vlt 2900
Abstract: No abstract text available
Text: TECHNICAL INFORMATION SOFTWARE FOR CALCULATING POWER CAPABILITY FOR MLC CERAMIC CAPACITORS by John D. Prymak Olean Advanced Products Division AVX Corporation Abstract: The power capability of the ceramic MLC capacitor is a rather complex association of design, material, ambient temperature,
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infor80-539-1501
S-SCPC00M301-R
vlt 2900
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Delta dps 240 fp
Abstract: bosch lsh 24 bosch lsh 25 radix-2 dit fft flow chart VOGT n7 bosch lsh 6 radix-4 DIT FFT C code vogt p4 vogt N8 ga15 engine
Text: Parallel Processing With the TMS320C4x Application Guide 1994 Digital Signal Processing Products Printed in U.S.A., February 1994 SPRA031 Application Guide Parallel Processing With the TMS320C4x 1994 Parallel Processing With the TMS320C4x Application Guide
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TMS320C4x
SPRA031
Delta dps 240 fp
bosch lsh 24
bosch lsh 25
radix-2 dit fft flow chart
VOGT n7
bosch lsh 6
radix-4 DIT FFT C code
vogt p4
vogt N8
ga15 engine
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VC04LC18V500
Abstract: VC06LC18X500 VC08LC18A500
Text: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed
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200pF)
VC04LC18V500
VC040214X300
VC040209X200
VC040218X400
VC040205X150
VC04LC18V500
VC06LC18X500
VC08LC18A500
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Delta dps 240 fp
Abstract: R4000 T805 T9000 TMS320 TMS320C40 motorola analog ICs vol.1 bosch lsh 25 MOTOROLA Semiconductor Data Library Volume 3 1974 50MFlops
Text: Parallel Processing With the TMS320C4x Application Guide SPRA031 February 1994 Printed on Recycled Paper Part 1 Introduction to Parallel Processing Part 2 Hardware Applications Part 3 Software Algorithms Part 4 End Applications IMPORTANT NOTICE Texas Instruments Incorporated TI reserves the right to make changes to its products
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TMS320C4x
SPRA031
Delta dps 240 fp
R4000
T805
T9000
TMS320
TMS320C40
motorola analog ICs vol.1
bosch lsh 25
MOTOROLA Semiconductor Data Library Volume 3 1974
50MFlops
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bosch lsh 25
Abstract: bosch lsh 24 vogt N8 bosch lsh 6 VOGT N6 VOGT n7 VOGT P4 vogt P5 VOGT p9 vogt m3
Text: Parallel Processing With the TMS320C4x Application Guide SPRA031 February 1994 Printed on Recycled Paper Part 1 Introduction to Parallel Processing Part 2 Hardware Applications Part 3 Software Algorithms Part 4 End Applications IMPORTANT NOTICE Texas Instruments Incorporated TI reserves the right to make changes to its products
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TMS320C4x
SPRA031
bosch lsh 25
bosch lsh 24
vogt N8
bosch lsh 6
VOGT N6
VOGT n7
VOGT P4
vogt P5
VOGT p9
vogt m3
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bosch lsh 25
Abstract: bosch lsh 24 vogt N8 VOGT n7 VOGT p8 VMEbus interface handbook vogt m3 VOGT n3 Cypress VMEbus Interface Handbook VOGT N6
Text: Parallel Processing With the TMS320C4x Application Guide 1994 Digital Signal Processing Products Printed in U.S.A., February 1994 SPRA031 Parallel Processing With the TMS320C4x 1994 Application Guide Parallel Processing With the TMS320C4x Application Guide
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TMS320C4x
SPRA031
information120
bosch lsh 25
bosch lsh 24
vogt N8
VOGT n7
VOGT p8
VMEbus interface handbook
vogt m3
VOGT n3
Cypress VMEbus Interface Handbook
VOGT N6
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VC06LC18X500
Abstract: VC04LC18V500 VC08LC18A500
Text: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed
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200pF)
VC04LC18V500
VC040214X300
VC040209X200
VC040218X400
