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    W2D 98 Search Results

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    W2D 98 Price and Stock

    Siemens 52SW2DAB

    Switch Actuators SEL SWITCH,MNTD,WHT INS,LNG LVR,3POS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 52SW2DAB
    • 1 $63.31
    • 10 $60.56
    • 100 $58.06
    • 1000 $58.06
    • 10000 $58.06
    Get Quote

    Siemens 52SW2DCB

    Switch Actuators SEL SWITCH, RET FROM R,LNG LVR,3POS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 52SW2DCB
    • 1 $98.32
    • 10 $90.92
    • 100 $85.11
    • 1000 $85.11
    • 10000 $85.11
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    Siemens 52BM9W2D

    Industrial Panel Mount Indicators / Switch Indicators PUSHBUTTON,MOM,RED,1 3/4" PLST,2POS,4BJK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 52BM9W2D
    • 1 $232.15
    • 10 $223.24
    • 100 $221.03
    • 1000 $221.03
    • 10000 $221.03
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    Siemens 52PM9W2D

    Industrial Panel Mount Indicators / Switch Indicators PUSHBUTTON,MOM,RED,1 3/4" PLST,2POS,4BJK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 52PM9W2D
    • 1 $240.13
    • 10 $230.91
    • 100 $228.63
    • 1000 $228.63
    • 10000 $228.63
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    Siemens 52PR8W2D

    Industrial Panel Mount Indicators / Switch Indicators OPER,PTR,2POS,MTD,RED,4NO-4NC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 52PR8W2D
    • 1 $280.76
    • 10 $269.99
    • 100 $267.32
    • 1000 $267.32
    • 10000 $267.32
    Get Quote

    W2D 98 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    W2D SOT23

    Abstract: diode w2d transistor w2d marking CODE W2D marking w2d sot23 w2d MC 68 H 705 part no w2d 48 A114 A115
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    PDF MC74VHC1G126 MC74VHC1G126 353/SC r14525 MC74VHC1G126/D W2D SOT23 diode w2d transistor w2d marking CODE W2D marking w2d sot23 w2d MC 68 H 705 part no w2d 48 A114 A115

    Untitled

    Abstract: No abstract text available
    Text: MC74VHC1G126 Product Preview Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    PDF MC74VHC1G126 MC74VHC1G126 r14525 MC74VHC1G126/D

    A114

    Abstract: A115 C101 JESD22 MC74VHC1G126 diode w2d marking w2d a MC 68 H 705
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    PDF MC74VHC1G126 MC74VHC1G126 353/SC r14525 MC74VHC1G126/D A114 A115 C101 JESD22 diode w2d marking w2d a MC 68 H 705

    diode w2d

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    PDF MC74VHC1G126 353/SC r14525 MC74VHC1G126/D diode w2d marking w2d

    W2D SOT23

    Abstract: transistor w2d part no w2d 48 sot23 w2d marking w2d marking code 10 sot23 A114 A115 C101 JESD22
    Text: MC74VHC1G126 Noninverting 3−State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3−state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    PDF MC74VHC1G126 MC74VHC1G126 SC-88A OT-353/SC-70 MC74VHC1G126/D W2D SOT23 transistor w2d part no w2d 48 sot23 w2d marking w2d marking code 10 sot23 A114 A115 C101 JESD22

    w2d sot-23

    Abstract: No abstract text available
    Text: MC74VHC1G126 Product Preview Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    PDF MC74VHC1G126 r14525 MC74VHC1G126/D w2d sot-23

    74VHC1G126

    Abstract: VHC1G126 transistor w2d w2d sot-23 diode w2d A114 A115 C101 JESD22 MC74VHC1G126
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    PDF MC74VHC1G126 MC74VHC1G126 353/SC r14525 74VHC1G126 VHC1G126 transistor w2d w2d sot-23 diode w2d A114 A115 C101 JESD22

    Axialventilatoren

    Abstract: w1g250hh
    Text: 37778-7-8811 • KO-07/07-3,25’ Printed in Germany ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen D-78112 St.Georgen D-84030 Landshut


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    PDF KO-07/07-3 D-74673 D-78112 D-84030 Axialventilatoren w1g250hh

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original
    PDF MC74VHC1G126 353/SC marking CODE W2D marking w2d

    Untitled

    Abstract: No abstract text available
    Text: MC74VHC1G126 Product Preview Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    PDF MC74VHC1G126 MC74VHC1G126 r14525 MC74VHC1G126/D

    w2d 98

    Abstract: No abstract text available
    Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit


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    PDF AS5SP256K36DQ AS5SP256K36DQ w2d 98

