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Excelitas Technologies Corporation VTP8440H Photodiode \| Excelitas Technologies Sensors VTP8440H
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VTP8440 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
VTP8440		PerkinElmer Optoelectronics	VTP Process Photodiode		Original	PDF
VTP8440		EG&G	FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes		Scan	PDF
VTP8440		EG&G Vactec	VTP Process Photodiodes		Scan	PDF
VTP8440		EG&G Vactec	VTP Process Photodiodes		Scan	PDF

VTP8440 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: VTP Process Photodiodes VTP8440H PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark	Original	PDF	VTP8440H
VTP8440 Abstract: RE30 Text: VTP Process Photodiodes VTP8440 PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark	Original	PDF	VTP8440 VTP8440 RE30
ceramic photodiode case 13 Abstract: No abstract text available Text: VTP Process Photodiodes VTP8440 PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark	Original	PDF	VTP8440 ceramic photodiode case 13
Untitled Abstract: No abstract text available Text: VTP Process Photodiodes VTP8440H PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark	Original	PDF	VTP8440H
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	PDF	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
VTP8651 Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100 Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).	Original	PDF	VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Untitled Abstract: No abstract text available Text: VTP8440 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 21 Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.	OCR Scan	PDF	VTP8440 1001c, 3D30bm
VTP8440 Abstract: VTP8441 Text: SbE ]> • BOBGbG^ DGOlOfll 271 « V C T V T P 8 4 4 0 , 8441 VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 21 P la n a r s ilic o n photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear	OCR Scan	PDF	VTP8440, T-41-51 1001c, 8x1012 VTP8440 VTP8441
VACTEC INC Abstract: VTP8440 A0511 Text: VTP 8 4 4 0 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 21 Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.	OCR Scan	PDF	VTP8440 3030b0^ VACTEC INC VTP8440 A0511
H0A0872-n55 Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1	OCR Scan	PDF	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
VTP8440 Abstract: VTP8441 H 8441 Text: _ SbE ]> 3 0 3 0 b 0 cì DOOlOai • 271 V T P 8 4 4 0 , 8441 VTP Process Photodiodes E «VCT G & G VACTEC T -4 1 -5 1 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 21 P la n a r s i l i c o n p h o t o d io d e in a recessed ce ram ic package. C h ip is	OCR Scan	PDF	VTP8440, T-41-51 8x1012 VTP8440 VTP8441 H 8441