Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP8551H PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by
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VTP8551H
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silicon photodiode array
Abstract: VTP8551
Text: VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by
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VTP8551
silicon photodiode array
VTP8551
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VTP8551H
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP8551H PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by
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VTP8551H
VTP8551H
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Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by
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VTP8551
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTP8651
Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).
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VTP100
VTP8651
VTP1112
VTP4085
VTP1188S
VTP11188S
VTP1232
silicon photodiode array
VTP1012
VTP7840
VTP100
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Untitled
Abstract: No abstract text available
Text: VTP8551 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm m i t- 18 2 (4 .6 2 ) , 17 2 ( 4 . 3 7 ) r (0 .5 8 ) .0 3 9 ( 1 .0 0 ) ' .0 3 2 ( 0 .8 1 ) ( 2 .4 9 ) NOM. . ( 3 .3 0 ) •042 ( 1 .0 7 ) OPTICAL £ I r ' + ! 1 .1 6 2 ( 4 .1 1 ) Ic a t h o d e K
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VTP8551
303Gbtn
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EG*G Vactec
Abstract: optl VTP8551
Text: VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch mm 18 2 ( 4 .6 2 ) , 17 2 ( 4 . 3 7 ) r ( 0 .5 8 ) .0 3 9 ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) ( 1 .0 0 ) ' NOM. ( 2 .4 9 ) .0 3 2 ( 0 .8 1 ) *" ' O PTICA L (£ I r 1 •16 2 ( 4 .1 1 ) .1 5 2 ( 3 .3 6 ) Ì +
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VTP8551
IO-13
EG*G Vactec
optl
VTP8551
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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Untitled
Abstract: No abstract text available
Text: 5bE BOBDbO^ 0001D62 » 106 H V C T VTP Process Photodiodes V T P 8 5 5 1 , 8552 E G & G VACTEC T—41-51 PACKAGE DIMENSIONS inch mm 162 (4 .6 2 )^ 4-37 ) P ~ 172 (4.3 n*»T (0 .5 8 ) ,039 ( 1.0 0 ) ' (2.49) NOM. (3 .3 0 ) .042 (1.07) .032 (0 .8 1 ) O PTICA L £
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0001D62
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8552
Abstract: VTP8551 VTP8552 ap 437
Text: 5bE B O B Ü b O ^ D D D I D û E IDA D VTP Process Photodiodes E I VCT V T P 8 5 5 1 , 8552 G & G VACTEC T -4 1 -5 1 PACKAGE DIMENSIONS inch mm •162 (4.62) .172 (4.37)^“ (0.58) .039 ( 1 .0 0 ) ' (3.30) .042 (1.07) .032 (0.81)" (2.49) * OPTICAL Ç NOM.
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VTP8551,
T-41-51
x1012
7x101z
8552
VTP8551
VTP8552
ap 437
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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