    SSRAM

    Abstract: AS5SP256K36
    Text: COTS PEM SSRAM AS5SP256K36 • 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 99 100 80 2 79 3 78 4 77 5 76 DQc DQc 6 75 7 74 DQc DQc 8 73 9 72 VSSQ VDDQ 10 71 11 70 DQc 12 69 DQc NC VDD 13 68 NC VSS DQd 16 65 17 64 18 63 DQd 19 62 VDDQ VSSQ 20 61 21


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    PDF AS5SP256K36 220mA 180mA 140mA 120mA 110mA 100mA 35oc/w 275mA 250mA SSRAM AS5SP256K36

    Axial fans

    Abstract: No abstract text available
    Text: 37779-7-8811 • KO-08/07-10,8’ Printed in Germany Axial fans version 07 Axial fans ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen


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    PDF KO-08/07-10 D-74673 D-78112 D-84030 Axial fans

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit


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    PDF AS5SP256K36DQ

    AS5SP256K36DQ

    Abstract: transistor w2d 850C
    Text: CO TS PEM COTS SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc.


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    PDF AS5SP256K36DQ AS5SP256K36DQ transistor w2d 850C

    SSRAM

    Abstract: AS5SP512K36
    Text: SSRAM AS5SP512K36 Plastic Encapsulated Microcircuit 18Mb, 512K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect FEATURES •          Synchronous Operation in relation to the input Clock


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    PDF AS5SP512K36 165mA, SSRAM AS5SP512K36

    Untitled

    Abstract: No abstract text available
    Text: SSRAM AS5SP512K18 A A CE1\ CE2 NC NC BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 81 82 84 83 87 85 86 89 88 91 90 92 93 95 94 96 78 4 77 5 76 NC NC 6 75 7 74 DQb DQb 8


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    PDF AS5SP512K18 250mA 290mA 220mA 270mA 185mA 240mA 120mA 200mA

    SSRAM

    Abstract: AS5SP128K36
    Text: SSRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax AS5SP128K36 Rev. 1.6 10/13 BURST CNTL. Address Registers Row Decode


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    PDF 133Mhz AS5SP128K36 A95mA SSRAM AS5SP128K36

    MS-026D

    Abstract: transistor w2a transistor w2d diode w2d 850C W2D 83
    Text: SSRAM AS5SP512K18DQ A A CE1\ CE2 NC NC BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc. Plastic Encapsulated Microcircuit 200Mhz 5.0 3.0 3.0 CONTROL BLOCK GW\ AS5SP512K18DQ Rev. 2.0 09/05 81 82 84 83 85 87 86 89 88 91


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    PDF AS5SP512K18DQ -400C AS5SP512K18DQ-30IT AS5SP512K18DQ-35IT AS5SP512K18DQ-40IT 512Kx18, 1050C) MS-026D transistor w2a transistor w2d diode w2d 850C W2D 83

    AS5SP512K36DQ

    Abstract: No abstract text available
    Text: SSRAM A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A AS5SP512K36DQ Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns 81 84 82 83 85 87 86 89 88


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    PDF AS5SP512K36DQ AS5SP512K36DQ

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0


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    PDF AS5SP256K36DQ MS026-D/BHA

    SSRAM

    Abstract: AS5SP512K18
    Text: SSRAM AS5SP512K18 A A CE1\ CE2 NC NC BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 81 82 84 83 87 85 86 89 88 91 90 92 3 78 4 77 5 76 NC NC 6 75 7 74 DQb DQb 8 73 9 72 VSSQ


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    PDF AS5SP512K18 200M2 250mA 290mA 220mA 270mA 185mA 240mA 120mA 200mA SSRAM AS5SP512K18

    SSRAM

    Abstract: AS5SP128K32
    Text: SSRAM 81 84 82 83 85 87 86 89 88 91 90 92 93 95 96 94 97 100 1 80 DQc DQc VDDQ VSSQ 2 79 3 78 4 77 5 76 DQc DQc 6 75 7 74 DQc DQc 8 73 9 72 VSSQ VDDQ 10 71 11 70 DQc 12 69 DQc NC 13 68 VDD 15 NC VSS DQd 16 65 17 64 18 63 DQd 19 62 VDDQ VSSQ 20 61 21 60 VSSQ


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    PDF AS5SP128K32 SSRAM AS5SP128K32

    transistor w2d

    Abstract: transistor w2a 1050C 850C
    Text: COTS PEM AS5SP512K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array


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    PDF AS5SP512K36DQ MS026-D/BHA transistor w2d transistor w2a 1050C 850C