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    Excelitas Technologies Corporation VTP7210H

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    VTP7210 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTP7210 PerkinElmer Optoelectronics VTP Process Photodiode Original PDF
    VTP7210 EG&G Vactec VTP Process Photodiodes Scan PDF

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    VTP7210

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP7210 PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These


    Original
    PDF VTP7210 VTP7210

    VTP7210

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP7210 PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These


    Original
    PDF VTP7210 VTP7210

    VTP7210H

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP7210H PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These


    Original
    PDF VTP7210H VTP7210H

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP7210H PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These


    Original
    PDF VTP7210H

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original
    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTP8651

    Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
    Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).


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    PDF VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100

    Untitled

    Abstract: No abstract text available
    Text: VTP7210 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm .055 (1.40) •70 (17.5) .045 (1.14) .028 (0.71) MAX. .180 (4.57) T~ .170 (4.32) (2.54) ANODE .04 (1.02) NOM. .065 (1.65) ■235 (5.97) .225 (5.72) .055 (K40)' - . 1 6 5 (4.20) NOM. .022 (0.56) .030 (0.76) SR


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    PDF VTP7210

    S 76 infrared

    Abstract: VTP7210
    Text: VTP Process Photodiodes VTP7210 PACKAGE DIMENSIONS inch mm .70 (17.6) AN O D E .04 (1.02) NOM. - . 1 6 5 (4.20) NOM. .225 (5.72) .022 (0.56) .018 (0.46)' .030 (0.76) SR •038 (0.97) .033 r0.84l PRODUCT DESCRIPTION TZ GR AY COLOR CODE CASE 7 Small area planar silicon photodiode


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    PDF VTP7210 in210 VTP721 6313z 3030bQT S 76 infrared VTP7210