VC040205X150
VC06LC18X500
VC04LC18V500
VC08LC18A500
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Untitled
Abstract: No abstract text available
Text: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed
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200pF)
VC04LC18V500
VC06LC18X500
VC08LC18A500
VC12LC18A500
VA10LC18A500
VC04LC18V500
VC040218X400
VC040214X300
VC040209X200
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VC04LC18V500
Abstract: VC06LC18X500 VC08LC18A500
Text: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed
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Original
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200pF)
VC04LC18V500
VC040214X300
VC040209X200
VC040218X400
VC040205X150
VC04LC18V500
VC06LC18X500
VC08LC18A500
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PDF
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Untitled
Abstract: No abstract text available
Text: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed
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200pF)
VC04LC18V500
VC040214X300
VC040209X200
VC040218X400
VC040205X150
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5KE12A
Abstract: 5KE440CA
Text: 1.5KE6.8 -1.5KE440CA series 1.5KE6.8 - 1.5KE440CA 1500 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS Ø1.016±0.050 Protect sensitive electronics against voltage transients induced by electro-static discharge ESD , inductive load switching, and lightning. Ideal for the protection of
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5KE440CA
5KE440CA
5KE440A
5KE12A
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Untitled
Abstract: No abstract text available
Text: P6KE6.8 - P6KE440CA series P6KE6.8 - P6KE440CA 0.76 0.86 600 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS Protect sensitive electronics against voltage transients induced by electro-static discharge ESD , inductive load switching, and lightning. Ideal for the protection of I/O interfaces, Vcc bus, and
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P6KE440CA
P6KE440CA
X10-12
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15KE diode
Abstract: diode 1.5ke 100a
Text: Silicon Avalanche Diodes 1500 Watt Axial Transient Voltage Suppressors 1.5KE Series Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus, and other integrated circuits used in
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5KE200*
5KE200A*
5KE220
5KE220A
5KE250
5KE250A
5KE300
5KE300A
5KE350*
5KE350A*
15KE diode
diode 1.5ke 100a
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P6KE30A diode
Abstract: p6ke220ca P6KE36A diode E128 diode P6KE P6KE440C vs bi 187 P6KE10A P6KE11 P6KE12
Text: Silicon Avalanche Diodes 600 Watt Axial Transient Voltage Suppressors P6KE Series Protect sensitive electronics against voltage transients induced by 6 inductive load switching and lightning. Ideal for the protection SILICON DIODE ARRAYS of I/O interfaces, Vcc bus, and other integrated circuits.
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P6KE400CA
P6KE440
P6KE440C
P6KE440A
P6KE440CA
P6KE30A diode
p6ke220ca
P6KE36A diode
E128
diode P6KE
P6KE440C
vs bi 187
P6KE10A
P6KE11
P6KE12
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Diodes 600 Watt Axial Transient Voltage Suppressors P6KE Series Protect sensitive electronics against voltage transients induced by 6 inductive load switching and lightning. Ideal for the protection SILICON DIODE ARRAYS of I/O interfaces, Vcc bus, and other integrated circuits.
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AE 2576
Abstract: TMS320TCI648x 3GPP turbo decoder log-map C6416 0x00050005
Text: Application Report SPRAAG3 – December 2006 TMS320TCI648x TCP2 Channel Density Brighton Feng . ABSTRACT Turbo decoder lies at the heart of all of the third-generation 3G wireless standards.
