N5256AW12
Abstract: N5256AW10 N5260-60003 N5256AW15 N5257AR10 N5260
Text: Agilent Technologies N5256/7/8A Millimeter-wave Modules User’s Guide Use this manual with the following document: Technical Overview 5989-7620EN Millimeter Modules N5256AW01, W02, W03, W05, W06, W08, W10, W12, W15, W22, X10, X12, N5257AR02, R03, R05, R06, R08, R10, R12, R15, R22
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N5256/7/8A
5989-7620EN
N5256AW01,
N5257AR02,
N5258AD02,
N5256-90001
N5256AW12
N5256AW10
N5260-60003
N5256AW15
N5257AR10
N5260
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bwz06
Abstract: BZW06P10 diode bzw06-14 BZW06 7V0 BZW06P33B bzw06p376 BZW06P
Text: BZW06-5V8,B/376,B BZW06P5V8,B/376,B TRANSILTM FEATURES PEAK PULSE POWER= 600 W @ 1ms STAND-OFF VOLTAGE RANGE : From 5V8 to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED F126 Plastic DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transients makes them particularly
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BZW06-5V8
B/376
BZW06P5V8
bwz06
BZW06P10
diode bzw06-14
BZW06 7V0
BZW06P33B
bzw06p376
BZW06P
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS100R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS100R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
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BD3 diode
Abstract: 6n06e k4366
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS100B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
BD3 diode
6n06e
k4366
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N67 ferrite
Abstract: ITACOIL E2543 E25x13x7 L6562A ITACOIL E2543/E FUSE T4A 250v fuse T4A T4A 250V MBB0207
Text: EVL6562A-TM-80W 80 W high performance transition mode PFC evaluation board Data Brief Features • Line voltage range: 88 to 265 VAC ■ Minimum line frequency fL : 47 Hz ■ Regulated output voltage: 400 V ■ Rated output power: 80 W ■ Maximum 2fL output voltage ripple: 10 V pk-pk
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EVL6562A-TM-80W
L6562A
L6562,
L6562A
N67 ferrite
ITACOIL
E2543
E25x13x7
ITACOIL E2543/E
FUSE T4A 250v
fuse T4A
T4A 250V
MBB0207
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transistor w06
Abstract: marking code w06 transistor CBTD3306 CBTD3306D CBTD3306PW w06 transistor marking W06
Text: CBTD3306 Dual bus switch with level shifting Rev. 04 — 25 March 2010 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.
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CBTD3306
CBTD3306
JESD78B
JESD22-A114F
JESD22-C101E
transistor w06
marking code w06 transistor
CBTD3306D
CBTD3306PW
w06 transistor
marking W06
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E25x13x7
Abstract: No abstract text available
Text: EVL6562A-TM-80W 80 W high performance transition mode PFC evaluation board Data Brief Features • Line voltage range: 88 to 265 VAC ■ Minimum line frequency fL : 47 Hz ■ Regulated output voltage: 400 V ■ Rated output power: 80 W ■ Maximum 2fL output voltage ripple: 10 V pk-pk
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EVL6562A-TM-80W
L6562A
E25x13x7
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W04 bridge rectifier
Abstract: S1NB60 55 KBPC3510 S1NB60 70 S1NB60 43 w08 bridge rectifier S1ZB60 W005S DI101 DI102
Text: SEMICONDUCTORS DIODES, Bridge Rectifier A range of surface mount and through hole bridge rectifiers offering current ratings from 0.8 Amp to 35 Amp. 0.8 Amp VRRM V 1N 1Z Supplied taped and reeled. Manufacturer: Shindengen Device & Order Code IFAV (A) at Tamb (°C)
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S1ZB20
S1ZB60
S1NB60
KBPC3502
KBPC3501
KBPC35005
KBPC2501
KBPC25005
W04 bridge rectifier
S1NB60 55
KBPC3510
S1NB60 70
S1NB60 43
w08 bridge rectifier
S1ZB60
W005S
DI101
DI102
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Untitled
Abstract: No abstract text available
Text: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current
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UL94V-O
MIL-STD-202,
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DIODE w04
Abstract: W005 W02 diode
Text: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop
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UL94V-O
MIL-STD-202,
DIODE w04
W005
W02 diode
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Bridge Rectifiers
Abstract: transistor w04 W08 transistor DIODE w04 transistor w10 transistor w02 w08 bridge rectifier W005
Text: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop
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UL94V-O
MIL-STD-202,
Bridge Rectifiers
transistor w04
W08 transistor
DIODE w04
transistor w10
transistor w02
w08 bridge rectifier
W005
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DIODE w04
Abstract: W005
Text: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current
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UL94V-O
MIL-STD-202,
DIODE w04
W005
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com W005 - W10 SILICON BRIDGE RECTIFIERS
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FB3206
Abstract: No abstract text available
Text: Technische Information / technical information FS50R06YE3 IGBT-Module IGBT-modules Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2 !"BB32 #1322E14DDD F3FB2 3"BB326B43
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FS50R06YE3
1322E14DD
BB326
223DB
B73DEB2
2313B
B73DE14DD
BB326134
1231423567896A3B326C4DEF
FB3206
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Y6W 35
Abstract: No abstract text available
Text: Technische Information / technical information FP30R06YE3 IGBT-Module IGBT-modules Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2 !"BB32 #1322E14DDD F3FB2 3"BB326B43
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FP30R06YE3
1322E14DD
BB326
223DB
B73DEB2
2313B
B73DE14DD
BB326134
1231423567896A3B326C4DEF
Y6W 35
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CBD3306
Abstract: sot902 marking w06 D306 tssop8 CBTD3306
Text: CBTD3306 Dual bus switch with level shifting Rev. 8 — 1 May 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.
