induction cooker fault finding diagrams
Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
Text: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120
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03front
induction cooker fault finding diagrams
enamelled copper wire swg table
AC digital voltmeter using 7107
wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch
db 3202 diac
siemens mkl capacitor
YY63T
varta CR123A
HXD BUZZER
lt700 transformer
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VDR300
Abstract: K6711 VR10V241C 100n x2 Velleman K8046 Velleman 1n4148 LED3RL K8006 K8000
Text: Total solder points: 55 Difficulty level: beginner 1o 2þ 3o 4o 5oadvanced Relay output module for K8006 Features: K8027 þ For use with K8006 Base unit for home modular light system. þ Suited for both resistive and inductive loads. þ Can be operated from an external push button & open collector
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K8006
K8027
K8006
K6711
K8023
K8000
K8046
240Vac
50/60Hz)
75W/110V
VDR300
VR10V241C
100n x2
Velleman
K8046
Velleman 1n4148
LED3RL
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JVR 431 0.7
Abstract: 1N276 A145C thermal 141L t41l
Text: ● l_l r NCH-POUNO MIL-S-19500/192B 6 October 1989 141L-S-19500/192A 19 Aprfl 1968 MILITARY I SPECIFICATION SEMICONOUCTOR DEVICE, OIOOE, GERMANIUM, WITCHING TYPE 1N276, JAN, JANTX, AND JANTXV I This specification Agencies of the 1. is approved Department
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MIL-S-19500/192B
141L-S-19500/192A
1N276,
JVR 431 0.7
1N276
A145C
thermal 141L
t41l
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SK9860
Abstract: SK5036A SK9000 0/B60C 800 Si SK7183
Text: TH On S O N / DISTRIBUTOR 5flE D • ^031.073 aOÜMêflM 77b ■ TCSK GENERAL PURPOSE RECTIFIERS/DIODES Maximum Ratings Power Devices High Speed Devices ■ H Peak Reverse Current TCE Type SK3017B SK3031A SK3032A SK3033A SK3043B SK3051 SK3051P10 SK3080 SK3081
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SK3051P10
SK3080
SK3081
SK3081P100
SK3087
SK3088
SK3089
SK3090
SK3100
SK3100P10
SK9860
SK5036A
SK9000
0/B60C 800 Si
SK7183
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MTD7030
Abstract: MTE1050A MTE1100 T-W-53 diode tw
Text: HARKTECH INTERNATIONAL IflE D STTTiaSS Gcmoaìs ? PHOTO DIODE T - 41-S.3 MTD7030 SILICON PIN PHOTO DIODE CATHODE INDEX LK APPLICATIONS • REMOTE CONTROL SYSTEM • OPTICAL SWITCH SENSOR CENTER FEATURES 1. ANODE 2. CATHODE • High sensitivity: lsc=1-5i<A Typ.
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MTD7030
100ns
MTE1050A,
MTE1100.
T-41-S
MTD7030
MTE1050A
MTE1100
T-W-53
diode tw
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Untitled
Abstract: No abstract text available
Text: SA0YO Smal 1-Signal High-Voltage Schottky Barrier Diodes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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1SS345
1SS358
1SS35KCH)
1SS365
SS366
1SS375
MT950123TR
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Untitled
Abstract: No abstract text available
Text: SAflYO Schottky Barrier Diodes otc C o a x i a l Type F o r i- e c t i f 1e t-s A p p l icat i o n s ☆ Suited for high frequency rectifying circuits of switching regulators,converter and choppers. F e a t u r e s ☆ Very small forward voltage. ☆ Small switching noise.
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Ratings/Ta-25t:
VR-10V
SB10-03A2
SB10-03A3
SB10-04A3
SB11-04HP
SB16-04LHP
SB20-04A
SB30-04A
SB10-05A2
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"Smoke Sensor"
Abstract: TLN105B TLN115A TPS705 TPS706
Text: T O S H IB A TPS705JPS706 TPS705, TPS706 TOSHIBA PHOTO DIODE SILICON PIN Unit in mm SILICON PIN PHOTO DIODE FOR REMOTE CONTROL VARIOUS KINDS OF REMOTE CONTROL SYSTEMS 15 ± 0.25 SMOKE SENSOR 54.4±0.25 • Small package makes it possible to make a set thin.
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TPS705
TPS706
TPS705,
TPS705
100ns
TLN105B,
TLN115A,
"Smoke Sensor"
TLN105B
TLN115A
TPS706
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sb11-04
Abstract: No abstract text available
Text: SMYO Schottky Barrier Diodes C oa x i a 1 Type For r e c t if ie r s A p p l i c a t i o n s ☆ Suited for high frequency rectifying circuits of switching regulators, converter and choppers. F e a t u r e s ☆ Very small forward voltage. ☆ Small switching noise.
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VR-10V
SB10-03A2
SB10-03A3
SB10-04A3
SB11-04HP
SB16-04LHP
SB20-04A
SB30-04A
SB10-05A2
SB10-05A3
sb11-04
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MV1401
Abstract: MV1402 MV1403 MV1405 MV1406 MV1407 MV1408 MV1409
Text: M S I ELECTRONICS INC 3SE D E3 SbSbMbb QG0G3fl3 electronics m e The large capacitance tu n in g ratio in the hyperabrupts listed here make them suitable fo r broad band tu n in g applications. T heir large values of nom inal capacitance are fo r A M applications w ith th e lo w e r capacitance
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MV1401-MV1412
MV1401*
DO-14
MV1402
MV1403
MV1405
MV1406
MV1407
MV1408
MV1401
MV1409
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FU12AP
Abstract: M51000 Ge APD FU-12AP-N
Text: MITSUBISHI DISCRETE SC 0014631 TbE blE D in iT s FU-12AP-N, FU-32AP APD Module for Long Wavelength Band FU-12AP-N and FU-32AP are detector module containing highly reliable Ge APD (Avalanche photodiode) for long wavelength band (0.8—1.5 wm) and has high-speed response.
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FU-12AP-N,
FU-32AP
FU-12AP-N
FU-32AP
FU-12AP-N
24Rfl2R
FU12AP
M51000
Ge APD
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1ss37
Abstract: No abstract text available
Text: smm Small-Signal High-Voltage Schottky Barri r Di odes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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1SS345
1SS358
1SS350
1SS351
1SS355
1SS356
1SS375
VR-10V
7T03Q,
7T03C,
1ss37
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 234 S SILICON FOUR-QUADRANT PHOTODIODE Package Dimensions in Inches mm | |.141 (0.3)| A] Chip Location 012 (.3) max Common ~ . Cathode GrJd .018* 002 (0 45*0.05) 1 A Anode B - - 0 I g | .570* 039 (14.5*1.0)' .118±.008 I (3.0*0 2) .141 Anode \
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VR-10V,
SFH234S
3b32b
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fototransistor
Abstract: AFD3000 AFE2000 FPE100 fototransistor ir T0180 AFD1200 AFE5100
Text: ABORN ELECTRONICS S3E J> Special Devices OGTTblM DDDODSb bT^ H A B E -p¿S -07 FIBER OPTIC EMITTERS DESCRIPTION DEVICE units çonditlons WAVELENGTH POWER OUT FORWARD VOLTAGE nM Ip=50mA Volts Ip*50mA uW Ip=5QmA T i n r PACKAGE FACE TIME DRAWING numerical APERATURE
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0Q0005ki
If-50mA
IF-50niA
AFE2000
T0-18Window
AFE2100
T0-18Uindow
AFE3100
T0-18Plastic
AFE5100
fototransistor
AFD3000
FPE100
fototransistor ir
T0180
AFD1200
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