PNZ3108
Abstract: No abstract text available
Text: PIN Photodiodes PNZ3108 PIN Photodiode Unit : mm For optical control systems 1.8±0.3 0.8±0.2 0.6±0.1 5.0±0.1 2.54±0.1 4 3 1.0±0.1 Features High sensitivity and low dark current Good positional linearity Small plastic package 5˚ 13.5±1.0 4.0±0.1 1.0±0.3
|
Original
|
PNZ3108
PNZ3108
|
PDF
|
BPW97
Abstract: No abstract text available
Text: TELEFUNKEN Semiconductors BPW 97 Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve
|
Original
|
BPW97
D-74025
|
PDF
|
CD 8403
Abstract: S268P
Text: TELEFUNKEN Semiconductors S 268 P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides
|
Original
|
S268P
D-74025
CD 8403
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PIN Photodiodes PN3405 Quad. Division Silicon PIN Photodiode Unit : mm 1.8±0.3 For optical information systems 0.8±0.2 5.0±0.1 5 4 1.0±0.1 6 Features 5˚ Fast response : tr, tf = 20 ns typ. M Di ain sc te on na tin nc ue e/ d 13.5±1.0 4.0±0.1 1.0±0.3
|
Original
|
PN3405
|
PDF
|
BPW97
Abstract: REL 07 B1-1.0
Text: BPW97 Vishay Telefunken Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his
|
Original
|
BPW97
BPW97
D-74025
20-May-99
REL 07 B1-1.0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BPW97 Vishay Telefunken Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his
|
Original
|
BPW97
BPW97
D-74025
20-May-99
|
PDF
|
REL 07 B1-1.0
Abstract: BPW97
Text: BPW97 Vishay Semiconductors Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal,
|
Original
|
BPW97
BPW97
D-74025
20-May-99
REL 07 B1-1.0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PIN Photodiodes PNZ316K2 Hex. Division Silicon PIN Photodiode Unit : mm 8 7 6 5 8-0.5±0.1 8-0.6 +0.1 –0.2 10˚ Good photo current linearity 1.0 13.0±1.0 4.0±0.1 Features Fast response : tr = 3 ns typ. ø3.2,Dep.0.1 10˚ 5.0±0.1 For optical information systems
|
Original
|
PNZ316K2
|
PDF
|
VR301
Abstract: PNZ0303
Text: PIN Photodiodes PNZ0303 PIN Photodiode Unit : mm ø9.4 max. ø8.1±0.2 ø5.9±0.2 12.7 min. 3.5 max. For optical control systems Features Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns typ. High photodetection sensitivity and wide dynamic sensitivity
|
Original
|
PNZ0303
2856K
VR301
PNZ0303
|
PDF
|
vr 10 L 8 photo
Abstract: PNZ0335
Text: PIN Photodiodes PNZ0335 PIN Photodiode Unit : mm Features 4.5±0.15 3.5±0.15 3.9±0.25 Flat side-view type package Not soldered 0.8 max. 1.5±0.2 For optical fiber 2.95 High coupling capability suitable for plastic fiber 2.1±0.15 1.6±0.15 0.8±0.1 High quantum efficiency
|
Original
|
PNZ0335
vr 10 L 8 photo
PNZ0335
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PIN Photodiodes PNZ335 PIN Photodiode Unit : mm Features 4.5±0.15 3.5±0.15 3.9±0.25 Flat side-view type package Not soldered 0.8 max. 1.5±0.2 For optical fiber 2.95 High coupling capability suitable for plastic fiber 2.1±0.15 1.6±0.15 0.8±0.1 High quantum efficiency
|
Original
|
PNZ335
|
PDF
|
PNZ0334
Abstract: No abstract text available
Text: PIN Photodiodes PNZ0334 ø4.8±0.2 ø4.4±0.2 For optical fiber communication systems C0.2 5.0±0.2 3.0±0.3 Features 0.5 Plastic type package ø 5 0.8 High quantum efficiency High-speed response Unit : mm 0.6 26.0±0.1 1.5 1.5 High coupling capability suitable for plastic fiber
|
Original
|
PNZ0334
PNZ0334
|
PDF
|
REL 07 B1-1.0
Abstract: BPW97 81533
Text: BPW97 Vishay Telefunken Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his
|
Original
|
BPW97
BPW97
D-74025
20-May-99
REL 07 B1-1.0
81533
|
PDF
|
PNZ334
Abstract: No abstract text available
Text: PIN Photodiodes PNZ334 ø4.8±0.2 ø4.4±0.2 For optical fiber communication systems C0.2 5.0±0.2 3.0±0.3 Features 0.5 Plastic type package ø 5 0.8 High quantum efficiency High-speed response Unit : mm 0.6 26.0±0.1 1.5 1.5 High coupling capability suitable for plastic fiber
|
Original
|
PNZ334
PNZ334
|
PDF
|
|
|
BPW97
Abstract: No abstract text available
Text: BPW97 Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his system.