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CBTD3306
CBTD3306
JESD78B
JESD22-A114F
JESD22-C101E
CBTD3306D
CBD3306
sot902
marking w06
D306 tssop8
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CBTD3306
Abstract: No abstract text available
Text: CBTD3306 Dual bus switch with level shifting Rev. 8 — 1 May 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.
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CBTD3306
CBTD3306
JESD78B
JESD22-A114F
JESD22-C101E
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D306 transistor
Abstract: CBTD3306
Text: CBTD3306 Dual bus switch with level shifting Rev. 7 — 3 January 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.
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CBTD3306
CBTD3306
JESD78B
JESD22-A114F
JESD22-C101E
CBTD3306D
D306 transistor
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W06A DIODE
Abstract: 1S2591 W06B W06C W06A R-1 GREEN CATHODE diode I60r TL2512 W06 DIODE Hitachi W06C
Text: -raregffSHFrri ach i /ïuPTüELhc i kon i os >- - • — \ 6 8C 0 97 80 Y - Ù/~ / =fr— K ( General -Use Rectifier Diode W06 "tfl D E ] MMTLEDS 000^700 T V RRM : 50V~200V 4 | ' >F(AV): 0.75A «S3.0MAX (0 . 1 2 ) 62MIN (2.44) 29MIN 5.0 MAX _29MIN_ ~ ( 1 .1 4 ) ~ T ( ^ 2 p
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OCR Scan
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62MIN
29MIN
29MIN_
W06AI50V)
W06BOOOV)
1S2591
100x180x1
10mni
22/isec
W06A DIODE
1S2591
W06B
W06C
W06A
R-1 GREEN CATHODE diode
I60r
TL2512
W06 DIODE
Hitachi W06C
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Untitled
Abstract: No abstract text available
Text: BRIDGE RECTIFIERS PLASTIC MATERIAL U SED C A R R IE S UL 94V-0 OPERATING T EM PERA TU RE RANGE : -55 "C to +125 °C STO RAGE T EM PER A T U R E RANGE : -55'C tO+150“C TYPE Maximum Peak Reverse Voltage 1.5 AMPERES/RC-2 CASE 20 W005L W01 L W02 L W04 L W06 L
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OCR Scan
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W005L
DO-201
DO-41
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PBP205
Abstract: GBPC602 GBPC802 W04 SMD KBP153 MB-104 RD154 PBP152 DB-102M GBPC810
Text: BRIDGE CROSS REFERENCE GEN. INST. DIODES INC LITE ON RECTRON DB101GM DB102GM DB103GM DB104GM DB105GM DB106GM DB107GM DF005S DF01S DF02S DF04S DF06S DF08S DF01S SDF005 SDF01 SDF02 SDF04 SDF06 SDF08 SDF10 PBDF101S PBDF102S PBDF103S PBDF104S PBDF105S PBDF106S
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OCR Scan
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DF005S
DF01S
DF02S
DF04S
DF06S
DF08S
DF005M
DF01M
DF02M
PBP205
GBPC602
GBPC802
W04 SMD
KBP153
MB-104
RD154
PBP152
DB-102M
GBPC810
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Transistor W06
Abstract: transistor RFP25N05 FP25N
Text: JJÌ H A R R I RFP25N05 S A u g u s t 1991 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package T O -2 2 0 A B TOP VIEW • 25A, 50V • rDS(on) = 0 .047H • UIS SOA Rating Curve (Single Pulse) • SOA is Power-Dissipation Limited
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OCR Scan
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RFP25N05
RFP25N05
FP25N
Transistor W06
transistor RFP25N05
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KBL06 AC
Abstract: KBP12 KBPC806G KBL005G kbl06g
Text: V V- V ¡s 5 ¡v v \ - \-é>^ •A\ V ' WAFAD001 “» «j ''"tu«: t / -, /7 E 1 27862 ;.? M V GLASS PASSIVATED BRIDGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE TYPE Maximum Forward Voltage @ 2 5 t Ta Maximum Peak Reverse Voltage Maximum Average Rectified Current
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OCR Scan
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WAFAD001
-55fc
AMPERE/WOM/RB-15
W005G
2W005G
AMPERE/MB-35
KBL06 AC
KBP12
KBPC806G
KBL005G
kbl06g
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Untitled
Abstract: No abstract text available
Text: BRIDGE RECTIFIERS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING TEMPERATURE RANGE : -55 °C to +125 "C STORAGE TEMPERATURE RANGE : -55 °C to+150°C Maximum Maximum Reverse Forward Peak Current Surge Current @ PR V @ 8.3ms @25 °C T a Superim posed lFM Surge
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OCR Scan
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RS101
RS102
RS103
RS104
RS105
RS106
RS107
DO-201
DO-41
0Q007L
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