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    W SA 45A DIODE Search Results

    W SA 45A DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    W SA 45A DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN9321

    Abstract: AN9322 RF1S45N02L RF1S45N02LSM RF1S45N02LSM9A RFP45N02L
    Text: RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes


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    PDF RFP45N02L, RF1S45N02L, RF1S45N02LSM RF1S45N02LSM AN9321 AN9322 RF1S45N02L RF1S45N02LSM9A RFP45N02L

    45n06

    Abstract: AN9321 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334 fp45n 45N06LE
    Text: RFP45N06LE, RF1S45N06LESM Data Sheet 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization


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    PDF RFP45N06LE, RF1S45N06LESM 45n06 AN9321 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334 fp45n 45N06LE

    tt 4458

    Abstract: AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


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    PDF RFG45N06, RFP45N06, RF1S45N06SM TA49028. tt 4458 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456

    Untitled

    Abstract: No abstract text available
    Text: COMCHIP Axial Lead Transient Voltage Suppressor SMD Diodes Specialist SA5V0-G Thru. SA191-G Series Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-15 0.033 0.84 0.028(0.71) -Glass passivated chip. 1.000(25.40)


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    PDF SA191-G DO-15 -500W QW-BTV16

    tt 4458

    Abstract: mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


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    PDF RFG45N06, RFP45N06, RF1S45N06SM TA49028. tt 4458 mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET

    1E14

    Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3
    Text: FSPYC264R, FSPYC264F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPYC264R, FSPYC264F 1E14 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3

    Untitled

    Abstract: No abstract text available
    Text: Axial Lead Transient Voltage Suppressor SA5V0-HF Thru. SA191-HF Series Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Halogen Free DO-15 Features -Glass passivated chip. 1.000 25.40 MIN. 0.033(0.84) 0.028(0.71) -Low leakage.


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    PDF SA191-HF DO-15 -500W QW-JTV12

    Untitled

    Abstract: No abstract text available
    Text: Axial Lead Transient Voltage Suppressor SA5V0-G Thru. SA191-G Series Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-15 -Glass passivated chip. -Low leakage. 1.000 25.40 MIN. -500W peak pulse power capability with a


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    PDF SA191-G DO-15 -500W MIL-STD202ppressor QW-BTV16

    TB334

    Abstract: 76437S AN9321 AN9322 HUF76437P3 HUF76437S3S HUF76437S3ST
    Text: HUF76437P3, HUF76437S3S Data Sheet November 1999 File Number 4709.2 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76437P3 HUF76437S3S


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    PDF HUF76437P3, HUF76437S3S O-220AB O-263AB HUF76437P3 TB334 76437S AN9321 AN9322 HUF76437P3 HUF76437S3S HUF76437S3ST

    Untitled

    Abstract: No abstract text available
    Text: HUFA76437P3, HUFA76437S3S TM Data Sheet November 2000 File Number 4984 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76437P3 HUFA76437S3S


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    PDF HUFA76437P3, HUFA76437S3S O-220AB O-263AB HUFA76437P3 O-220AB O-263AB 76437P 76437S

    Untitled

    Abstract: No abstract text available
    Text: Axial Lead Transient Voltage Suppressor SA5V0-G Thru. SA191-G Series Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-15 -Glass passivated chip. 0.033 0.84 0.028(0.71) -Low leakage. 1.000(25.40) MIN. -500W peak pulse power capability with a


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    PDF SA191-G DO-15 -500W MIL-STD202, QW-BTV16

    20A Diode axial leads

    Abstract: avalanche diode diode 1n60 DIODE 1n56 sl1021b
    Text: Introduction to Circuit Protection Transientology Overvoltage Suppression Facts and Selection Guide Gas Plasma OVP/GDT Selection Guide Family name OMEGA BETA ALPHA DELTA Performance Level Standard High Ultra High Series Name SL1024B SL1024A SL1011A SL1011B


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    PDF SL1024B SL1024A SL1011A SL1011B SL1021A SL1021B SL1002A SL1003A SL1122A SL1221 20A Diode axial leads avalanche diode diode 1n60 DIODE 1n56

    ae 45a

    Abstract: No abstract text available
    Text: ERG75 45A • w in -a : Outline Drawings FAST RECOVERY DIODE Features • T V —?*— Pl aner chip • Soft recovery type • Stud mounted ■ E 3 i£ s: A p p lica tio n s • Switching power supplies ifc'fJl' • • ■iO'f&SSSiiJfEWiB Free-wheel diode


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    PDF ERG75 ae 45a

    Untitled

    Abstract: No abstract text available
    Text: 2SK1437 A P A d v a n c e d P e r f o r m a n c e S e rie s 2077 VDSS= 1 0 0 V N Channel Power M O S F E T F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A b so lu te M axim um R atin g s at Ta - 25°C Drain to Source Voltage


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    PDF 2SK1437 10/iS, 2SK1437 7151JN X-6618

    2SK1437

    Abstract: No abstract text available
    Text: Ordering num ber:EN3 5 7 5 _ 2SK1437 No.3575 N-Channel MOS Silicon FET SA\YO Very High-Speed Switching Applications 1 F eatures •Low ON-state resistance. ■Very high-speed switching. • Converters. A bsolute Maximum Ratings at Ta = 25°C Drain to Source Voltage


