vqe 23
Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
Text: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961
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VQE-11-021510/Mr.
Barone/614-692-0510)
MIL-PRF-19500N,
JANS1N829-1
vqe 23
WE VQE 23 E
VQE 23 E
ma 2830
MIL-PRF-19500N
1N829-1
1N821-1
VQE 11
VQE-11-021510
e422
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A0937
Abstract: 1N4532 at-614 1N3600 1N4148-1 JANTXV 1N4148UR-1 1N4148-1 1N4148-1 JAN 1N4531UR JANTX 1N4148-1
Text: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER DSCC-VQ VQE-1 o-019452/Mr. December 18, 2009 Deslich/614-692-0593/bpd TO SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961
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o-019452/Mr.
Deslich/614-692-0593/bpd)
MIL-PRF-19500N,
1N4148-1
A0937
1N4532
at-614
1N3600
1N4148-1 JANTXV
1N4148UR-1
1N4148-1 JAN
1N4531UR
JANTX 1N4148-1
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5842s
Abstract: 5841A
Text: ABSOLUTE MAXIMUM RATINGS at 25°C Free-Air Temperature Output Voltage, Vqe UCN5841A& A5841SLW . 50 V (UCN5842A & A5842SLW ). 80 V Output Voltage, V C e ( su s ) (UCN5841A & A5841SLW) . . . . 35 V f (UCN5842A & A5842SLW) . . . . 50 V f Logic Supply Voltage Range,
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UCN5841A
UCN5842A
5841/42A
5841/42S
A5841SLW
5842SLW
5842s
5841A
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C965 transistor
Abstract: transistor c965 transistor c964
Text: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses
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CPV362MK
360Vdc,
C-970
C965 transistor
transistor c965
transistor c964
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C311 Transistor
Abstract: TRANSISTOR C309 transistor c308 c309 transistor
Text: P D - 9.1072 bitemational jorJRectifier IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to
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10kHz)
IRGBC30M
C-311
TQ-220AB
C-312
C311 Transistor
TRANSISTOR C309
transistor c308
c309 transistor
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transistor c925
Abstract: smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925
Text: P D - 9.1142 bitemational [«»IRectifier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ie • Short circuit rated -1 Ops @125°C, VqE= 15V • Switching-loss rating includes all "tail" losses
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IRGBC30KD2-S
C-927
SMD-220
C-928
transistor c925
smd transistor c928
transistor c923
c927
diode c928
DIODE C921
transistor smd qe
c924
diode smd qe
C925
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LE C346
Abstract: No abstract text available
Text: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC30M-S
10kHz)
SMD-220
C-346
4flS54S2
002013b
LE C346
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2SA1298
Abstract: 2SC3265
Text: TO SH IBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS 2 .5 0.5 0.3 + - + High DC Current Gain : hjpg (1) —100~320 Low Saturation Voltage : Vqe (sa^) = 0.4 V (Max.)
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2SC3265
2SA1298
2SA1298
2SC3265
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Untitled
Abstract: No abstract text available
Text: MG25Q1BS11 T O SH IB A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT r<:i 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/iS Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode
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MG25Q1BS11
2-33D1A
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c879 transistor
Abstract: No abstract text available
Text: PD- 9.1075 International BagRectifier IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGPC30K
2Gb73
O-247AC
2Db74
c879 transistor
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Untitled
Abstract: No abstract text available
Text: MG25Q1BS11 T O SH IB A M G 2 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)
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MG25Q1BS11
2-33D1A
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Untitled
Abstract: No abstract text available
Text: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz
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IRGPC60M
10kHz)
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transistor TO-3P Outline Dimensions
Abstract: IRGPC60K
Text: PD - 9.1296 International i^ ] Rectifier IRGPC60K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Fea tu res • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGPC60K
Liguria49
transistor TO-3P Outline Dimensions
IRGPC60K
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c846 transistor
Abstract: c844 transistor C-844 C-843 transistor c848 C-844 power transistor c844 "Bipolar transistors"
