SBR130S3
Abstract: No abstract text available
Text: SBR130S3 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@1A, TJ=75oC TJ (operating/storage) Units 1.0 *
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SBR130S3
OD-323
OD-323
SBR130S3
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SBR120S3
Abstract: No abstract text available
Text: SBR120S3 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@1A, TJ=75oC TJ (operating/storage) Units 1.0 *
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SBR120S3
OD-323
OD-323
SBR120S3
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di sod323
Abstract: SBR0120S3 SBR0120S5 APD SEMICONDUCTOR
Text: SBR0120S3 SBR0120S5 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Characteristics Values IF AV Rectangular Waveform VRRM VF@0.1A, TJ=75oC TJ (operating/storage)
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SBR0120S3
SBR0120S5
OD-323,
OD-523
OD-323
OD-523
di sod323
SBR0120S3
SBR0120S5
APD SEMICONDUCTOR
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100C
Abstract: 125OC SBR60A45PT
Text: SBR60A45PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@30A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to
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SBR60A45PT
125OC
150OC
100C
125OC
SBR60A45PT
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100C
Abstract: 125OC SBR60A150PT
Text: SBR60A150PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@30A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to
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SBR60A150PT
125OC
175OC
100C
125OC
SBR60A150PT
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MGBR20L45C DIODE DUAL MOS GATED BARRIER RECTIFIERS DESCRIPTION The UTC MGBR20L45C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with high current capability, low forward voltage and high switching speed, etc.
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MGBR20L45C
MGBR20L45C
MGBR20L45CL-TA3-T
MGBR20L45CG-TA3-T
MGBR20L45CL-TF3-T
MGBR20L45CG-TF3-T
MGBR20L45CL-TN3-T
MGBR20L45CG-TN3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MGBR20S50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR20S50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.
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MGBR20S50C
MGBR20S50C
MGBR20S50CL-TA3-T
MGBR20S50CG-TA3-T
O-220
QW-R601-158
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MGBR10S50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR10S50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.
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MGBR10S50C
MGBR10S50C
MGBR10S50CL-TA3-T
MGBR10S50CG-TA3-T
MGBR10S50CL-TF3-T
MGBR10S50CG-TF3-T
O-220
O-220F
QW-R601-149
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MGBR10L50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR10L50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.
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MGBR10L50C
MGBR10L50C
MGBR10L50CL-TA3-T
MGBR10L50CG-TA3-T
MGBR10L50CL-TF3-T
MGBR10L50CG-TF3-T
O-220
O-220F
QW-R601-147
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MGBR10V60C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR10V60C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.
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MGBR10V60C
MGBR10V60C
MGBR10V60CL-TA3-T
MGBR10V60CG-TA3-T
MGBR10V60CL-TN3-T
MGBR10V60CG-TN3-T
MGBR10V60CL-TN3-R
MGBR10V60CG-TN3-R
O-220
O-252
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100C
Abstract: 125OC SBR40U45PT
Text: SBR40U45PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@20A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to
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SBR40U45PT
125OC
150OC
100C
125OC
SBR40U45PT
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125OC
Abstract: 175C SBR40100PT
Text: SBR40100PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@20A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to
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SBR40100PT
125OC
O-247
175OC
125OC
175C
SBR40100PT
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CMD44
Abstract: M51517 r305 finger print module BJT 3904 1510487 1SS355 ROHM smd code Z2p CMD62 RJ9 jack dimension CP10-VIA
Text: A B C D POWER ADAPTER 3V/5V/12V 4 CPU VIA C3 CPUCORE POWER PAGE 33 EBGA PAGE 3,4 PAGE 35 CHARGER BATTERY VTT 2.5V PAGE 36, 37 PAGE 34 PCI ID AD20 CARDBUS AD21 IEEE 1394 AD22 USB 2.0 AD24 LAN AD26 SOUTH BRIDGE AD18 PCI INT PCI REQ/GNT INTA#, INTD# REQ0#/GNT0#
