IRC 265
Abstract: DP63950 DP83950BVQB DP83950BVQB-MPC MNDP83950B-VQB T101 T102 T103 T104 T105
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/24/94 Last Update Date: 02/24/99 Last Major Revision Date: 10/24/94 MNDP83950B-VQB REV 0B0 REPEATER INTERFACE CONTROLLER General Description The "RIC" may be used to implement an IEEE 802.3 multiport repeater unit including the
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MNDP83950B-VQB
VUL160ARB
28x28x3
160LD
M0003282
MNDP83950B-VQB,
IRC 265
DP63950
DP83950BVQB
DP83950BVQB-MPC
T101
T102
T103
T104
T105
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Untitled
Abstract: No abstract text available
Text: DLI 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE Multiple Level Sensor Multiple Level Sensor Multiple Level Sensor & Ground Multiple Level Sensor & Ground Dual Level & Ground 1595950000 1565970000 1578550000 1578560000 1578530000 1578540000 1578570000
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wiring VDG 13 relay
Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere20
MC33121/D*
wiring VDG 13 relay
Battery Managements
wiring VDG 14 relay
CI 3060 elsys
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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wiring VDG 13 relay
Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere12
wiring VDG 13 relay
Battery Managements
long range gold detector circuit diagram
PIN CONFIGURATION IC RT 3060
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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TAG 600
Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect
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VQB 28 E
Abstract: vqb 27 VQB28 Siebensegmentanzeige VQb 28 VQB 18 VQB16 vqb 27 f VQB27 VQB18
Text: FUNKAMATEUR-Bauelementeinformation Einstellige Lichtschachtbauelemente rot- bzw. grünstrahlend, Ziffernhöhe 19,6 mm, mit Diodenchips auf GaA/As- bzw. GaP-Basis VQB16/17/18 VQB 26/27/28 T G L 55111 Hersteller: V E B W erk für Fernsehelektronik Berlin Kurzcharakteristik
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VQB16/17/18
VQB 28 E
vqb 27
VQB28
Siebensegmentanzeige
VQb 28
VQB 18
VQB16
vqb 27 f
VQB27
VQB18
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VQB 24 E
Abstract: VQB 28 E VQb 28 0485400000 vqb 15
Text: D LI 2 .5 LD P N P D L I 2 .5 LD N P N D L A 2 .5 D LA 2 .5 D D L D 2 .5 PE j ß o-#o 0 — 4, o-H ZH Multiple Level Sensor C_> o— •—o k" o -*Q — ' °¿ r° T_r Multiple Level Sensor -,_ r C -j Multiple Level Sensor & Ground C_J T_r Multiple Level Sensor
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hp 2212
Abstract: 1783550000
Text: D U 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE °¿F ° o-*o 0 - 9— O o-»CH ° “ L ° ~ l Part No. M ultiple Level Sensor & Ground Part No. Dual Level & Ground Part No. Part No. 1783560000 1783790000 1783980000 1783950000 1783600000 1783970000
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diode 1n4007
Abstract: VQB 28 E vqb 15 0485400000 Diode -1N4007 diode,1N4007 diode 1N4007 terminal Diode 1N4007 vh
Text: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly w ell-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring pow er to the
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Wh6900000
diode 1n4007
VQB 28 E
vqb 15
0485400000
Diode -1N4007
diode,1N4007
diode 1N4007 terminal
Diode 1N4007 vh
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diode 1n4007
Abstract: diode,1N4007 diode 1N4007 terminal Diode -1N4007 DLD 2.5 Diode Marking 1N4007 1317660000 of 1n4007
Text: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly well-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring power to the
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VQB 28 E
Abstract: 1615280000
Text: Feed Through Terminals VLI 1.5 PE VLI 1.5 •M 't& fr ^ ' ■J\ ^ 'i _ MAK 2.5 J - c>-2 d o - o o ° - o M ultiple Level Sensor M ultiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Version 1_r
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6/88RT
VQB 28 E
1615280000
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LL250
Abstract: No abstract text available
Text: Feed Through Terminals VLI 1.5 V LI 1.5 PE M A K 2 .5 jm t W r ip s Ä 0 — — —0 o -o — °~^r -O Multiple Level Sensor Multiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Available Options Dimensions
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0520000000End
LL250
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btsg
Abstract: No abstract text available
Text: BtSgSi DMCA1 DIE N-Channel Lateral DMOS Quad FETs The Sillconlx DMCA1 Die is a monolithic array of single-pole, single-throw analog switches designed for high-speed switching in audio, video and high-frequency applications in communications, instrumentation, and process control. Designed on the
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SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
btsg
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CT1012
Abstract: Sd80-02 TIC 107
Text: SD5000, SD5001, SD5002 Universal Semiconductor N -C hannel E nhancem ent Mode Quad D-Mos F E T A nalog S w itch A rra y s O rdering Inform ation Description 20V , 500 10V, 500 15V, 50 0 16-Pin Plastic DIP 16-Pin Cerdip Gold-Backed Chips in Waffle Pack SD5000N
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SD5000,
SD5001,
SD5002
16-Pin
SD5000N
SD5000J
SD5000CHP
SD5001N
SD5001J
CT1012
Sd80-02
TIC 107
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MP310
Abstract: MP318 mp311 MP313 MP312 UP312A "micro power systems" log conformance dual npn
Text: M 20E D • bQTTMMM./OQOaaöQ M I C R O POWER "SYST EMS I N C P311 MICRO POWER SYSTEMS MP312 MP313 MP318 NPN DUAL MONOLITHIC SILICON NITROX* TRANSISTORS MONOLITHIC MATCHED PAIRS FOR DIFFERENTIAL AMPLIFIERS HIGH G A IN . LOG CONFORMANCE MP318 Are < In from ideal TYP.
