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    W18 PACKAGE Search Results

    W18 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    W18 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    W18 Package Cypress Semiconductor Ceramic Windowed Dual-In-Line Packages Original PDF

    W18 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLASH MEMORY 38F

    Abstract: 88-ball 28F320W18 38F1020W0YBQ0 38F1020W0YTQ0
    Text: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ0, 38F1020W0YBQ0) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


    Original     		PDF 32-Mbit 38F1020W0YTQ0, 38F1020W0YBQ0) 32-KWord FLASH MEMORY 38F 88-ball 28F320W18 38F1020W0YBQ0 38F1020W0YTQ0

    Intel SCSP

    Abstract: strataflash retention 252635 7900 Intel intel sram W18 Package
    Text: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ1, 38F1020W0YBQ1) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


    Original     		PDF 32-Mbit 38F1020W0YTQ1, 38F1020W0YBQ1) 32-KWord B5102-01 Intel SCSP strataflash retention 252635 7900 Intel intel sram W18 Package

    PF38F1030W0Y

    Abstract: PF38F2030 PF38F 3117* intel
    Text: Intel Wireless Flash Memory W18 128-Mbit W18 Family with Synchronous PSRAM Product Features Datasheet Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option — Bottom or Top Flash Parameter


    Original     		PDF 128-Mbit 32-Mbit PF38F1030W0Y PF38F2030 PF38F 3117* intel

    38F1020W0YBQ0

    Abstract: 28F320W18 38F1020W0YTQ0 flash "high temperature data retention" mechanism
    Text: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ0, 38F1020W0YBQ0) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


    Original     		PDF 32-Mbit 38F1020W0YTQ0, 38F1020W0YBQ0) 32-KWord 38F1020W0YBQ0 38F1020W0YBQ0 28F320W18 38F1020W0YTQ0 flash "high temperature data retention" mechanism

    Numonyx admux

    Abstract: PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h
    Text: Numonyx Wireless Flash Memory W18 SCSP 128-Mbit W18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option


    Original     		PDF 128-Mbit 128-Mbit 32-Mbit x32SH x16SB x16/x32 Numonyx admux PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h

    29070* intel

    Abstract: No abstract text available
    Text: Intel Wireless Flash Memory W18 128-Mbit W18 Family Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed — 20 ns Page mode read speed


    Original     		PDF 128-Mbit 128-bit 32Mbit 64Mbit 128Mbit 29070* intel

    28F320W18

    Abstract: 32W18 38F1020W0YBQ0 38F1020W0YTQ0 252635
    Text: 32-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 8-Mbit SRAM StackedChip Scale Package 38F1020W0YTQ0, 38F1020W0YBQ0 Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


    Original     		PDF 32-Mbit 38F1020W0YTQ0, 38F1020W0YBQ0 32-KWord 28F320W18 32W18 38F1020W0YBQ0 38F1020W0YTQ0 252635

    W18 88

    Abstract: FLASH MEMORY 38F Intel SCSP FLASH MEMORY 48F intel 24024
    Text: Intel Wireless Flash Memory W18/W30 SCSP 128-Mbit WQ Family with Asynchronous SRAM Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each


    Original     		PDF W18/W30 128-Mbit --32-Kword W18/30 128W18 128W18 128W30 128W30 64PSRAM W18 88 FLASH MEMORY 38F Intel SCSP FLASH MEMORY 48F intel 24024

    01171

    Abstract: 29070* intel
    Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 128-bit 32Mbit 64Mbit 128Mbit 01171 29070* intel

    W18 90

    Abstract: H1061 28F128W18 28F320W18 28F640W18 Transistor p1E 29070* intel
    Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 128-bit 32Mbit 64Mbit 128Mbit W18 90 H1061 28F128W18 28F320W18 28F640W18 Transistor p1E 29070* intel

    Untitled

    Abstract: No abstract text available
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit — 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 128-Mbit 56-Ball 32-Mbit) 64-Mbit) 128-Mbit)

    28F128W18

    Abstract: 28F320W18 28F640W18 intel DOC matrix 7x8
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit — 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 128-Mbit 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 28F128W18 28F320W18 28F640W18 intel DOC matrix 7x8

    740-0007

    Abstract: 29070* intel
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz with zero Wait state — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 128-bit 64-bits 56-Ball 740-0007 29070* intel

