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    VQB 17 Search Results

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    VQB 17 Price and Stock

    VORAGO Technologies VA41630-CQ176FVQBA

    ARM Microcontrollers - MCU VA41630 - ARM Cortex M4 MCU - Rad. Hardened - 256KB NVM - 176 Ceramic QFP - Mil-PRF-38535 Class V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VA41630-CQ176FVQBA
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    • 10 $14742.84
    • 100 $14742.84
    • 1000 $14742.84
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    VQB 17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRC 265

    Abstract: DP63950 DP83950BVQB DP83950BVQB-MPC MNDP83950B-VQB T101 T102 T103 T104 T105
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/24/94 Last Update Date: 02/24/99 Last Major Revision Date: 10/24/94 MNDP83950B-VQB REV 0B0 REPEATER INTERFACE CONTROLLER General Description The "RIC" may be used to implement an IEEE 802.3 multiport repeater unit including the


    Original     		PDF MNDP83950B-VQB VUL160ARB 28x28x3 160LD M0003282 MNDP83950B-VQB, IRC 265 DP63950 DP83950BVQB DP83950BVQB-MPC T101 T102 T103 T104 T105

    wiring VDG 13 relay

    Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
    Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738


    Original     		PDF MC33121/D MC33121 MC33121 refere20 MC33121/D* wiring VDG 13 relay Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121FN MC33121P

    wiring VDG 13 relay

    Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
    Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface


    Original     		PDF MC33120/D MC33120 MC33120 wiring VDG 13 relay TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN

    wiring VDG 13 relay

    Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
    Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738


    Original     		PDF MC33121/D MC33121 MC33121 refere12 wiring VDG 13 relay Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121FN MC33121P

    TAG 600

    Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
    Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect


    Original     		PDF

    vqb 201

    Abstract: VQB201 VQB 28 E vqb 27 vqb 200 FUNKAMATEUR-Bauelementeinformation VQB200 Funkamateur ma702 vqb 200 d
    Text: FUNKAMATEUR-Bauelementeinformation VQB 200 VQB 201 Einstellige Lichtschachtbauelemente grünstrahlend, Zeichenhöhe 12,7 mm, 16 Segmente und Dezimalpunkt, mit Diodenchips auf GaP-Basis Hersteller: VEB Werk für Fernsehelektronik Berlin TGL 42170 Kurzcharakteristik


    OCR Scan     		PDF

    VQB 28 E

    Abstract: vqb 27 VQB28 Siebensegmentanzeige VQb 28 VQB 18 VQB16 vqb 27 f VQB27 VQB18
    Text: FUNKAMATEUR-Bauelementeinformation Einstellige Lichtschachtbauelemente rot- bzw. grünstrahlend, Ziffernhöhe 19,6 mm, mit Diodenchips auf GaA/As- bzw. GaP-Basis VQB16/17/18 VQB 26/27/28 T G L 55111 Hersteller: V E B W erk für Fernsehelektronik Berlin Kurzcharakteristik


    OCR Scan     		PDF VQB16/17/18 VQB 28 E vqb 27 VQB28 Siebensegmentanzeige VQb 28 VQB 18 VQB16 vqb 27 f VQB27 VQB18

    NPN MATCHED PAIRS

    Abstract: NPN pnp MATCHED PAIRS 5121 M DI4044 DI-2060
    Text: HIGH GAIN - SMALL SIGNAL - NPN - MATCHED PAIRS mV Max. •>FEl/l<FE2 Diff. @ lc“ 10 /iA I e“ 0 V ebo Volts Min. @ I e*“ 1 0 / xA lc=0 @ 60 7 Dl 4100 4879 5.0 0.85 to 1.0 55 55 7 By Dl 4045 4880 5.0 0.8 to 1.0 45 45 7 0.1 @ Vqb = 30 Its Dl 4045-1 10.0


    OCR Scan     		PDF DI-2060 100/xA Ie-10/xA 100pA Ie-10/Ã 500mA NPN MATCHED PAIRS NPN pnp MATCHED PAIRS 5121 M DI4044 DI-2060

    hp 2212

    Abstract: 1783550000
    Text: D U 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE °¿F ° o-*o 0 - 9— O o-»CH ° “ L ° ~ l Part No. M ultiple Level Sensor & Ground Part No. Dual Level & Ground Part No. Part No. 1783560000 1783790000 1783980000 1783950000 1783600000 1783970000


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    bvoe

    Abstract: TSC* 7 VQB 28 E
    Text: TELEDYNE COMPONENTS 3bE D ITSC 3^171,02 QGG7Ô14 7 WTELEDYNE COMPONENTS SD5400 SD5401 SD5402 QUAD DMOS FET ANALOG SWITCH ARRAYS FEATURES APPLICATIONS • ■ ■ ■ ■ ■ Low Interelectrode Capacitances — Analog Input.3.5 pF Typ


    OCR Scan     		PDF SD5400 SD5401 SD5402 107dB@ SD5400. SD5401 4-250C bvoe TSC* 7 VQB 28 E

    diode 1n4007

    Abstract: VQB 28 E vqb 15 0485400000 Diode -1N4007 diode,1N4007 diode 1N4007 terminal Diode 1N4007 vh
    Text: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly w ell-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring pow er to the


    OCR Scan     		PDF Wh6900000 diode 1n4007 VQB 28 E vqb 15 0485400000 Diode -1N4007 diode,1N4007 diode 1N4007 terminal Diode 1N4007 vh

