VTP9412 Search Results

VTP9412 Price and Stock

Filter by Manufacturer


Excelitas Technologies Corporation VTP9412H SENSOR PHOTODIODE 925NM 2DIP MOD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VTP9412H	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

VTP9412 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
VTP9412		PerkinElmer Optoelectronics	VTP Process Photodiode		Original	PDF
VTP9412		EG&G	FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes		Scan	PDF
VTP9412		EG&G Vactec	VTP Process Photodiodes		Scan	PDF
VTP9412		EG&G Vactec	VTP Process Photodiodes		Scan	PDF

VTP9412 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
VTP9412 Abstract: No abstract text available Text: VTP Process Photodiodes VTP9412 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes	Original	PDF	VTP9412 VTP9412
Untitled Abstract: No abstract text available Text: VTP Process Photodiodes VTP9412H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes	Original	PDF	VTP9412H
Untitled Abstract: No abstract text available Text: VTP Process Photodiodes VTP9412 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes	Original	PDF	VTP9412
vtp9412h Abstract: No abstract text available Text: VTP Process Photodiodes VTP9412H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes	Original	PDF	VTP9412H vtp9412h
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	PDF	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
VTP8651 Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100 Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).	Original	PDF	VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
VTP1220FBH Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0	Original	PDF	2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H
s 9413 Abstract: VTP9412 VTP9413 Text: SLE D • SOSObD^ 0001GÛM VTP Process Photodiodes E 6 & G TÔD « V C T VTP9412, 9413 T -41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear	OCR Scan	PDF	VTP9412, T-41-51 VTP9412 VTP9413 x1012 s 9413 VTP9412 VTP9413
VTP9412 Abstract: VTP9413 Text: SbE D • 3030^0^ OOOlQôM VTP Process Photodiodes TÔG IVCT V T P 9 4 1 2, 9413 T-41-51 E 6 & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) Small area planar silicon photodiode in a recessed ceramic package. Chip is	OCR Scan	PDF	VTP9412, T-41-51 VTP9412 VTP9413 7x10-14 VTP9412 VTP9413
H0A0872-n55 Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1	OCR Scan	PDF	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
ID12 Abstract: VTP9412 Text: VT P 9 4 1 2 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceram ic package. Chip is coated w ith a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and	OCR Scan	PDF	VTP9412 ID-14 3030bCH ID12 VTP9412
Untitled Abstract: No abstract text available Text: VTP 9412 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 2D Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and	OCR Scan	PDF	VTP9412 3G30b0i