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Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7840H PACKAGE DIMENSIONS inch mm CASE 51 LENSED SIDELOOKER CHIP ACTIVE AREA: .0082 in2 (5.27 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but
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VTP7840H
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VTP7840H
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7840H PACKAGE DIMENSIONS inch mm CASE 51 LENSED SIDELOOKER CHIP ACTIVE AREA: .0082 in2 (5.27 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but
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VTP7840H
VTP7840H
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Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7840 PACKAGE DIMENSIONS inch mm CASE 51 LENSED SIDELOOKER CHIP ACTIVE AREA: .0082 in2 (5.27 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but
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VTP7840
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VTP7840
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7840 PACKAGE DIMENSIONS inch mm CASE 51 LENSED SIDELOOKER CHIP ACTIVE AREA: .0082 in2 (5.27 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but
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VTP7840
VTP7840
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTP8651
Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).
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VTP100
VTP8651
VTP1112
VTP4085
VTP1188S
VTP11188S
VTP1232
silicon photodiode array
VTP1012
VTP7840
VTP100
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VTP1220FBH
Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0
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VTS3082H
VTS3085H
VTS3185H
VTS3082H
VTS3085H
VTS3185H
VTP1220FBH
VTS3082
VTB9412BH
VTB1013B
VTP1012H
VTB8441BH
VTD34H
VTP4085H
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Untitled
Abstract: No abstract text available
Text: VTP7840 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 51 Planar silicon photodiode in a transfer molded, large lensed sidelooker pack age. The dark package material filters out visible light but passes infrared. These diodes exhibit low dark current
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VTP7840
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VTP7840
Abstract: No abstract text available
Text: VTP7840 VTP Process Photodiodes P A C K A G E D IM E N S IO N S inch mm PR O D U C T D ESC R IP T IO N CASE 51 Planar silicon photodiode in a transfer molded, large lensed sidelooker pack age. The dark package material filters out visible light but passes infrared.
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VTP7840
IO-14
VTP7840
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