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    WAS DUAL TRANSISTOR Search Results

    WAS DUAL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    WAS DUAL TRANSISTOR Price and Stock

    Microchip Technology Inc 2N5793

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    Microchip Technology Inc 2N3810A

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    Microchip Technology Inc 2N4854

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    Microchip Technology Inc 2N4854U

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    Microchip Technology Inc JAN2N3810L

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    WAS DUAL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM 458 opamp

    Abstract: No abstract text available
    Text: MC1458, C Internally Compensated, High Performance DUAL OPERATIONAL AMPLIFIERS Dual Operational Amplifiers DUAL MC1741 The MC1458, C was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external


    Original     		PDF MC1458, MC1741) LM 458 opamp

    CD40138

    Abstract: design of the IC CD4013 CD4013 application CD4013 DATA SHEET cd4013 pin configuration SCHEMATIC of the IC CD4013 CA339 68HC05 CD4013 equivalent CA3277
    Text: No. AN9302.1 Intersil Intelligent Power April 1994 CA3277 Dual 5V Regulator Circuit Applications Author: John C. Rice Introduction General Discussion The CA3277 dual 5V regulator was designed to perform reliably in harsh Automotive and Industrial environments


    Original     		PDF AN9302 CA3277 100mA CD40138 design of the IC CD4013 CD4013 application CD4013 DATA SHEET cd4013 pin configuration SCHEMATIC of the IC CD4013 CA339 68HC05 CD4013 equivalent

    transistor Y4

    Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
    Text: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    Original     		PDF FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 marking 004 Supersot 6 complementary npn-pnp marking Y4 150MA80

    IC CD4013

    Abstract: CD4013 application CD4013 application note design of the IC CD4013 cd40138 CD4013 DATA SHEET CD4013 equivalent 6 volt pickup ignition SCHEMATIC of the IC CD4013 free pdf cd4013
    Text: Harris Semiconductor No. AN9302.1 Harris Intelligent Power April 1994 CA3277 DUAL 5V REGULATOR CIRCUIT APPLICATIONS Author: John C. Rice Introduction General Discussion The CA3277 dual 5V regulator was designed to perform reliably in harsh Automotive and Industrial environments


    Original     		PDF AN9302 CA3277 100mA DB304 CDP6805 DB260 IC CD4013 CD4013 application CD4013 application note design of the IC CD4013 cd40138 CD4013 DATA SHEET CD4013 equivalent 6 volt pickup ignition SCHEMATIC of the IC CD4013 free pdf cd4013

    DS3632N

    Abstract: DS3633N DS3634N DS3631N DS1633 DS3632 DS1631H/883B CMOS Dual Peripheral Drivers DS1631 DS75461
    Text: DS1631 DS3631 DS1632 DS3632 DS1633 DS3633 DS1634 DS3634 CMOS Dual Peripheral Drivers General Description The DS1631 series of dual peripheral drivers was designed to be a universal set of interface components for CMOS circuits Each circuit has CMOS compatible inputs with thresholds


    Original     		PDF DS1631 DS3631 DS1632 DS3632 DS1633 DS3633 DS1634 DS3634 DS3632N DS3633N DS3634N DS3631N DS1631H/883B CMOS Dual Peripheral Drivers DS75461

    ECM001

    Abstract: ecm001is
    Text: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction


    Original     		PDF ECM001 ECM001 SS-000340-000 ecm001is

    ECM001

    Abstract: dual power supply
    Text: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction


    Original     		PDF ECM001 ECM001 AP-000513-000 AP-000516-000 SS-000340-000 dual power supply

    ECM001

    Abstract: EIC 70
    Text: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction


    Original     		PDF ECM001 ECM001 AP-000513-000 AP-000516-000 SS-000340-000 EIC 70

    marking Y1 transistor

    Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
    Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring


    Original     		PDF FMB2227A 300mA. 150mA, 300mA, 150mA 300mA 100kHz 100MHz lwpPr19 marking Y1 transistor transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A

    marking Y1 transistor

    Abstract: fairchild pin 1 marking
    Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring


    Original     		PDF FMB2227A 300mA. marking Y1 transistor fairchild pin 1 marking

    transistor Y2

    Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
    Text: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    Original     		PDF FMB3946 100mA 100MHz 100MHz 100uA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp Supersot 6

    ISL7119EH

    Abstract: No abstract text available
    Text: Application Note 1872 Total Dose Testing of the ISL7119EH Dual Voltage Comparator Introduction This report summarizes the results of a low and high dose rate total dose test of the ISL7119EH dual voltage comparator. The test was conducted in order to determine the sensitivity of the


    Original     		PDF ISL7119EH ISL7119 ISL7119RH 300rad 300krad 01rad 50krad

    Untitled

    Abstract: No abstract text available
    Text: ISL54066 Data Sheet November 3, 2009 Negative Signal Swing, High Off-Isolation, Dual SPST Single Supply Switch The Intersil ISL54066 device is a low ON-resistance, high off-isolation, low voltage, dual single-pole/single-throw SPST analog switch. It was designed to operate from a single +1.8V


