29070* intel
Abstract: No abstract text available
Text: Intel Wireless Flash Memory W18 128-Mbit W18 Family Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed — 20 ns Page mode read speed
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128-Mbit
128-bit
32Mbit
64Mbit
128Mbit
29070* intel
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PDF
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01171
Abstract: 29070* intel
Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed
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Original
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28F320W18,
28F640W18,
28F128W18
128-bit
32Mbit
64Mbit
128Mbit
01171
29070* intel
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PDF
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W18 90
Abstract: H1061 28F128W18 28F320W18 28F640W18 Transistor p1E 29070* intel
Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed
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Original
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28F320W18,
28F640W18,
28F128W18
128-bit
32Mbit
64Mbit
128Mbit
W18 90
H1061
28F128W18
28F320W18
28F640W18
Transistor p1E
29070* intel
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PDF
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Untitled
Abstract: No abstract text available
Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit — 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed
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Original
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28F320W18,
28F640W18,
28F128W18
128-Mbit
56-Ball
32-Mbit)
64-Mbit)
128-Mbit)
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PDF
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28F128W18
Abstract: 28F320W18 28F640W18 intel DOC matrix 7x8
Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit — 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed
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Original
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28F320W18,
28F640W18,
28F128W18
128-Mbit
56-Ball
32-Mbit)
64-Mbit)
128-Mbit)
28F128W18
28F320W18
28F640W18
intel DOC
matrix 7x8
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PDF
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740-0007
Abstract: 29070* intel
Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz with zero Wait state — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed
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Original
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28F320W18,
28F640W18,
28F128W18
128-bit
64-bits
56-Ball
740-0007
29070* intel
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PDF
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Untitled
Abstract: No abstract text available
Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz with zero Wait state — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed
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Original
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28F320W18,
28F640W18,
28F128W18
128-bit
64-bits
and031
32-Mbit
64-Mbit
128-Mbit
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PDF
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strataflash 512mbit
Abstract: FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F
Text: Numonyx Wireless Flash Memory W18 Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed — 20 ns Page mode read speed
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128-Bit
x32SH
x16SB
x16/x32
strataflash 512mbit
FLASH MEMORY 38F
FLASH MEMORY 48F
transistor w18 57 small
Intel SCSP
transistor R13 P2F
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PDF
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740-0007
Abstract: 29070* intel
Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed
|
Original
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28F320W18,
28F640W18,
28F128W18
56-Ball
32-Mbit)
64-Mbit)
128-Mbit)
740-0007
29070* intel
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PDF
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3132* intel
Abstract: No abstract text available
Text: Intel Wireless Flash Memory W18 with A/D Multiplexed I/O Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 54 MHz — 60 ns Initial Access Read Speed — 14 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed
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Original
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28-Jul-2006
313272-002US
3132* intel
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PDF
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PH28F640W18BE60
Abstract: PH28F640W18BD60 PH28F640W18TE60 PH28F320W18BE60 GE28F640W18TE60 PH28F640W18 GE28F640W18BD60 GE28F640W18TD60 28F128W18 28F320W18
Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed
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Original
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28F320W18,
28F640W18,
28F128W18
128-bit
CapabiD60
GE28F320W18TE60
GE28F320W18BE60
PH28F320W18TD60
PH28F320W18BD60
PH28F320W18TE60
PH28F640W18BE60
PH28F640W18BD60
PH28F640W18TE60
PH28F320W18BE60
GE28F640W18TE60
PH28F640W18
GE28F640W18BD60
GE28F640W18TD60
28F128W18
28F320W18
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PDF
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29070* intel
Abstract: transistor w18 57 small
Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed
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Original
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28F320W18,
28F640W18,
28F128W18
56-Ball
32-Mbit)
64-Mbit)
128-Mbit)
29070* intel
transistor w18 57 small
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PDF
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PH28F640W18BD60
Abstract: PH28F128W18BD60 PH28F640W18BE60 PH28F320W18BD60 29070* intel ph28f128w18td60
Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed
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Original
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28F320W18,
28F640W18,
28F128W18
128-bit
GE28F320W18TD60
GE28F320W18BD60
GE28F320W18TE60
GE28F320W18BE60
PH28F320W18TD60
PH28F320W18BD60
PH28F640W18BD60
PH28F128W18BD60
PH28F640W18BE60
29070* intel
ph28f128w18td60
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PDF
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28F128W18
Abstract: 28F320W18 28F640W18 intel DOC
Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed
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Original
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28F320W18,
28F640W18,
28F128W18
128-bit
64-bits
32Mbit
64Mbit
128Mbit
28F128W18
28F320W18
28F640W18
intel DOC
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PDF
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29070* intel
Abstract: No abstract text available
Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz with zero Wait state — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed
|
Original
|
28F320W18,
28F640W18,
28F128W18
128-bit
64-bits
and171
56-Ball
29070* intel
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PDF
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Stacked 4MB NOR FLASH & SRAM with AD multiplexed
Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
Text: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed
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Original
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x32SH
x16SB
x16/x32
Stacked 4MB NOR FLASH & SRAM with AD multiplexed
FLASH MEMORY 38F
FLASH MEMORY 48F
Numonyx admux
48F4400
numonyx 106 ball
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PDF
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MAGNETIC HEAD circuit
Abstract: magnetic vertical water level sensor 77G DIODE water level indicator asbestos safety data sheet WATER LEVEL CONTROLLER water level controller circuit diagram circuit diagram water level sensor THC2 GLUE
Text: SERIES Hot Melt Glue Detector LA-T EZ-10 TH Water Detection Wire Flaw Detection Hot Melt Glue Detection PARTICULAR USE SENSORS TH Quick, Reliable and Non-contact Detection of Hot Melt Glue Marked Miniature Sensor Head Wide Sensing Area Spot type The sensor head can be mounted in a congested and tight place as it has a miniature size of W18ןH33ןD23mm.