Text: P D -9.1071 kitemational ËüRectifier IRGBC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ms @ 125°C, Vqe = 15V • Switching-loss rating includes ail "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K
TQ-220AB
C-848
c846 transistor
c844
transistor C-844
C-843
transistor c848
C-844
power transistor c844
"Bipolar transistors"
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c 2432
Abstract: D72F5T2 NPN
Text: D72F5T1, D72F5T2 File Number 2363 5-Ampere Silicon N-P-N Power Transistors T E R M IN A L D E S IG N AT IO N Features: Low Vqe sat m Fast switching speed • Complementary to D73F5T1,2 ■ The D72F5T1 and D72F5T2 silicon n-p-n power transistors are designed for high current switching applications. They
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D72F5T1,
D72F5T2
D73F5T1
D72F5T1
D72F5T2
O-251
O-252
-252AA
c 2432
D72F5T2 NPN
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C405 transistor
Abstract: mv C405 C404 Transistor mv c402 IGBT 500V 35A IRGPC50MD2
Text: International lü ] Rectifier PD - 9.1145A IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 0 jjs @125°C, Vqe = 15V Switching-loss rating includes all "tail” losses
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10kHz)
IRGPC50MD2
C-405
TQ-247AC
C-406
C405 transistor
mv C405
C404 Transistor
mv c402
IGBT 500V 35A
IRGPC50MD2
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marking r2k
Abstract: MMST8598 IC marking R2k marking A32 MMST2907 R2B Marking G5B 500ma 40v pnp
Text: Transistors/Surface Mounting Type • SST3 Package/PNP Type Application Pre Amp Part No. B V c e o V ; Ic (mA @lc & Vqe f r (MHz) Cob (pF) Marking BC807-25 45 500 160 400 1 00 m A /1V 150 6 G5B B11 BC857A 45 100 110 230 2 m A /'5 V 250 4.5 G3E A32 Min. ^FE
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BC807-25
BC857A
BC857B
BC858B
BCW29
BCW30
BCW61B
BCW61C
BCW68F
BCW68G
marking r2k
MMST8598
IC marking R2k
marking A32
MMST2907 R2B
Marking G5B
500ma 40v pnp
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Untitled
Abstract: No abstract text available
Text: MG25Q1BS11 T O SH IB A M G 2 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)
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MG25Q1BS11
2-33D1A
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2SA1313
Abstract: 2SC3325
Text: TO SHIBA 2SA1313 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 313 A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SW ITCHING APPLICATIONS • Excellent hEE Linearity : ^FE (2) —25 (Min.) at VqE = —6V, Iq = —400mA
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2SA1313
--400mA
--50V
2SC3325
2SA1313
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TRANSISTOR C307
Abstract: transistor c308
Text: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC30M
10kHz)
C-311
O-22QAB
C-312
0201G2
TRANSISTOR C307
transistor c308
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C1027
Abstract: transistor c1027 transistor c1026 c1027 transistor C1026 c1023 transistor C-1027 transistor c1027 same transistor C1023 c1026 transistor
Text: PD-9.1126A bitemational i ?]Rectifier IRGPH50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 1 0 js @ 125°C, V qe = 10V (5ps ® Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency (over 5kHz)
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IRGPH50K
C-1027
100CK
O-247AC
C-1028
C1027
transistor c1027
transistor c1026
c1027 transistor
C1026
c1023 transistor
C-1027
transistor c1027 same
transistor C1023
c1026 transistor
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2Sa1491 SANKEN
Abstract: No abstract text available
Text: POWER TRANSISTORS i iifi PNP POWER TRANSISTORS Absolute M axim um Ratings Type No. Electrical Characteristics at TA = 25°C Pc VcBO VcEO V ebo Ic 3 ICB0 I eso ^ [BP. CEO hFE VcE tat) <W) (V) (V) (V) (A) (A) Max @ VCB Max @ V fB Min @ lc Min @ lç @ Vqe Max. @ lc @ lB
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2Sa1491 SANKEN
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M607
Abstract: 6MBI50L-120
Text: /\°7 — y / W ^ / Power Devices 3 ft 1200 1200 volts class/High speed switching m £ V ces V ges Device type Ic Cont. Pc VCE sat (VQE-15V) (Min.) to (- ton Amps. ^sec. V o te Switching tíme (Max.) tf toff K ft Package Net mass Gram s Votts Volts Amps Watte
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2MBI25L-120
2MBI50L-120
2MBI75L-120
2MBI100L-120
2MBI150L-120
2MBI200L-120
1MBI200L-120
1MBI300L-120
1MBI400L-120
VQE-15V)
M607
6MBI50L-120
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 306D 1200V 23A !c Pin 3 E C Package
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O-218
67040-A4222-A2
GPT05156
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