Untitled
Abstract: No abstract text available
Text: Alternate Source/ Second Source Photodiodes VTD31AAH CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of
|
Original
|
PDF
|
VTD31AAH
CLD31AA
|
VTD31AAH
Abstract: CLD31AA
Text: Alternate Source/ Second Source Photodiodes VTD31AAH CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of
|
Original
|
PDF
|
VTD31AAH
CLD31AA
VTD31AAH
|
ceramic photodiode case 13
Abstract: CLD31AA VTD31AA
Text: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of
|
Original
|
PDF
|
VTD31AA
CLD31AA
ceramic photodiode case 13
VTD31AA
|
S1723-04
Abstract: BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K
Text: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of
|
Original
|
PDF
|
VTD31AA
CLD31AA
S1723-04
BPW34 application
VTD34
BPW34
BPW34 application note
SFH206K
BPW34F
SFH205
VTD205
VTD205K
|
C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
|
Original
|
PDF
|
10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
|
Untitled
Abstract: No abstract text available
Text: VTD31AA Alternate Source/ Second Source Photodiodes ICLD31AA INDUSTRY EQUIVALENTI PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.
|
OCR Scan
|
PDF
|
VTD31AA
ICLD31AA
|
31AA
Abstract: CLD31 VTD31 VTD31AA Photodiode vactec
Text: Sb E D 3G30bD^ OODlin 02 T • ■p-41-S I VCT VTD31, VTD31AA VTP Process Photodiodes C L D 3 1 , 3 1 A A IN D U S T R Y E Q U IV A LE N T E G 8c 0 VACTEC PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2)
|
OCR Scan
|
PDF
|
3D30bD^
VTD31,
VTD31AA
CLD31,
Cto75Â
VTD31
31AA
CLD31
VTD31
VTD31AA
Photodiode vactec
|
EG*G Vactec
Abstract: VTD31AA Vactec Photodiode vactec
Text: VTD31AA Alternate Source/ Second Source Photodiodes CLD31AA IN D U STR Y EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and
|
OCR Scan
|
PDF
|
VTD31AA
CLD31AA
EG*G Vactec
VTD31AA
Vactec
Photodiode vactec
|
Untitled
Abstract: No abstract text available
Text: SbE D 3G3GtiDci D D D lin Ü2T • VCT VTD31, V T D 3 1 A A VTP Process Photodiodes CLD31, 31AA INDUSTRY EQUIVALENT E G & G VAC TE C PACKAGE D IM EN SIO N S inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) Planar silicon photodiode mounted on
|
OCR Scan
|
PDF
|
VTD31,
CLD31,
VTD31
VTD31AA
|
