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Abstract: No abstract text available
Text: VTP Process Photodiodes VTP5050 PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a “flat” window, dual lead TO-5 package. Cathode is common to the
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Text: VTP Process Photodiodes VTP5050H PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a “flat” window, dual lead TO-5 package. Cathode is common to the
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VTP5050H
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Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP5050H PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a “flat” window, dual lead TO-5 package. Cathode is common to the
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VTP5050
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP5050 PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a “flat” window, dual lead TO-5 package. Cathode is common to the
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VTP5050
VTP5050
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTP8651
Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).
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VTP100
VTP8651
VTP1112
VTP4085
VTP1188S
VTP11188S
VTP1232
silicon photodiode array
VTP1012
VTP7840
VTP100
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k4070
Abstract: VTP5050 VTP5051
Text: sb E » • 3 0 3 qi ,c h a a o i a 7 b t o h » v c t VTP5050, 5051 VTP Process Photodiodes E 6 & G VACT EC T-41-51 PACKAGE DIMENSIONS inch mm f.0 0 (25.4) .182 (*.62) PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a "flat" window, dual lead TO-5 package.
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000107b
VTP5050,
T-41-51
VTP5050
VTP5051
0x1012
x1012
k4070
VTP5050
VTP5051
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VTP5050
Abstract: 0RVR k4070 F508
Text: VTP5050 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a “flat” window, dual lead TO-5 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP5050
IO-13
0D01SÃ
VTP5050
0RVR
k4070
F508
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Untitled
Abstract: No abstract text available
Text: VTP5050 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a “flat” window, dual lead TO-5 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP5050
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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k4070
Abstract: dual photodiode Vactec VTP5051 VTP5050
Text: SbE D BOBObOT GQ0107b TDM B V C T VTP Process Photodiodes E G & G V T P 5 0 5 0 , 5 05 1 VACTEC T -4 1-5 1 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a "flat" window, dual lead TO-5 package. Cathode is common to the case. These
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VTP5050,
T-41-51
VTP5050
VTP5051
0x1012
x1012
k4070
dual photodiode
Vactec
VTP5051
VTP5050
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