    Untitled

    Abstract: No abstract text available
    Text: WTELEDYNE COMPONENTS SD211A SD215A N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ ■ ■ Parameter V ds V sd Vdb Vsb V gs High Input to Output Isolation— 120dB typical Low feedthrough and feedback transients Low inter-electrode Capacitances


    OCR Scan     		PDF SD211A SD215A 120dB SD215A

    Untitled

    Abstract: No abstract text available
    Text: fai' • »E I 83t8L05 000 153 1 q I SOLITRON DEVICES INC : S D F W O , S D F R 3 .I Ij S D R Ä I Ä S D R a ß ^ S D F S a iH ,5 'D R a iS " N-CHANNÊL ENHANCEMENT-MODE D-MOS FET SWITCHES FEATURES APPLICATIONS ■ High Input to Output isolation— 120dB typical


    OCR Scan     		PDF 83t8L05 120dB

    LL250

    Abstract: No abstract text available
    Text: Feed Through Terminals VLI 1.5 V LI 1.5 PE M A K 2 .5 jm t W r ip s Ä 0 — — —0 o -o — °~^r -O Multiple Level Sensor Multiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Available Options Dimensions


    OCR Scan     		PDF 0520000000End LL250

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E


    OCR Scan     		PDF Q62702-Z2035 OT-223 Jan-21-1999 100MHz

    2N2925

    Abstract: 2n2924 2N2923 "to-98" package PT 1132
    Text: SOLI» STATE 3875081 G E SOLID STATE Öl » F | 3 ö 7 S 0 a i 0017^07 01E 17907 D Signal Transls{ors" 2N2923, 2N2924, 2N2925 Silicon Transistors TO-98 The GE/RCA 2N 2923,2N 2924, and 2N2925 types are planar


    OCR Scan     		PDF 2N2923, 2N2924, 2N2925 2N2923 2N2925 2N2923 2N2924 2n2924 "to-98" package PT 1132

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Top View Morking on SOI-db.} pockooe (for example W1s corresponds to pin I ol device Direction of Unreeling


    OCR Scan     		PDF BFS17S Q62702-F1645 OT-363 B235b05 235b05 012215t. G125157

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 00245=17 b51 « A P X N APIER PHILIPS/DISCRETE BCX17 BCX18 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope, intended fo r application in thick and thin-film circuits. These transistors are intended for general purposes as well as saturated switching and driver applications


    OCR Scan     		PDF BCX17 BCX18 OT-23 BCX19 BCX20 G024bDD

    Untitled

    Abstract: No abstract text available
    Text: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Symbol Collector Emitter Voltage : BD533


    OCR Scan     		PDF BD533/535/537_ BD534, BD536 BD538 BD533 BD535 BD537

    MP310

    Abstract: MP318 mp311 MP313 MP312 UP312A "micro power systems" log conformance dual npn
    Text: M 20E D • bQTTMMM./OQOaaöQ M I C R O POWER "SYST EMS I N C P311 MICRO POWER SYSTEMS MP312 MP313 MP318 NPN DUAL MONOLITHIC SILICON NITROX* TRANSISTORS MONOLITHIC MATCHED PAIRS FOR DIFFERENTIAL AMPLIFIERS HIGH G A IN . LOG CONFORMANCE MP318 Are < In from ideal TYP.


    OCR Scan     		PDF MP312 MP313 MP318 MP318 100/jA MP310 MP311 MP312A UP312A "micro power systems" log conformance dual npn

    2n6191

    Abstract: No abstract text available
    Text: — — U L Ü U M IJ U »„ I . J . l l - L l J i . l_ ü - l lL J . . W W B B g . N _ M M _ _ .L _ ,_ _ l_ L _ l_ l , SOLID STATE DEVICES INC _ . il l , _l _ _ _ > 12E D 1831.1=011 OOGaiSM 0 | r - 3 3 - 17 2N6192 AND 2N6193 5 AMP HIGH SPEED PNP TRANSISTOR


    OCR Scan     		PDF 2N6192 2N6193 2N5338 2N5339 2N6190 2N6191

    SD215

    Abstract: SD213DE SD211 SD215DE SD211DE SD213 XSD211 XSD213 XSD215 TO72 package
    Text: High-Speed Analog N-Channel DMOS FETs calocft CORPORATION o SD211/SD213/SD215 DESCRIPTION The Calogic SD211 is a 30V analog switch driver with a builtin protection diode from gate to substrate. The SD211 is used with SD213 and SD215 DMOS analog switches. FEATURES


    OCR Scan     		PDF SD211/SD213/SD215 120dB SD211: SD213 SD215: SD211 443P2 1AH435S SD215 SD213DE SD215DE SD211DE XSD211 XSD213 XSD215 TO72 package

    TL 431 SO8

    Abstract: 2SD203 SD203DC P3NF
    Text: m SâE D TELEDYNE COMPONENTS ÖTlTbGd Ü0ûti37â &_m SD200, SD201 SD202, SD203 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE LATERAL D-MOS FETs ORDERING INFORMATION SD203DC SD202DC SD200DC SD2Q1DC T O -5 2 ,4 Lead Ptcg. SD200DC/R SD201DC/R SD202DC/R SD203DC/R


    OCR Scan     		PDF SD200, SD201 SD202, SD203 SD203DC SD202DC SD200DC SD200DC/R SD201DC/R SD202DC/R TL 431 SO8 2SD203 P3NF

    vqb 71

    Abstract: 074I sem 304 SD50G1
    Text: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package


    OCR Scan     		PDF SD5000CHP SD5000J SD500QN SD5000, SD5001, SD5002 SD50CHCHP SD5001J SD5002CH« SD5Q02M vqb 71 074I sem 304 SD50G1