|
Original
|
BPW97
BPW97
55the
D-74025
15-Jul-96
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PIN Photodiodes PNZ3624 Hex. Division Silicon PIN Photodiode For optical information systems 5.0±0.1 8 Features 7 6 5 Low dark current : ID = 10 nA max. 1.0 8-0.5±0.1 8-0.6 +0.1 –0.2 High sensitivity, high reliability 10˚ Good photo current linearity
|
Original
|
PNZ3624
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PIN Photodiodes PNZ3108 PIN Photodiode Unit : mm For optical control systems 1.8±0.3 0.8±0.2 0.6±0.1 5.0±0.1 2.54±0.1 4 3 1.0±0.1 Features M Di ain sc te on na tin nc ue e/ d High sensitivity and low dark current Good positional linearity Small plastic package
|
Original
|
PNZ3108
|
PDF
|
S268P
Abstract: silicon photodiode array
Text: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.
|
Original
|
S268P
S268P
D-74025
20-May-99
silicon photodiode array
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ334 (PN334) Silicon planar type φ4.4±0.2 4.0±0.2 0.5 • Plastic type package (φ5) • High coupling capabillity suitable for plastic fiber • High quantum efficiency • High-speed response
|
Original
|
2002/95/EC)
PNZ334
PN334)
|
PDF
|
S268P
Abstract: No abstract text available
Text: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.
|
Original
|
S268P
S268P
D-74025
20-May-99
|
PDF
|
S1190 hamamatsu
Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
Text: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K
|
OCR Scan
|
42STbGT
S1188-02
S1188-06
S2216-01
S2216-02
S1190
S1190-01
S1190-03
S1190-04
S1223
S1190 hamamatsu
S2856
S2216 02
S2164-01
|
PDF
|
BPW89
Abstract: S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953
Text: TELEFUNKEN ELECTRONIC HME ]> B flTEODTb Ü G 1 1 1 7 Q 3 B I a I g G Photo Detectors I I Phototransistors in Clear Plastic Package Phototransistors w ith Filter M atched for GaAs IREDs in Plastic Package Package Type • Characteristics Photo sensitive area
|
OCR Scan
|
820nm
BPV11
850nm
BPW89
S284P
BPW21
BPW47B
BPW98
BPW84
S213P
BPW24R 810
W47A
A953
|
PDF
|
BPW84
Abstract: S288P BPW75 BPW87 BPW28 BPW86 LT 5239 H BPW47B BPW41N IR bpw77
Text: TEL E FU NK EN E L E C T R O N I C 4ME T> m ÛTEOCnti 0D1117D 3 D1ALGG Photo Detectors Phototransistors in Clear Plastic Package Phototransistors with Filter M atched for G a A s IR ED s in Plastic Package Package Type • C h a ra c te ristic s Photo sensitive
|
OCR Scan
|
BPV11
BPW96A
BPW96B
BPW96C
BPW85A
BPW85B
830nm
BPW84
S288P
BPW75
BPW87
BPW28
BPW86
LT 5239 H
BPW47B
BPW41N IR
bpw77
|
PDF
|
S1722-01
Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR
|
OCR Scan
|
S1721
S1722
S1722-01
S1722-02
S1863
S1863-01
S1723-04
S1723-08
S1723-06
S1723-05
S-1721
G1117
si7202
S2164-01
|
PDF
|