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    PDF EN3575 2SK1437

    Untitled

    Abstract: No abstract text available
    Text: SA SERIES TSC S Transient Voltage Suppressor Diodes Voltage Range 5.0 to 170 Volts 500 Watts Peak Power 1.0 Watt Steady State DO-15 Features ❖ •4<• -$• Plastic package has Underwriters Laboratory Fiammability Classification 94V-0 500W surge capability at 10 X 10us waveform, duty cycle:


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    PDF DO-15 flfi3554b

    se 617

    Abstract: US60A SF-150 USR80 US12 US150A US200A US45A US50A US70A
    Text: RECTIFIER ASSEMBLIES ^ 2f2u~ A High Voltage Stacks, ,125Am p to 1 Amp, uskiboa Standard and Fast Recovery FEATURES • Controlled Avalanche Characteristics • Recovery Tim es: to 500ns • Transfer Molded fo r Voidless E ncapsulation • H igh Forward and Reverse Surge C ap a b ility


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    PDF US200A USR12-USR180A 500ns se 617 US60A SF-150 USR80 US12 US150A US45A US50A US70A

    SA5858

    Abstract: 50467 SA10 SA10A SA11 SA11A SA12 SA12A SA13 SA13A
    Text: I MCP SA5.0 - SA170A SERIES VKü TRANSIENT VOLTAGE SUPPRESSOR INCORPORATED Features 500 W atts Peak Pulse Power Dissipation Voltage Range 5.0 - 170 Volts 1 W a tt Steady State Power Dissipation @ T L = 7 5 °C , Lead le n g th = 9 .5 m m Constructed with Glass Passivated Die


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    PDF DO-15 MIL-STD-202 SA160A SA170 SA170A SA5858 50467 SA10 SA10A SA11 SA11A SA12 SA12A SA13 SA13A

    H-17

    Abstract: IRHE7230 IRHE8230
    Text: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED IRHE7S30 HEXFET TRANSISTORS IRHE823G N-CHANNEL MEGA RAD HARD 200 Volt, 0.40Í2, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


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    PDF 1x106 1x105 H-109 IRHE7230, IRHE8230 H-110 H-17 IRHE7230

    USR Series

    Abstract: US60A US45A US50A US70A SB600
    Text: S ^ 7 f IEIl A S S H JE ? , * High Voltage Stacks, .125 Amp to 1 Amp, Standard and Fast Recovery USR12-uI^180A FEATU RES D ESCR IPTIO N • • • • • • This series of High Voltage, Medium Current Stacks are assembled from herm etically sealed, controlled avalanche


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    PDF US12-US200A USR12-USR180A 500ns USR Series US60A US45A US50A US70A SB600

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 10^7250 0G23314 T O SH IB A FIELD EFFECT T RA N SIST O R 2SK1542 TbT SILICO N N C H A N N E L M O S TYPE L2-;r-M O SIV 2 S K 1 542 INDUSTRIAL APPLICATIONS H IGH SPEED SW IT C H IN G APPLICATION S. RELA Y DRIVE, M O T O R D RIV E A N D D C -D C C O N V ER TER APPLICATION S.


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    PDF 0G23314 2SK1542 15mii 100//A O-220SM Q023b44

    SA10

    Abstract: SA10A SA11 SA11A SA12 SA12A SA170 442 TVS marking code
    Text: is TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SA SERIES 500 Watts Transient Voltage Suppressor DO-15 .140 3.6 .104(2.6) Features <{> 1.0 (25.4) MIN. DIA. P lastic p a c k a g e h a s U n d e rw rite rs L a b o rato ry .300 (7 . 6) .230 (5 .8) F ia m m a b iiity C las sific atio n 9 4 V -0


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    PDF DO-15 1000us SA10 SA10A SA11 SA11A SA12 SA12A SA170 442 TVS marking code

    76437s

    Abstract: AN9321 HUF76437P3 HUF76437S3S HUF76437S3ST TB334 n72 m 315E-3
    Text: interrii HUF76437P3, HUF76437S3S November 1999 Data Sheet File Num ber 4709.2 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JED E C TO -220AB JED E C TO -263AB SOURCE • Ultra Low On-Resistance DRAIN • rDS ON = 0 .0 1 4£i,


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    PDF O-220AB O-263AB HUF76437P3 HUF76437S3S HUF76437P3, 017i2, HUF76437P3 O-220AB 76437P 76437s AN9321 HUF76437S3S HUF76437S3ST TB334 n72 m 315E-3

    Untitled

    Abstract: No abstract text available
    Text: is TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SA SERIES 500 Watts Transient Voltage Suppressor DO-15 .140 3 .6 . 1 0 4 (2 .6 ) Features <{> 1.0 (25.4) MIN. DIA. P lastic p a c k a g e h a s U n d e rw rite rs L a b o rato ry .300 (7 . 6) .230 (5 .8) F ia m m a b iiity C las sific atio n 9 4 V -0


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    PDF DO-15