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    Excelitas Technologies Corporation VTB6061JH

    Photo Diode; No. Of Pins:2Pins; Diode Case Style:To-8; Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:55°; Dark Current:2000Pa; Operating Temperature Min:-40°C; Operating Temperature Max:110°C; Product Range:- Rohs Compliant: Yes |Excelitas Tech VTB6061JH
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    VTB6061J Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VTB6061J PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB6061J EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB6061J EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB6061J EG&G Vactec VTB Process Photodiodes Scan PDF

    VTB6061J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VTB6061J

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to


    Original     		PDF VTB6061J VTB6061J

    VTB6061JH

    Abstract: D92-02
    Text: VTB Process Photodiodes VTB6061JH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to


    Original     		PDF VTB6061JH VTB6061JH D92-02

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to


    Original     		PDF VTB6061J

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB6061JH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to


    Original     		PDF VTB6061JH

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


    Original     		PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    Untitled

    Abstract: No abstract text available
    Text: VTB6061J VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2} Large area planar silicon photodiode in a "flat” window, three lead TO-8 pack­ age. Chip is isolated from case. The


    OCR Scan     		PDF VTB6061J VTBS061J

    VTB6060J

    Abstract: VTB6061J Vactec 6061J
    Text: SbE D • 3030bCH 0DÜ1 ÜM7 DD3 VTB Process Photodiodes E G & G IVCT VTB6060J, 6061J VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a 'flat" w indow , three lead T O -8 pack­


    OCR Scan     		PDF 3030bCH VTB6060J, 6061J T-41-51 VTB60oefficient 6x1012 x1013 VTB6060J VTB6061J Vactec 6061J

    VTB6061J

    Abstract: No abstract text available
    Text: VTB Process Photodiodes V T B 6 0 6 1J PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C A S E 15A Large area p la n a rsilico n photodiode in a "fla t’ w indow , three lead T O -8 pack­ age. C h ip is isolated from case. Th e third lead allow s ca se to be grounded.


    OCR Scan     		PDF VTB6061J VTB6061J

    VTB6060

    Abstract: 2X10 VTB6060J VTB6061J 6061J
    Text: SbE » • 3Q3DbDT 0001D147 0D3 VTB Process Photodiodes IVCT VTB6060J, 6061J E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a 'flat" window, three lead TO-8 pack­ age. Chip is isolated from case. The


    OCR Scan     		PDF 0001D147 VTB6060J, 6061J T-41-51 VTB6060J 1001c, x1013 VTB6060 2X10 VTB6060J VTB6061J 6061J