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Original
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EZ-10
W18H33D23mm.
300mm,
TH-12)
UA-11
SUS304)
MAGNETIC HEAD circuit
magnetic vertical water level sensor
77G DIODE
water level indicator
asbestos safety data sheet
WATER LEVEL CONTROLLER
water level controller circuit diagram
circuit diagram water level sensor
THC2
GLUE
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PDF
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TMS320C6711 DSK module
Abstract: OPA2132 TMS320C6711 DSK kit circuit diagram ADS8364EVM SN74CBT3257 TPS2104 ADS8364 OPA2350 TMS320C6711 DSK manual
Text: ADS8364EVM User’s Guide April 2002 Data Acquisition Products SLAU084 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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Original
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ADS8364EVM
SLAU084
TPS2104D
ADS8364
30-Jan-2002
TMS320C6711 DSK module
OPA2132
TMS320C6711 DSK kit circuit diagram
ADS8364EVM
SN74CBT3257
TPS2104
OPA2350
TMS320C6711 DSK manual
|
PDF
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OPA2132
Abstract: No abstract text available
Text: ADS8364EVM User’s Guide April 2002 Data Acquisition Products SLAU084 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
|
Original
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ADS8364EVM
SLAU084
TPS2104D
ADS8364
30-Jan-2002
OPA2132
|
PDF
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Untitled
Abstract: No abstract text available
Text: Lproauctit One. 'jeis.eu 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF230 (SILICON) The RF Line 1.5 W -90MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTORS NPN SILICON . . designed for 12.5 Volt, mid-band targe-signal amplifier applications in industrial and commercial FM equipment operating in the
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Original
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MRF230
-90MHz
90MHz
2S-380
56-5BQ-S5-3B
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PDF
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IPC-6012
Abstract: R1651 R165-1 SN65HVD22 SN65HVD22D CRCW1206000F CRCW1206101F IPC-A-600 SLLU057
Text: SN65HVD22EVM USER’S GUIDE March 2003 High-Performance Linear/Interface Products SLLU057 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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Original
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SN65HVD22EVM
SLLU057
27-Feb-2002
IPC-6012
R1651
R165-1
SN65HVD22
SN65HVD22D
CRCW1206000F
CRCW1206101F
IPC-A-600
SLLU057
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PDF
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w18 transistor
Abstract: marking W18 TRANSISTOR w18 BFP181TW SOT W18
Text: BFP181TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain
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Original
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BFP181TW
D-74025
25-Oct-96
w18 transistor
marking W18
TRANSISTOR w18
BFP181TW
SOT W18
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PDF
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TS PQ4 24
Abstract: TM4C129LNCZAD
Text: mikromedia 5 for Tiva Amazingly compact, all-on-a-single-pcb development board that carries 5’’ TFT Touch Screen and lots of multimedia peripherals, all driven by a powerful TM4C129L X NCZAD TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having
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Original
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TM4C129L
TS PQ4 24
TM4C129LNCZAD
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PDF
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Untitled
Abstract: No abstract text available
Text: wmmt BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features
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OCR Scan
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BFP181T/BFP181TW/BFP181TRW
BFP181TW
BFP181TRW
BFP181T
20-Jan-99
BFP181T/BFP1hay
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PDF
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