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MP312
MP313
MP318
MP318
100/jA
MP310
MP311
MP312A
UP312A
"micro power systems"
log conformance dual npn
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70296
Abstract: No abstract text available
Text: SD5000I-2 Vishay Siliconix N-Channel Lateral DMOS FET Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY V (B R )D S M i n ( V ) VGS<th)Max(V) 20 1.5 r D S (o n) Max ( Q ) Cres Max (pF) t0NMax (ns) 0.5 2 70 @ V GS = 5 V FEATURES BENEFITS • Q uad S P S T Switch with Ze n e r Input Protection
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SD5000I-2
S-02889--
21-Dec
S-02889--Rev.
21-Dec-00
70296
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SD 214DE siliconix
Abstract: SILICONIX SD21
Text: Tem ic SD210DE/214DE Semiconductors N-Channel Lateral DMOS FETs Product Summary P a rt N um ber V BR DS M in (V) V GS (th )M a x (V ) rDS(on) M a x (Q ) Crss M a x (p F ) to N M a x (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 4 5 @ V Cs = 10V
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SD210DE/214DE
SD210DE
SD214DE
S-51850--Rev.
14-Apr-97
D224T2
SD 214DE siliconix
SILICONIX SD21
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TL 431 SO8
Abstract: 2SD203 SD203DC P3NF
Text: m SâE D TELEDYNE COMPONENTS ÖTlTbGd Ü0ûti37â &_m SD200, SD201 SD202, SD203 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE LATERAL D-MOS FETs ORDERING INFORMATION SD203DC SD202DC SD200DC SD2Q1DC T O -5 2 ,4 Lead Ptcg. SD200DC/R SD201DC/R SD202DC/R SD203DC/R
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SD200,
SD201
SD202,
SD203
SD203DC
SD202DC
SD200DC
SD200DC/R
SD201DC/R
SD202DC/R
TL 431 SO8
2SD203
P3NF
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vqb 71
Abstract: 074I sem 304 SD50G1
Text: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package
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SD5000CHP
SD5000J
SD500QN
SD5000,
SD5001,
SD5002
SD50CHCHP
SD5001J
SD5002CH«
SD5Q02M
vqb 71
074I
sem 304
SD50G1
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motorola TE 901
Abstract: MK1V135 2N390S MC14404
Text: bbE D MOTOROLA I b3b?s s3 ooaaa'ifl Mai « d o t s MOTOROLA SC TELECOM SEMICONDUCTOR TECHNICAL DATA MC3419-1L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . designed as the heart o f a c ircu it to p rovide B O R SH Tfunctions fo r telephone service in Central O ffice, PABX, and S ubscriber Car
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MC3419-1L
mF/20V
aiF/40
iF/60
MJE271
MJE270
MPSA56
2N3905
1N4007
motorola TE 901
MK1V135
2N390S
MC14404
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AF109
Abstract: AF109R Q60106-X109-R1 small signal germanium transistor AF 109 R
Text: 2SC D • ÛSBSbOS QQ04Q53 □ « S I E G AF109 R PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF 04053 D " T 2- 3 for AGC input stages up to 260 MHz / ^ 7 A F 109 R is a germanium PNP RF m esa transistor in TO 7 2 ca se 18 A 4 DIN 4 18 76 . T he terminals are electrically insulated from the case.
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AF109
Q60106-X109-R1
AF109R
Q60106-X109-R1
small signal germanium transistor
AF 109 R
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High-Speed Analog N-Channel DMOS FETs -TO-72
Abstract: sd5000 sd5000 series 51850
Text: T em ic SD5000/5400 Series Semiconductors N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary P a rt N um ber V BR DS M in (V ) VGS(th) M a x (V) rDscon) M a x (Q ) Crss M a x (p F ) tON M a x (ns) SD5000I 20 1.5 70 @ VGs = 5 V
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
High-Speed Analog N-Channel DMOS FETs -TO-72
sd5000
sd5000 series
51850
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D147D
Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Text: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC
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C520D
D147D
C520D
vqb 71
VQB71
D347D
d348d
VQE23
D346D
Halbleiterbauelemente DDR
VQE24
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