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V/5V/12V
256MB
CN502
CP10-VIA
40-A05400-A000
CMD44
M51517
r305 finger print module
BJT 3904
1510487
1SS355 ROHM
smd code Z2p
CMD62
RJ9 jack dimension
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Untitled
Abstract: No abstract text available
Text: SBR20U60CT SBR20U60CTF SBR20U60CTI SBR20U60CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 20 A VRRM 60 V 0.45 -65 to 150 V, typ O C
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SBR20U60CT
SBR20U60CTF
SBR20U60CTI
SBR20U60CTB
150OC
O-220AB,
O-262,
O-263,
ITO-220
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SBR2050CT
Abstract: SBR2050CTF sbr2050 C2050 SBR2050CTB
Text: SBR2050CT SBR2050CTF SBR2050CTI SBR2050CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 20 A VRRM 50 V 0.49 -65 to 150 V, typ O C O VF@10A, Tj=125 C
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SBR2050CT
SBR2050CTF
SBR2050CTI
SBR2050CTB
150OC
O-220AB,
O-262,
O-263,
ITO-220
sbr2050
C2050
SBR2050CTB
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Untitled
Abstract: No abstract text available
Text: SBR60A150CT - Prel SBR60A150CTF - Prel SBR60A150CTI - Prel SBR60A150CTB - Prel Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 60 A VRRM
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SBR60A150CT
SBR60A150CTF
SBR60A150CTI
SBR60A150CTB
175OC
O-220AB,
O-262,
O-263,
ITO-220
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SBR20U100CTI
Abstract: SBR20U100CTF
Text: SBR20U100CT SBR20U100CTF SBR20U100CTI SBR20U100CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics Units IF AV Rectangular Waveform 20
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SBR20U100CT
SBR20U100CTF
SBR20U100CTI
SBR20U100CTB
175OC
O-220AB,
O-262,
O-263,
ITO-220
SBR20U100CTation,
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Untitled
Abstract: No abstract text available
Text: SBR30U100CT - Prel SBR30U100CTF - Prel SBR30U100CTI - Prel SBR30U100CTB - Prel Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 30 A VRRM
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SBR30U100CT
SBR30U100CTF
SBR30U100CTI
SBR30U100CTB
175OC
O-220AB,
O-262,
O-263,
ITO-220
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SBR10150CTI
Abstract: No abstract text available
Text: SBR10150CT - Prel SBR10150CTF - Prel SBR10150CTI - Prel SBR10150CTB - Prel Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 10 A VRRM 150
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SBR10150CT
SBR10150CTF
SBR10150CTI
SBR10150CTB
175OC
O-220AB,
O-262,
O-263,
ITO-220
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Untitled
Abstract: No abstract text available
Text: SBR60A45CT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@30A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to
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SBR60A45CT
125OC
O-220
150OC
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Untitled
Abstract: No abstract text available
Text: SBR10U100CT SBR10U100CTF SBR10U100CTI SBR10U100CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics Units IF AV Rectangular Waveform 10
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SBR10U100CT
SBR10U100CTF
SBR10U100CTI
SBR10U100CTB
175OC
O-220AB,
O-262,
O-263,
ITO-220
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SBR20A40CT
Abstract: No abstract text available
Text: SBR20A40CT SBR20A40CTF SBR20A40CTI SBR20A40CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 20 A VRRM 40 V 0.41 -65 to 150 V, typ O C
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SBR20A40CT
SBR20A40CTF
SBR20A40CTI
SBR20A40CTB
150OC
O-220AB,
O-262,
O-263,
ITO-220
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Untitled
Abstract: No abstract text available
Text: SBR20A250CT SBR20A250CTF SBR20A250CTI SBR20A250CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 20 A VRRM 250 V 0.67 -65 to 175 V, typ
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SBR20A250CT
SBR20A250CTF
SBR20A250CTI
SBR20A250CTB
175OC
O-220AB,
O-262,
O-263,
ITO-220
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SBR30U45CT
Abstract: No abstract text available
Text: SBR30U45CT SBR30U45CTF SBR30U45CTI SBR30U45CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 30 A VRRM 45 V 0.41 -65 to 150 V, typ O C
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SBR30U45CT
SBR30U45CTF
SBR30U45CTI
SBR30U45CTB
150OC
O-220AB,
O-262,
O-263,
ITO-220
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