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Excelitas Technologies Corporation VTP8551H SENSOR PHOTODIODE 925NM 2DIP MOD
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DigiKey	VTP8551H	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

VTP8551 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VTP8551		PerkinElmer Optoelectronics	VTP Process Photodiode		Original	PDF
VTP8551		EG&G	FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes		Scan	PDF
VTP8551		EG&G Vactec	VTP Process Photodiodes		Scan	PDF
VTP8551		EG&G Vactec	VTP Process Photodiodes		Scan	PDF
VTP8551H		Excelitas Technologies	Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE FAST MINI DIP PKG		Original	PDF

VTP8551 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: VTP Process Photodiodes VTP8551H PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by	Original	VTP8551H	PDF
silicon photodiode array Abstract: VTP8551 Text: VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by	Original	VTP8551 silicon photodiode array VTP8551	PDF
VTP8551H Abstract: No abstract text available Text: VTP Process Photodiodes VTP8551H PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by	Original	VTP8551H VTP8551H	PDF
Untitled Abstract: No abstract text available Text: VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch mm CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by	Original	VTP8551	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
VTP8651 Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100 Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).	Original	VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100	PDF
Untitled Abstract: No abstract text available Text: VTP8551 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm m i t- 18 2 (4 .6 2 ) , 17 2 ( 4 . 3 7 ) r (0 .5 8 ) .0 3 9 ( 1 .0 0 ) ' .0 3 2 ( 0 .8 1 ) ( 2 .4 9 ) NOM. . ( 3 .3 0 ) •042 ( 1 .0 7 ) OPTICAL £ I r ' + ! 1 .1 6 2 ( 4 .1 1 ) Ic a t h o d e K	OCR Scan	VTP8551 303Gbtn	PDF
EGG Vactec Abstract: optl VTP8551 Text: VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch mm 18 2 ( 4 .6 2 ) , 17 2 ( 4 . 3 7 ) r ( 0 .5 8 ) .0 3 9 ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) ( 1 .0 0 ) ' NOM. ( 2 .4 9 ) .0 3 2 ( 0 .8 1 ) " ' O PTICA L (£ I r 1 •16 2 ( 4 .1 1 ) .1 5 2 ( 3 .3 6 ) Ì +	OCR Scan	VTP8551 IO-13 EG*G Vactec optl VTP8551	PDF
H0A0872-n55 Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1	OCR Scan	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12	PDF
Untitled Abstract: No abstract text available Text: 5bE BOBDbO^ 0001D62 » 106 H V C T VTP Process Photodiodes V T P 8 5 5 1 , 8552 E G & G VACTEC T—41-51 PACKAGE DIMENSIONS inch mm 162 (4 .6 2 )^ 4-37 ) P ~ 172 (4.3 n*»T (0 .5 8 ) ,039 ( 1.0 0 ) ' (2.49) NOM. (3 .3 0 ) .042 (1.07) .032 (0 .8 1 ) O PTICA L £	OCR Scan	0001D62	PDF
8552 Abstract: VTP8551 VTP8552 ap 437 Text: 5bE B O B Ü b O ^ D D D I D û E IDA D VTP Process Photodiodes E I VCT V T P 8 5 5 1 , 8552 G & G VACTEC T -4 1 -5 1 PACKAGE DIMENSIONS inch mm •162 (4.62) .172 (4.37)^“ (0.58) .039 ( 1 .0 0 ) ' (3.30) .042 (1.07) .032 (0.81)" (2.49) * OPTICAL Ç NOM.	OCR Scan	VTP8551, T-41-51 x1012 7x101z 8552 VTP8551 VTP8552 ap 437	PDF
KT853 Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN	OCR Scan	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B	PDF