VQE 13
Abstract: 1N6641 1N6642 JANTX 1N6638 1N6639 1N6640 1N6642 1N6643 JAN1N6642 Qualification
Text: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VQ VQE-09-017180/Mr. Carpenter/614-692-7078/kc SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961 January 13, 2009
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VQE-09-017180/Mr.
Carpenter/614-692-7078/kc)
MIL-PRF-19500N,
JAN1N6642
VQE 13
1N6641
1N6642 JANTX
1N6638
1N6639
1N6640
1N6642
1N6643
Qualification
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Untitled
Abstract: No abstract text available
Text: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V
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IRG4IBC20KD
25kHz
T0-220
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PSS320
Abstract: No abstract text available
Text: SIEMENS BUP 410 IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type V'CE h Package Ordering Code BUP 410 600V 13A TO-220 AB C67040-A4424-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage ^CE Collector-gate voltage ^CGR Rqe = 20 k£2
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O-220
C67040-A4424-A2
Jul-31ating
Jul-31
GPT05155
PSS320
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Untitled
Abstract: No abstract text available
Text: International ira] Rectifier Preliminary Data SheetPD - 9.760 IRGPH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency cun/e
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IRGPH50S
400Hz)
O-247AC
4fl55452
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Untitled
Abstract: No abstract text available
Text: PD -9.1064 bitemational ior Rectifier IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c e s = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGP440UD2
4ASS452
0G20437
O-247AC
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Untitled
Abstract: No abstract text available
Text: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses
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IRGPC50MD2
-10ps
10kHz)
C-405
O-247AC
C-406
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Untitled
Abstract: No abstract text available
Text: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,
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485S4S2
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Untitled
Abstract: No abstract text available
Text: PD -9.1656B International I R Rectifier IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power • • • • V ces = 6 0 0 V Supply and P F C power factor correction applications Industry-benchmark switching losses improve
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1656B
IRG4PC40W
554S2
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Untitled
Abstract: No abstract text available
Text: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC30U
100pical
5545E
O-247AC
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12n120
Abstract: TO247AE
Text: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage
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MGW12N
120/D
MGW12N120/D
12n120
TO247AE
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Untitled
Abstract: No abstract text available
Text: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve
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IRG4BC30W
0D2flb53
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Untitled
Abstract: No abstract text available
Text: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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PC30W
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Untitled
Abstract: No abstract text available
Text: International M Redifier pd9.i4ib IRGMH40F preliminary INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • • • • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz ~ 8 kHz
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IRGMH40F
44S54S2
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RG-910
Abstract: 2mb1100 2MBI100PC-140 ic l00a M233
Text: 2MBI100PC-140 IG B T M o d u le s IGBT Modules P s e rie s 1400V/100A 2 in one-package • Features • Small temperature dependence of the turn-off switching loss • Easy to connect in parallel •W ide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability
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2MBI100PC-140
400V/100A
ic150
ES16V.
TjSl25
RG-910
2mb1100
2MBI100PC-140
ic l00a
M233
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Untitled
Abstract: No abstract text available
Text: International P D - 9.1031 ¡ragRectifier IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Sw itching-loss rating includes all "tail" lo sses • Optimized for high operating frequency over 5kHz S e e Fig. 1 for Current vs. Frequency curve
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IRGPC20U
O-247AC
00504b4
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Untitled
Abstract: No abstract text available
Text: PD -5.05 5 In te rn a tio n a l K SR Rectifier PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-Fast Speed IGBT Features • Generation 4 IG B T technology V c E S = 600 V • UltraFast: Optim ized for high operating frequencies 8 -4 0 kH z in hard switching, >200
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GA100TS60U
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Untitled
Abstract: No abstract text available
Text: International içrç]Rectifier Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz V C ES = 1200V
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IRGPH30S
400Hz)
O-247AC
MA55MS2
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Untitled
Abstract: No abstract text available
Text: PD - 9.1657A International I R Rectifier IRG4 PC50W PRELIMINARY INSULATED GATE BIPOLARTRANSISTOR Features • Designed expressly for Switch-Mode Power V qes — 6 0 0 V Supply and P F C pow er factor correction applications • Industry-benchmark switching losses improve
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PC50W
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Untitled
Abstract: No abstract text available
Text: PD - 9.1576 International IOR Rectifier IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, ts C = 1 0 |J S , Vcc = 720V , T j = 125°C, V q e = 15V • Combines low conduction losses with high
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IRG4PH50K
t141b
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Untitled
Abstract: No abstract text available
Text: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a
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CA3146,
CA3146A,
CA3183,
CA3183A
CA3183
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier pd-o.usqa IRG4BC30F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT F eatures • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC30F
T0220AB
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C943 transistor
Abstract: DI 944 c939 transistor transistor c939 transistor C938
Text: P D - 9.1081 International ^R ectifier IRGPC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 600V • Short circuit rated -1 Ops @ 12 5 °C , V GE= 15V • Switching-loss rating includes all "tail" losses
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IRGPC30KD2
O-247AC
C-944
C943 transistor
DI 944
c939 transistor
transistor c939
transistor C938
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Untitled
Abstract: No abstract text available
Text: MG100Q2YS42 Unit in inm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.5//s Max. trr = 0.5//s(Max.) Low Saturation Voltage : VcE(sat) = 4-0V (Max-) Enhancement-Mode Includes a Complete Half Bridge in One
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MG100Q2YS42
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skiip 11 nec 06 1
Abstract: skiip 13 nec 06 3
Text: s e MIKRO n SKiiP 11 NEC 06 - SKiiP 11 NEC 06 I Absolute Maximum Ratings S ym bol C ond itions 1 Values Units Theatsink ~ 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms, Theatsink “ 25 / 80 °C 600 ±20 1 4 /1 0 2 8 /2 0
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DQ432C
A13bb71
11NC0603
11NC0604
11NC0605
skiip 11 nec 06 1
skiip 13 nec 06 3
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