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TMS320TCI648x
AE 2576
3GPP turbo decoder log-map
C6416
0x00050005
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IPC-2221A
Abstract: 12b3 diode IPC-2152 vsc8244hg TP168 3b6 it manufacture smd 1a5 smd 9A5 TP-114 nc02
Text: Freescale Semiconductor Application Note AN3444 Rev. 0, 10/2007 A Strategy for Routing the MPC8536E in a Six-Layer PCB by Michael George DSD Applications Freescale Semiconductor, Inc. Austin, Texas This application note is a design guide to assist the customer
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AN3444
MPC8536E
MPC8536E
IPC-2221A
12b3 diode
IPC-2152
vsc8244hg
TP168
3b6 it manufacture
smd 1a5
smd 9A5
TP-114
nc02
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MC1A01
Abstract: bridge rectifier j7 A190 A19013AH1AD1 A19015AH1AD1 A7012AH1AD1 A7014AH1AD1
Text: Silicon A70, A190 Rectifier Stacks FIN 13 FIN 14/15 643 A70, A190 1. R E C T I F I E R S T A C K S E L E C T IO N C H A R T fo r 40 C am bient, free convection cooling, resistive or inductive load for other conditions — see Figures 2 thru 7 . S IN G L E P H A SE H A L F W A V E
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A7012AH1AD1
A7011
A7013AH1
A7014AH1AD1
A19013AH1AD1
A19015AH1AD1
MC1A01
bridge rectifier j7
A190
A19015AH1AD1
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"Q-bit Corporation"
Abstract: H-8702
Text: Q BH -8702 Amplifier P erform ance Specifications Specifications T ypi ca l +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)
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E52-19422
H-8702
QBH-8702
"Q-bit Corporation"
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8706
Abstract: bh8706
Text: Q BH-8706 Amplifier P erform ance Specifications T ypi ca l +25 °C Specifications Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)
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BH-8706
E52-19422
QBH-8706
8706
bh8706
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Untitled
Abstract: No abstract text available
Text: Q B S -2 56 Amplifier P e rfo rm a n c e Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)
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diode 2000V EV2
Abstract: A35 diode bridge rectifier j7 peak 7x7x1.4 specs MC1A01 12 volt ac to dc bridge rectifier circuit A7012AH1AD1 A7014AH1AD1 ADC-318 A19013AH1AD1
Text: Medium & High Current Rectifier Modules A2011BC1AD1 i s a 200V, s in g le phase c e n te r ta p , using A20 c e l l s on type 11 F in s , capable o f conducting 6 .3 A a v e .p e r c e ll a t 1800 C conduction an gle in fre e a i r o r 9.8A per c e ll in 2000 lin e a r f e e t per minute fo rc e d a i r .
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A2011BC1AD1
diode 2000V EV2
A35 diode
bridge rectifier j7
peak 7x7x1.4 specs
MC1A01
12 volt ac to dc bridge rectifier circuit
A7012AH1AD1
A7014AH1AD1
ADC-318
A19013AH1AD1
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1.5SE18A
Abstract: 1.5SE200 1N5906 1.5SE39A 1.5SE36A 1N6201A 1.5SE16A 1.5SE15A 1.5SE200A 1.5SE160
Text: 1500 WATT TRANSIENT VOLTAGE 1.5 SE-SERIES SUPPRESSOR DIODES 5V to 342V VR _ C-4 CASE _ DESCRIPTION FEATURES: . a low cost commercial product lor use in applica tions where large voltage transients can permanently
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1x101
1.5SE18A
1.5SE200
1N5906
1.5SE39A
1.5SE36A
1N6201A
1.5SE16A
1.5SE15A
1.5SE200A
1.5SE160
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1.5SE250
Abstract: 1.5se20a 1.5SE6.8 1.5SE400A
Text: 1500 WATT TRANSIENT VOLTAGE 1.5 SE -SE R IE S SU P P R ESSO R DIODES 5V to 342V VR _ C -4 C A S E _ FEATURES: D ESC R IP T IO N . a low cost commercial product for use in applica tions where large voltage transients can permanently
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5SE350
5SE350A
5SE400
5SE400A
1N5908
1.5SE250
1.5se20a
1.5SE6.8
1.5SE400A
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