NBR1 VIPer Design Software A113 MRF9030M MRF9030MBR1 MRF9030MR1 MRF9030NR1 marking z17 Text: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9030M MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 MRF9030NR1 MRF9030NBR1 MRF9030MR1 MARKING WB1 VIPer Design Software A113 MRF9030M MRF9030MBR1 marking z17	PDF
wb4 marking Abstract: J152 mosfet transistor 2110 transistor Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF21180R6 wb4 marking J152 mosfet transistor 2110 transistor	PDF
Untitled Abstract: No abstract text available Text: c*L4RoHSC€ WB2 Series FEATURES: • High Ratings with UL and TUV Approvals • Industry Standard 22mm x 30mm Cutout • Internal Dust and Water Protection to IP55 R R ating: Maintained 20A, 125/250VAC T65/T85 [CURus] 2.0HP, 125/250VAC [oURus] 18 12 A, 250VAC 5E4 T85 [TUV]	OCR Scan	125/250VAC T65/T85 125/250VAC 250VAC 500MTJ 500VDC	PDF
WP1F Abstract: BLC 902 IR3Y38M CQ 229 CIRCUIT diagram tv sharp 21 BG 12 lw 293 SHARP camera CIF LR38630 LZ34C10 I04M Text: SHARP LR 3 8 6 3 0 S P E C I S S U E T o No. EL109139 : Septem ber 30, 1998 ;_ SPEC I F I CAT I ONS Product Type Model No. DIGITAL SIGNAL PROCESSOR FOR CIF CMOS-IMAGER CAMERA LR38630 ^?This specification contains 39 pages including the cover and appendix.	OCR Scan	EL109139 LR38630 LQFP80â AA1114 LR38630 CV626 WP1F BLC 902 IR3Y38M CQ 229 CIRCUIT diagram tv sharp 21 BG 12 lw 293 SHARP camera CIF LZ34C10 I04M	PDF

WB2 MARKING Search Results

WB2 MARKING Result Highlights (5)

WB2 MARKING Datasheets Context Search

T85 5e4 Switch

5E4 T85

MRF9030NR1

Untitled

Untitled

MRF9045N

VIPer 32

MRF9060L

Untitled

Untitled

Untitled

TO-270-2

MRF9045N

Untitled

MARKING WB1

MRF9030N

93F2975

0805 capacitor 10 pf

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MARKING WB1

wb4 marking

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WP1F