    Untitled

    Abstract: No abstract text available
    Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coeficient of the on-state


    Original     		PDF MIXA20W1200MC 20110304b

    strataflash 512mbit

    Abstract: FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F
    Text: Numonyx Wireless Flash Memory W18 Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed — 20 ns Page mode read speed


    Original     		PDF 128-Bit x32SH x16SB x16/x32 strataflash 512mbit FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F

    740-0007

    Abstract: 29070* intel
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 740-0007 29070* intel

    128W18

    Abstract: 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp
    Text: 128-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 32-Mbit PSRAM Stacked-CSP Family Datasheet Product Features • ■ ■ ■ Flash Architecture — Flexible, Multiple-Partition, DualOperation: Read-While-Write / ReadWhile-Erase — 32 Partitions, 4 Mbits each


    Original     		PDF 128-Mbit 32-Mbit --32-Kword 128W18 RD48F3000W0YBQ0 RD48F3000W0YTQ0 128W18 32PSRAM RD38F3040W0YBQ0 RD38F3040W0YTQ0 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp

    3132* intel

    Abstract: No abstract text available
    Text: Intel Wireless Flash Memory W18 with A/D Multiplexed I/O Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 54 MHz — 60 ns Initial Access Read Speed — 14 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed


    Original     		PDF 28-Jul-2006 313272-002US 3132* intel

    pcb diagram welding inverter

    Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
    Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive


    Original     		PDF MIXA20W1200MC 20091002a pcb diagram welding inverter CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM

    PH28F640W18BE60

    Abstract: PH28F640W18BD60 PH28F640W18TE60 PH28F320W18BE60 GE28F640W18TE60 PH28F640W18 GE28F640W18BD60 GE28F640W18TD60 28F128W18 28F320W18
    Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 128-bit CapabiD60 GE28F320W18TE60 GE28F320W18BE60 PH28F320W18TD60 PH28F320W18BD60 PH28F320W18TE60 PH28F640W18BE60 PH28F640W18BD60 PH28F640W18TE60 PH28F320W18BE60 GE28F640W18TE60 PH28F640W18 GE28F640W18BD60 GE28F640W18TD60 28F128W18 28F320W18

    28F640w18t

    Abstract: flash "high temperature data retention" mechanism FLASH MEMORY 38F INTEL wireless FLASH MEMORY DATASHEETS 28F640W18 28F640W30 64WQ 251216 1.8V SRAM
    Text: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ Flash Architecture — Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — Blocks: 32-Kword Main, 4-Kword Parameter — Top/Bottom Parameter - single flash die


    Original     		PDF W18/W30 32-Kword W18/W30 64W18 RD38F2020W0YTQ0 64W30 RD38F2020W0YBQ0 RD38F2020W0ZBQ0 RD38F2020W0ZTQ0 28F640w18t flash "high temperature data retention" mechanism FLASH MEMORY 38F INTEL wireless FLASH MEMORY DATASHEETS 28F640W18 28F640W30 64WQ 251216 1.8V SRAM

    29070* intel

    Abstract: transistor w18 57 small
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 29070* intel transistor w18 57 small

    PH28F640W18BD60

    Abstract: PH28F128W18BD60 PH28F640W18BE60 PH28F320W18BD60 29070* intel ph28f128w18td60
    Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 128-bit GE28F320W18TD60 GE28F320W18BD60 GE28F320W18TE60 GE28F320W18BE60 PH28F320W18TD60 PH28F320W18BD60 PH28F640W18BD60 PH28F128W18BD60 PH28F640W18BE60 29070* intel ph28f128w18td60

    Untitled

    Abstract: No abstract text available
    Text: CY7C63411/12/13 TfffFnnmrm.v CY7C63511/12/13 ,/CIPRESS 21.0 Package Diagrams 48-Lead Shrunk Small Outline Package 048 40-Lead 600-Mil Molded DIP P17 dimension ; in inches min, MAX, 32 CY7C63411/12/13 CY7C63511/12/13 21.0 Package Diagrams (continued) 40-Lead (600-Mil) Windowed CerDIP W18


    OCR Scan     		PDF CY7C63411/12/13 CY7C63511/12/13 48-Lead 40-Lead 600-Mil) 48-Lead