    Original     		PDF ISL54066 ISL54066 FN6584

    AN557

    Abstract: ISL54066 ISL54066IRUZ-T TB347 TB363
    Text: ISL54066 Data Sheet November 3, 2009 Negative Signal Swing, High Off-Isolation, Dual SPST Single Supply Switch The Intersil ISL54066 device is a low ON-resistance, high off-isolation, low voltage, dual single-pole/single-throw SPST analog switch. It was designed to operate from a single +1.8V


    Original     		PDF ISL54066 ISL54066 FN6584 AN557 ISL54066IRUZ-T TB347 TB363

    tdma circuit diagram

    Abstract: BIPOLAR TRANSISTOR ECM805
    Text: PRELIMINARY DATA SHEET ECM805 9 x 11 mm Dual Mode Cellular TDMA/AMPS 4.2V POWER AMPLIFIER MODULE Description Features The ECM805 is a 9 X11 mm cellular band 824 to 849MHz dual mode (TDMA IS136 and AMPS) power amplifier module. This device was developed using EiC’s own InGaP Gallium Arsenide


    Original     		PDF ECM805 ECM805 849MHz) IS136 IS136/AMPS High10 MCH185A5101JK MCH182CN104KK ECS-HICC106R tdma circuit diagram BIPOLAR TRANSISTOR

    tdma circuit diagram

    Abstract: ECM806 IS136 MCH185A101JK capacitor 6032 ecshi
    Text: PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM806 is a 6 X 6 mm cellular band 824 to 849MHz dual mode (TDMA IS136 and AMPS) power amplifier module. This device was developed using EiC’s own InGaP


    Original     		PDF ECM806 ECM806 849MHz) IS136 IS136/AMPS AP-000513-000 AP-000516-000 ECM806-2000 SS-000489-000 tdma circuit diagram MCH185A101JK capacitor 6032 ecshi

    c3c3 transistor

    Abstract: tdma circuit diagram cdi circuit diagram
    Text: ECM801 TARGET DATA SHEET 9 x 11 mm Dual Mode Cellular TDMA/AMPS 4.2V POWER AMPLIFIER MODULE Description Features The ECM801 is a 9 X11 mm cellular band 824 to 849MHz dual mode (TDMA IS136 and AMPS) power amplifier module. This device was developed using EiC’s own InGaP Gallium Arsenide


    Original     		PDF ECM801 ECM801 849MHz) IS136 IS136/AMPS 100C12 MCH185A5101JK MCH182CN104KK ECS-HICC106R c3c3 transistor tdma circuit diagram cdi circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: TARGET DATA SHEET ECM051 4 X 4 mm Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM051 is a 10 signal pin 4 X 4 mm dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide Heterojunction Bipolar Transistor HBT process. It is optimized for cellular CDMA (digital) and AMPS


    Original     		PDF ECM051 ECM051 SS-000505-000

    mct1458cp

    Abstract: MCT1458CP1
    Text: MCT1458, C Internally Compensated, High Performance Dual Operational Amplifier The MCT1458, C was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external feedback components. • No Frequency Compensation Required


    Original     		PDF MCT1458, MC1741) mct1458cp MCT1458CP1

    MCT1458

    Abstract: No abstract text available
    Text: Order this document by MCT1458 MCT1458, C Internally Compensated, High Performance Dual Operational Amplifier The MCT1458, C was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external feedback components.


    Original     		PDF MCT1458 MCT1458, MC1741) MCT1458C 1PHX33752-0 MCT1458/D* MCT1458/D MCT1458

    FMBA0656

    Abstract: transistor marking E2 Supersot 6 transistor marking c1
    Text: FMBA0656 Package: SuperSOT-6 Device Marking: .003 C2 E1 C1 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at collector currents to 300mA.


    Original     		PDF FMBA0656 300mA. fmba0656 lwpPr33 transistor marking E2 Supersot 6 transistor marking c1

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    OCR Scan     		PDF FMB1020 300mA. 10OuA 100mA 150mA 200mA, 100MHz 10OuA, fmb1020

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    OCR Scan     		PDF FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23

    DS3632N

    Abstract: DS3631N DS3633N ds75461 DS1631 DS3631 DS75451 MM74C DS3633 ds1633
    Text: Semiconductor DS1631 / DS3631/D S1632/D S3632/D S1633/DS3633/ DS1634/DS3634 CMOS Dual Peripheral Drivers G eneral Description The DS1631 series of dual peripheral drivers was designed to be a universal set of interface components for CMOS circuits. Each circuit has CMOS compatible inputs with thresholds


    OCR Scan     		PDF DS1631 DS3631 /DS1632/DS3632/DS1633/DS3633/ DS1634/DS3634 DS1B32 DS1634 OS1631 DS1633 DS3631, DS3632N DS3631N DS3633N ds75461 DS75451 MM74C DS3633 ds1633